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43 条记录 (耗时 0.036 秒)

    Photoresist stripper using nitrogen bubbler
    1.
    发明授权
    Photoresist stripper using nitrogen bubbler 失效
    使用氮气鼓泡机的光刻胶剥离器

    公开(公告)号：US06911097B1

    公开(公告)日：2005-06-28

    申请号：US09629213

    申请日：2000-07-31

    申请人： Chie-Chi Chen ,  Wen-Hsiang Tseng ,  Sheng-Liang Pan ,  Jen-Shiang Fang

    发明人： Chie-Chi Chen ,  Wen-Hsiang Tseng ,  Sheng-Liang Pan ,  Jen-Shiang Fang

    IPC分类号： B08B3/10 ,  B08B5/00 ,  H01L21/00

    CPC分类号： H01L21/67086 ,  B08B3/102 ,  Y10S438/906

    摘要： Provided is a process and apparatus characterized by a gas distribution plate in which a gas supply manifold directs gas bubbles from the bottom of a process tank upward and between wafers contained in a cassette and supported therewithin. This improved method and apparatus is used for effectively stripping photoresist from the larger semiconductor wafers having dense top conductive patterns with protuberant sidewalls. The method provides a scrubbing action that is parallel to the device array being formed on the wafer's surface. Broadly stated, the method of a chemical action on large substrates supported adjacent respective edge portions thereof in a carrier includes submerging the carrier and substrates supported thereby in a process tank containing a liquid chemical, and a gas distribution plate disposed on the bottom of the tank for directing gas bubbles upward and parallel to the surfaces of each substrate contained in the carrier to ensure that a uniform chemical action occurs.

    摘要翻译： 提供了一种工艺和装置，其特征在于气体分配板，其中气体供应歧管将处理罐底部的气泡向上引导到包含在盒中并在其中支撑的晶片之间。 这种改进的方法和装置用于从具有突出侧壁的致密顶部导电图案的较大半导体晶片有效地剥离光致抗蚀剂。 该方法提供了平行于在晶片表面上形成的器件阵列的擦洗动作。 广泛地说，在载体附近支撑在其各个边缘部分上的大的基板上的化学作用的方法包括将载体和由其支撑的基板浸没在包含液体化学品的处理槽中，以及设置在罐的底部上的气体分配板 用于将气泡向上引导并平行于包含在载体中的每个基底的表面，以确保发生均匀的化学作用。

    Method of reducing the roughness of a gate insulator layer after exposure of the gate insulator layer to a threshold voltage implantation procedure
    2.
    发明授权
    Method of reducing the roughness of a gate insulator layer after exposure of the gate insulator layer to a threshold voltage implantation procedure 有权
    在栅极绝缘体层暴露于阈值电压注入程序之后减小栅极绝缘体层的粗糙度的方法

    公开(公告)号：US06281140B1

    公开(公告)日：2001-08-28

    申请号：US09591846

    申请日：2000-06-12

    申请人： Chie-Chi Chen ,  Sheng-Liang Pan

    发明人： Chie-Chi Chen ,  Sheng-Liang Pan

    IPC分类号： H01L214763

    CPC分类号： H01L21/28185 ,  H01L21/2652 ,  H01L21/3105 ,  H01L21/31105

    摘要： A process for reducing the surface roughness of a silicon dioxide gate insulator layer, that has been subjected to a boron ion implantation procedure, has been developed. The process features the use of an ammonium hydroxide-hydrogen peroxide solution, applied to the gate insulator layer, to reduce the surface roughness of the gate insulator layer, created by the boron ion implantation procedure. The treatment of the gate insulator layer, in the ammonium hydroxide-hydrogen peroxide solution, results in a surface roughness equivalent to the surface roughness of the gate insulator layer, prior to the boron ion implantation procedure.

