公开(公告)号：US10577386B2

公开(公告)日：2020-03-03

申请号：US15831621

申请日：2017-12-05

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/18 ,  C07F15/00 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10465294B2

公开(公告)日：2019-11-05

申请号：US15095342

申请日：2016-04-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

IPC: H01L21/3213 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32

Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

公开(公告)号：US20190062916A1

公开(公告)日：2019-02-28

申请号：US16115051

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis

IPC: C23C16/455 ,  C23C16/40 ,  C07F5/00

Abstract: Methods for depositing a film comprising exposing a substrate surface to a bis-amidinate metal precursor and a co-reactant to form a metal containing film are described. The bis-amidinate metal precursor comprises a metal atom comprising one or more lanthanide.

公开(公告)号：US20180342403A1

公开(公告)日：2018-11-29

申请号：US15606461

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Benjamin Schmiege

IPC: H01L21/465 ,  H01L21/02

CPC classification number: H01L21/465 ,  H01L21/0228 ,  H01L21/02565 ,  H01L21/28194 ,  H01L21/32135

Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.

公开(公告)号：US20180096847A1

公开(公告)日：2018-04-05

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/32133 ,  H01L21/32139

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US09390940B2

公开(公告)日：2016-07-12

申请号：US14206474

申请日：2014-03-12

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/302 ,  H01L21/3213 ,  C23F1/00 ,  H01J37/32 ,  C23F1/12 ,  C23F4/00

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法。 某些方法包括激活包含至少一种过渡金属的基底表面，其中基底表面的活化包括将基底表面暴露于加热，等离子体，氧化环境或卤化物转移剂以提供活化的基底表面; 以及将活化的底物表面暴露于包含路易斯碱或pi酸的试剂中，以提供包含一个或多个与试剂配位的一个或多个配体配位的过渡金属原子的气相配位络合物。 某些其它方法提供了选自多层衬底的选择性蚀刻，所述多层衬底包括Co层，Cu层和Ni层中的两层或多层。

公开(公告)号：US10906925B2

公开(公告)日：2021-02-02

申请号：US16747220

申请日：2020-01-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40 ,  C23C16/18

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20190017171A1

公开(公告)日：2019-01-17

申请号：US15649584

申请日：2017-07-13

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  Thomas Knisley ,  Benjamin Schmiege ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.

公开(公告)号：US20180155379A1

公开(公告)日：2018-06-07

申请号：US15831621

申请日：2017-12-05

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC classification number: C07F15/0053 ,  C07F15/0046 ,  C23C16/18 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20160372324A1

公开(公告)日：2016-12-22

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

Abstract translation: 公开了通过原子层沉积沉积氧化钛膜的方法。 氧化钛膜可以包括氮化钛盖，富氧氮化钛盖或混合氧化物氮化物层。 还描述了包括氧化钛间隔膜的自对准双重图案的方法。