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公开(公告)号:US11827980B2
公开(公告)日:2023-11-28
申请号:US17974408
申请日:2022-10-26
Applicant: Applied Materials, Inc.
Inventor: Nitin Pathak , Amit Kumar Bansal , Tuan Anh Nguyen , Thomas Rubio , Badri N. Ramamurthi , Juan Carlos Rocha-Alvarez
IPC: C23C16/458 , C23C16/455 , C23C16/44
CPC classification number: C23C16/4585 , C23C16/4412 , C23C16/45565 , H01J2329/94 , H01J2329/941
Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.
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公开(公告)号:US11699577B2
公开(公告)日:2023-07-11
申请号:US17330061
申请日:2021-05-25
Applicant: Applied Materials, Inc.
Inventor: Sarah Michelle Bobek , Ruiyun Huang , Abdul Aziz Khaja , Amit Bansal , Dong Hyung Lee , Ganesh Balasubramanian , Tuan Anh Nguyen , Sungwon Ha , Anjana M. Patel , Ratsamee Limdulpaiboon , Karthik Janakiraman , Kwangduk Douglas Lee
CPC classification number: H01J37/32862 , B08B7/0035 , C23C14/564 , H01J37/32449 , H01J37/32504 , H01J2237/335
Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.
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公开(公告)号:US11499666B2
公开(公告)日:2022-11-15
申请号:US16400090
申请日:2019-05-01
Applicant: Applied Materials, Inc.
Inventor: Jason M. Schaller , Michael P. Rohrer , Tuan Anh Nguyen
Abstract: Embodiments described herein relate to a precision dynamic leveling mechanism for repeatedly positioning the pedestal within a process. The precision dynamic leveling mechanism includes bearing assemblies. Bearing assemblies having inner races forced against a pedestal assembly carrier and outer races forced against a guide adaptor provide nominal clearance between the inner races and outer races to allow the inner races and the outer races to slide on each other with minimal or no radial motion.
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公开(公告)号:US11492705B2
公开(公告)日:2022-11-08
申请号:US16896982
申请日:2020-06-09
Applicant: Applied Materials, Inc.
Inventor: Nitin Pathak , Amit Kumar Bansal , Tuan Anh Nguyen , Thomas Rubio , Badri N. Ramamurthi , Juan Carlos Rocha-Alvarez
IPC: C23C16/458 , C23C16/455 , C23C16/44
Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.
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公开(公告)号:US11293099B2
公开(公告)日:2022-04-05
申请号:US16867307
申请日:2020-05-05
Applicant: Applied Materials, Inc.
Inventor: Amit Kumar Bansal , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Sam H. Kim , Tuan Anh Nguyen
IPC: C23C16/455
Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.
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公开(公告)号:US10431480B2
公开(公告)日:2019-10-01
申请号:US15091260
申请日:2016-04-05
Applicant: Applied Materials, Inc.
Inventor: Tuan Anh Nguyen , Amit Kumar Bansal , Juan Carlos Rocha-Alvarez
IPC: H01L21/67 , H01L21/687 , H01L21/66 , H01L21/02
Abstract: A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.
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公开(公告)号:US09593419B2
公开(公告)日:2017-03-14
申请号:US14632648
申请日:2015-02-26
Applicant: Applied Materials, Inc.
Inventor: Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Ramprakash Sankarakrishnan , Robert Kim , Dale R. Du Bois , Kirby Hane Floyd , Amit Kumar Bansal , Tuan Anh Nguyen
IPC: H01L21/02 , H01L21/687 , C23C16/458 , C23C16/509 , H01J37/32
CPC classification number: H01L21/02274 , C23C16/4584 , C23C16/4585 , C23C16/505 , C23C16/5096 , H01J37/32082 , H01J37/32568 , H01J37/32623 , H01J37/32715 , H01J37/32724 , H01J37/32743 , H01J2237/3321 , H01L21/67103 , H01L21/68735 , H01L21/68742 , H01L21/68764 , H01L21/68792
Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.
Abstract translation: 提供了一种用于处理衬底的方法和设备。 该装置包括基座和旋转构件,两者都可移动地设置在处理室内。 旋转构件适于旋转设置在腔室中的衬底。 衬底可以在加工过程中被边缘环支撑。 边缘环可以选择性地接合基座或旋转构件。 在一个实施例中,边缘环在沉积工艺期间接合基座,并且边缘环在基底旋转期间接合旋转构件。 处理过程中衬底的旋转可以是离散的或连续的。
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公开(公告)号:US20250115999A1
公开(公告)日:2025-04-10
申请号:US18483965
申请日:2023-10-10
Applicant: Applied Materials, Inc.
Inventor: Tuan Anh Nguyen , Rohith Kuruvath Karunakaran
IPC: C23C16/458 , H01J37/32 , H01L21/687
Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a bottom plate coupled with a bottom surface of the chamber body. The chambers may include a substrate support assembly disposed within the chamber body. The substrate support assembly may include a support plate and a support stem coupled with the support plate. The chambers may include a mounting bracket that couples the support stem with a lower surface of the bottom plate. The chambers may include a plurality of tilt actuators. Each of the tilt actuators may couple the mounting bracket with the lower surface of the bottom plate. Each of the tilt actuators may be operable to adjust a vertical distance between the lower surface of the bottom plate and the mounting bracket at a mounting site of the respective tilt actuator to adjust a planarity of the support plate relative to the bottom plate.
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公开(公告)号:US12012653B2
公开(公告)日:2024-06-18
申请号:US17210018
申请日:2021-03-23
Applicant: Applied Materials, Inc.
Inventor: Yuxing Zhang , Tuan Anh Nguyen , Amit Kumar Bansal , Nitin Pathak , Saket Rathi , Thomas Rubio , Udit S. Kotagi , Badri N. Ramamurthi , Dharma Ratnam Srichurnam
IPC: C23C16/44 , C23C16/455
CPC classification number: C23C16/4405 , C23C16/45563
Abstract: The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.
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公开(公告)号:US11443921B2
公开(公告)日:2022-09-13
申请号:US16898650
申请日:2020-06-11
Applicant: Applied Materials, Inc.
Inventor: Gaosheng Fu , Tuan Anh Nguyen , Amit Kumar Bansal
Abstract: The present disclosure provides an apparatus including a chamber body and a lid defining a volume therein. The apparatus includes a substrate support disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem, and a ground plate disposed between the support body and the stem. A top flange is coupled to a lower peripheral surface the ground plate and a bottom flange is coupled to a bottom of the chamber body. The bottom flange and the top flange is coupled to one another with a plurality of straps, each of the straps having a first end coupled to the bottom flange and a second end coupled to the top flange.
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