    摘要翻译： 已经开发了一种用于降低二氧化硅栅极绝缘体层的已经经过硼离子注入工艺的表面粗糙度的方法。 该方法的特征在于使用施加到栅极绝缘体层的氢氧化铵 - 过氧化氢溶液，以减少由硼离子注入程序产生的栅极绝缘体层的表面粗糙度。 在硼离子注入程序之前，在氢氧化铵 - 过氧化氢溶液中处理栅极绝缘体层导致与栅极绝缘体层的表面粗糙度相当的表面粗糙度。

    Wafer rinse tank for metal etching and method for using
    3.
    发明授权
    Wafer rinse tank for metal etching and method for using 有权
    用于金属蚀刻的晶圆冲洗槽和使用方法

    公开(公告)号：US06360756B1

    公开(公告)日：2002-03-26

    申请号：US09325307

    申请日：1999-06-03

    申请人： Chie-Chi Chen ,  Tzu-Yang Chung ,  Szu-Yao Wang ,  Sheng-Liang Pan

    发明人： Chie-Chi Chen ,  Tzu-Yang Chung ,  Szu-Yao Wang ,  Sheng-Liang Pan

    IPC分类号： B08B704

    CPC分类号： H01L21/67057 ,  B08B3/102 ,  Y10S134/902

    摘要： A rinse tank for rinsing electronic substrates after a chemical process and a method for utilizing such rinse tank are provided. In the rinse tank, devices for performing a quick dump rinse; for performing a cascade overflow rinse and for feeding an inert gas bubbling are provided in the cavity of a single rinse tank. By utilizing the present invention novel rinse tank, the processing problems frequently observed in conventional rinse tanks where two rinse tanks are required for the quick dump rinse and for the cascade overflow rinse, such as particle re-deposition and a large floor space area requirement are eliminated. Furthermore, the wafer rinse process after a metal etching process can be accomplished in a total process time that is at least 2˜3 minutes shorter than that required by using conventional rinse tanks.

    摘要翻译： 提供了一种用于在化学过程之后冲洗电子基板的冲洗槽和用于使用这种冲洗槽的方法。 在冲洗槽中，进行快速冲洗冲洗的装置; 在单个冲洗槽的空腔中设置用于进行级联溢流冲洗和用于进料惰性气体鼓泡的装置。 通过利用本发明的新型漂洗槽，在常规冲洗槽中经常观察到的处理问题，其中需要两个漂洗槽用于快速冲洗冲洗和级联溢流冲洗，例如颗粒再沉积和大的占地空间面积要求， 消除了 此外，在金属蚀刻工艺之后的晶片冲洗过程可以在比使用常规冲洗槽所需的总处理时间短至少2〜3分钟的时间内完成。

    Material to improve image sensor yield during wafer sawing
    4.
    发明授权
    Material to improve image sensor yield during wafer sawing 失效
    材料可以提高晶圆锯切时的图像传感器产量

    公开(公告)号：US07071032B2

    公开(公告)日：2006-07-04

    申请号：US10431275

    申请日：2003-05-07

    申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Fu-Tien Weng

    发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Fu-Tien Weng

    IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC分类号： H01L21/6836 ,  H01L21/78 ,  H01L27/14683 ,  H01L2221/68327

    摘要： A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

    摘要翻译： 提供了一种新的方法，在将晶片分离成单独的芯片的过程之前处理晶片。 已经在其上形成CMOS图像传感器装置的晶片的第一表面涂覆有不溶于水的材料层。 通过使晶片的第二表面与带接触而将晶片附接到带。 通过接近晶片的第一表面并通过首先穿过已经涂覆在晶片的第一表面上的材料层，然后通过晶片锯切，停止在带的表面，将晶片分离。 将彻底的水冲洗施加到单片晶片的表面，接着进行晶片清洁以应用特定的化学品用于此目的。 单片模具现在从胶带中取出并通过将模具安装，引线接合，将模具包围在模具化合物中并标记包装件的步骤进一步处理。

    High transmittance overcoat for microlens arrays in semiconductor color imagers
    5.
    发明授权
    High transmittance overcoat for microlens arrays in semiconductor color imagers 有权
    用于半导体彩色成像器中的微透镜阵列的高透射率外涂层

    公开(公告)号：US07009772B2

    公开(公告)日：2006-03-07

    申请号：US10957920

    申请日：2004-10-04

    申请人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Juno Chang ,  Kuo-Liang Lu

    发明人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Juno Chang ,  Kuo-Liang Lu

    IPC分类号： G02B27/10

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14623 ,  H01L31/02327

    摘要： A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectric fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for low-cost, high volume manufacturing of CMOS and CCD color video cameras.

