公开(公告)号：US20240040808A1

公开(公告)日：2024-02-01

申请号：US18486919

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Kelvin Chan ,  Shantanu Kallakuri ,  Sony Varghese

IPC: H10B99/00 ,  C23C16/04 ,  C23C16/02

CPC classification number: H10B99/00 ,  C23C16/047 ,  C23C16/0281 ,  C23C16/45525

Abstract: In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.

公开(公告)号：US20230390811A1

公开(公告)日：2023-12-07

申请号：US17833408

申请日：2022-06-06

Applicant: Applied Materials, Inc.

Inventor： Khokan Chandra Paul ,  Truong Van Nguyen ,  Kelvin Chan ,  Diwakar Kedlaya ,  Anantha K. Subramani ,  Abdul Aziz Khaja ,  Vijet Patil ,  Yusheng Fang ,  Liangfa Hu ,  Prashant Kumar Kulshreshtha

IPC: B08B7/00 ,  H01J37/32 ,  B08B5/00 ,  B08B9/032

CPC classification number: B08B7/0035 ,  H01J37/32449 ,  H01J37/32357 ,  H01J37/32862 ,  B08B5/00 ,  B08B9/0328 ,  H01J2237/334 ,  H01J2237/332 ,  B08B2209/032

Abstract: Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.

公开(公告)号：US20230386839A2

公开(公告)日：2023-11-30

申请号：US18082872

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

CPC classification number: H01L21/0332 ,  H01L21/02172 ,  H01L21/0234 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02271

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20230146981A1

公开(公告)日：2023-05-11

申请号：US18093648

申请日：2023-01-05

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/50

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  C23C16/24 ,  H01L21/02664 ,  C23C16/50 ,  H01L21/02592

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon as-deposited may be characterized by less than or about 3% hydrogen incorporation.

公开(公告)号：US20230127535A1

公开(公告)日：2023-04-27

申请号：US18082872

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Gemanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US11043386B2

公开(公告)日：2021-06-22

申请号：US15959972

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  C23C16/14 ,  C23C16/452 ,  C23C16/458 ,  H01L21/768

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US20210028012A1

公开(公告)日：2021-01-28

申请号：US17070821

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Travis Koh ,  Simon Huang ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/26

Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

公开(公告)号：US20200035486A1

公开(公告)日：2020-01-30

申请号：US16590734

申请日：2019-10-02

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

公开(公告)号：US20180312966A1

公开(公告)日：2018-11-01

申请号：US15770252

申请日：2016-10-22

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen

IPC: C23C16/02 ,  H01L21/285 ,  C23C16/14 ,  C23C16/455

CPC classification number: H01L21/68771 ,  C23C16/00 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/68764

Abstract: Methods for depositing a film comprising cyclical exposure of a substrate surface to a silicon precursor to form a nucleation layer and sequential exposure to a metal precursor and a reductant to form a metal layer on the nucleation layer.

公开(公告)号：US20180254179A1

公开(公告)日：2018-09-06

申请号：US15755428

申请日：2016-09-15

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/768 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

Abstract: Methods for selectively depositing films by atomic layer deposition are disclosed. Substrate surfaces are passivated by hydrosilylation to prevent deposition and allow selective deposition on unpassivated surfaces.