公开(公告)号：US20190057862A1

公开(公告)日：2019-02-21

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Eswaranand VENKATASUBRAMANIAN ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/52

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20180218902A1

公开(公告)日：2018-08-02

申请号：US15882204

申请日：2018-01-29

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Abhijit Basu MALLICK ,  Susmit Singha ROY ,  Takehito KOSHIZAWA

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/32 ,  C23C16/34 ,  C23C16/50

CPC classification number: H01L21/0332 ,  C23C16/0272 ,  C23C16/32 ,  C23C16/342 ,  C23C16/345 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises forming a seed layer on a substrate by supplying a seed layer gas mixture in a processing chamber. The method further includes forming a transition layer comprising tungsten, boron and carbon on the seed layer by supplying a transition layer gas mixture in the processing chamber. The method further includes forming a bulk hardmask layer comprising tungsten, boron and carbon on the transition layer by supplying a main deposition gas mixture in the processing chamber.

公开(公告)号：US20250046611A1

公开(公告)日：2025-02-06

申请号：US18364507

申请日：2023-08-03

Applicant: Applied Materials, Inc.

Inventor： Jialiang WANG ,  Soonil LEE ,  Eswaranand VENKATASUBRAMANIAN ,  Abhijit B. MALLICK

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/509 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

Abstract: The present disclosure provides method of processing a substrate. The method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. A plasma is generated at the substrate by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film is doped film with a hydrogen dopant to form a doped diamond-like carbon film. The hydrogen dopant is thermally annealing to the doped diamond-like carbon film.

公开(公告)号：US20230021761A1

公开(公告)日：2023-01-26

申请号：US17961224

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20210005500A1

公开(公告)日：2021-01-07

申请号：US16913969

申请日：2020-06-26

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Edward L. HAYWOOD ,  Samuel E. GOTTHEIM ,  Pramit MANNA ,  Kien N. CHUC ,  Adam FISCHBACH ,  Abhijit B. MALLICK ,  Timothy J. FRANKLIN

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  H01L21/3213

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.

公开(公告)号：US20190393034A1

公开(公告)日：2019-12-26

申请号：US16430136

申请日：2019-06-03

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Pramit MANNA ,  Abhijit B. MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/033 ,  H01J37/317 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached.

公开(公告)号：US20240090213A1

公开(公告)日：2024-03-14

申请号：US18238954

申请日：2023-08-28

Applicant: Applied Materials, Inc.

Inventor： Jialiang WANG ,  Soonil LEE ,  Eswaranand VENKATASUBRAMANIAN ,  Chang Seok KANG ,  Sanjay G. KAMATH ,  Abhijit B. MALLICK ,  Srinivas GUGGILLA ,  Amy CHILD ,  Sung-Kwan KANG ,  Balasubramanian PRANATHARTHIHARAN

IPC: H10B41/35 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H10B43/10

CPC classification number: H10B41/35 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67063 ,  H10B43/10 ,  H10B80/00

Abstract: A method of forming a semiconductor memory device includes simultaneously filling a top portion of a first high aspect ratio (HAR) structure and a top portion a second HAR structure with a silicon-containing sacrificial layer by a cycle of a deposition process and an etch process, wherein the first HAR structure has a critical dimension (CD) of between 150 nm and 250 nm, and the second HAR structure has a CD of between 250 nm and 400 nm.

公开(公告)号：US20220037154A1

公开(公告)日：2022-02-03

申请号：US17501970

申请日：2021-10-14

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Pramit MANNA ,  Abhijit B. MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/033 ,  H01J37/317 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached.

公开(公告)号：US20210043449A1

公开(公告)日：2021-02-11

申请号：US17045453

申请日：2019-04-08

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20210040618A1

公开(公告)日：2021-02-11

申请号：US16982955

申请日：2018-10-16

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit B. MALLICK

IPC: C23C16/503 ,  H01L21/02 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52

Abstract: Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process, in particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with power to create a plasma which deposits an amorphour carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.