    摘要翻译： 在微透镜层之上施加具有有效平面顶表面和特定光学和材料特性的透光率外涂层以延长焦距并增强半导体阵列彩色成像装置的长焦距微透镜的性能。 公开了实现优化的长焦距微透镜性能的几何光学设计因子和微电子制造序列。 示出了本发明中教导的自适应过程的主要优点，以实现对过程和材料变化的实时补偿调整。 外涂层工艺可实现简化的单层集成微透镜光学器件，用于CMOS和CCD彩色摄像机的低成本，大批量制造。

    Method and apparatus for measuring gripping strength of a vacuum wand
    6.
    发明授权
    Method and apparatus for measuring gripping strength of a vacuum wand 失效
    用于测量真空棒的夹紧强度的方法和装置

    公开(公告)号：US06971270B2

    公开(公告)日：2005-12-06

    申请号：US10782036

    申请日：2004-02-19

    申请人： Ruei-Hung Jang ,  Chih-Lin Ying ,  Tsung-Chi Hsieh ,  Sheng-Liang Pan ,  Ching-Hui Tai

    发明人： Ruei-Hung Jang ,  Chih-Lin Ying ,  Tsung-Chi Hsieh ,  Sheng-Liang Pan ,  Ching-Hui Tai

    IPC分类号： G01L1/00 ,  G01L5/00 ,  G01L5/22 ,  G01L7/00

    CPC分类号： G01L5/0033 ,  G01L5/226

    摘要： A method and apparatus for measuring the vacuum gripping strength of a vacuum wand or robotic arm provides a pressure gauge and a conduit extending from the pressure gauge and terminating at an opening formed in a receiving surface. A vacuum wand head is positioned on the receiving surface such that the gripping surface of the vacuum wand forms a conterminous boundary with the receiving surface and the vacuum port of the vacuum wand is aligned over the opening formed in the receiving surface. The receiving surface replicates a wafer surface so that the same vacuum gripping strength as would be delivered to a wafer being gripped by the vacuum wand, is thereby sensed by the pressure gauge. Spring loaded positioning members act in conjunction with a clamp member and a mechanical stop position the vacuum wand head in the receiving area and over the opening and also to assure that the gripping surface of the vacuum wand head is flush against the surface of the receiving area. Diminution of vacuum gripping strength caused by scratches or other defects of the gripping surface that cause vacuum leaks between gripping surface and the wafer surface, are similarly reproduced and sensed by the pressure gauge.

    摘要翻译： 用于测量真空棒或机器人手臂的真空夹紧强度的方法和装置提供压力计和从压力计延伸并终止于形成在接收表面中的开口的导管。 真空棒头定位在接收表面上，使得真空棒的抓握表面与接收表面形成一个连续的边界，并且真空棒的真空端口在形成在接收表面中的开口上对准。 接收表面复制晶片表面，从而通过压力计感测到与由真空棒夹持的晶片相同的真空夹紧强度。 弹簧加载的定位构件与夹紧构件一起作用并且机械地将真空棒头位于接收区域中并在开口上并且还确保真空棒头的夹持表面与接收区域的表面齐平 。 通过压力计类似地再现和感测由夹紧表面上的擦伤或其他缺陷导致抓握表面和晶片表面之间的真空泄漏的真空夹紧强度的减小。

    Method to enhance the adhesion between dry film and seed metal
    7.
    发明授权
    Method to enhance the adhesion between dry film and seed metal 有权
    提高干膜和种子金属之间粘附的方法

    公开(公告)号：US06926818B1

    公开(公告)日：2005-08-09

    申请号：US09961557

    申请日：2001-09-24

    申请人： Yih-Ann Lin ,  Tung-Heng Shie ,  Kai-Ming Ching ,  Sheng-Liang Pan ,  Kuo-Liang Lu

    发明人： Yih-Ann Lin ,  Tung-Heng Shie ,  Kai-Ming Ching ,  Sheng-Liang Pan ,  Kuo-Liang Lu

    IPC分类号： C25D5/02

    CPC分类号： C25D5/022 ,  H01L2224/0401 ,  H01L2224/05557

    摘要： A method of forming a bump structure through the use of an electroplating solution, comprising the following steps. A substrate having an overlying conductive structure is provided. A patterned dry film resist is formed over the conductive structure. The patterned dry film resist having a trench exposing a portion of conductive structure. The patterned dry film resist adhering to the conductive structure at an interface. The structure is treated with a treatment that increases the adherence of the patterned dry film resist to the conductive structure at the interface. A conductive plug is over the exposed portion of the conductive structure within the trench through the use of the electroplating solution. The increased adhesion of the patterned dry film resist to the conductive structure at the interface preventing the electroplating solution from penetrating the interface of the patterned dry film resist and the conductive structure during the formation of the conductive plug. The patterned dry film resist is removed from the conductive structure. The conductive plug is reflowed to form the bump structure.

    摘要翻译： 通过使用电镀液形成凸点结构的方法，包括以下步骤。 提供具有上覆导电结构的基板。 在导电结构上形成图案化的干膜抗蚀剂。 图案化的干膜抗蚀剂具有暴露导电结构的一部分的沟槽。 在界面处附着在导电结构上的图案化的干膜抗蚀剂。 通过增加图案化的干膜抗蚀剂在界面处的导电结构的粘附性的处理来处理该结构。 通过使用电镀溶液，导电插塞在沟槽内的导电结构的暴露部分之上。 图案化的干膜抗蚀剂在界面处增加了对导电结构的粘附，防止电镀溶液在形成导电插塞期间渗透图案化的干膜抗蚀剂和导电结构的界面。 从导电结构去除图案化的干膜抗蚀剂。 导电塞被回流以形成凸块结构。

    Method and system for patterning alignment marks on a transparent substrate
    9.
    发明授权
    Method and system for patterning alignment marks on a transparent substrate 有权
    在透明基板上图案化对准标记的方法和系统

    公开(公告)号：US07838386B2

    公开(公告)日：2010-11-23

    申请号：US12235960

    申请日：2008-09-23

    申请人： Ruei-Hung Jang ,  Ya-Wen Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

    发明人： Ruei-Hung Jang ,  Ya-Wen Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

    IPC分类号： H01L21/76 ,  H01L21/00 ,  H01L23/544

    CPC分类号： G02B26/0841

    摘要： Disclosed is a method and a system for forming alignment marks on a transparent substrate. A light reflective layer is deposited over an optically transparent substrate of a wafer. A region is defined around an alignment mark on the optically transparent substrate. The light reflective layer is removed from a substantial portion of the transparent substrate excluding the region. In addition, a micro electro-mechanical systems device is disclosed. The device comprises an optically transparent substrate, at least one optically partially transparent alignment mark on the optically transparent substrate, and a plurality of reflective elements or imaging pixels attached to the optically transparent substrate.

    摘要翻译： 公开了一种在透明基板上形成对准标记的方法和系统。 光反射层沉积在晶片的光学透明衬底上。 围绕光学透明基板上的对准标记限定区域。 除了该区域之外，从透明基板的大部分除去光反射层。 另外，公开了一种微电子机械系统装置。 该器件包括光学透明衬底，在光学透明衬底上的至少一个光学部分透明的对准标记，以及附接到光学透明衬底的多个反射元件或成像像素。