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    Silicon containing material for patterning polymeric memory element
    2.
    发明授权
    Silicon containing material for patterning polymeric memory element 有权
    含硅材料用于图案化聚合物记忆元件

    公开(公告)号：US06803267B1

    公开(公告)日：2004-10-12

    申请号：US10614484

    申请日：2003-07-07

    申请人： Ramkumar Subramanian ,  Christopher F. Lyons ,  Matthew S. Buynoski ,  Patrick K. Cheung ,  Angela T. Hui ,  Ashok M. Khathuria ,  Sergey D. Lopatin ,  Minh Van Ngo ,  Jane V. Oglesby ,  Terence C. Tong ,  James J. Xie

    发明人： Ramkumar Subramanian ,  Christopher F. Lyons ,  Matthew S. Buynoski ,  Patrick K. Cheung ,  Angela T. Hui ,  Ashok M. Khathuria ,  Sergey D. Lopatin ,  Minh Van Ngo ,  Jane V. Oglesby ,  Terence C. Tong ,  James J. Xie

    IPC分类号： H01L21336

    CPC分类号： H01L27/28 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0018

    摘要： The present invention provides a method to fabricate an organic memory device, wherein the fabrication method includes forming a lower electrode, depositing a passive material over the surface of the lower electrode, applying an organic semiconductor material over the passive material, and operatively coupling the an upper electrode to the lower electrode through the organic semiconductor material and the passive material. Patterning of the organic semiconductor material is achieved by depositing a silicon-based resist over the organic semiconductor, irradiating portions of the silicon-based resist and patterning the silicon-based resist to remove the irradiated portions of the silicon-based resist. Thereafter, the exposed organic semiconductor can be patterned, and the non-irradiated silicon-based resist can be stripped to expose the organic semiconductor material that can be employed as a memory cell for single and multi-cell memory devices. A partitioning component can be integrated with the memory device to facilitate stacking memory devices and programming, reading, writing and erasing memory elements.

    摘要翻译： 本发明提供一种制造有机存储器件的方法，其中所述制造方法包括形成下电极，在所述下电极的表面上沉积无源材料，在所述被动材料上施加有机半导体材料，以及将所述有源半导体材料 上电极通过有机半导体材料和被动材料到下电极。 有机半导体材料的图案化是通过在有机半导体上沉积硅基抗蚀剂，照射硅基抗蚀剂的部分并图案化硅基抗蚀剂以除去硅基抗蚀剂的照射部分来实现的。 此后，可以对暴露的有机半导体进行构图，并且可以剥离未照射的硅基抗蚀剂以暴露可用作单电池和多电池存储器件的存储器单元的有机半导体材料。 分区组件可以与存储器件集成，以便于堆叠存储器件和编程，读取，写入和擦除存储器元件。

    Etch-back process for capping a polymer memory device
    7.
    发明授权
    Etch-back process for capping a polymer memory device 有权
    用于封盖聚合物存储器件的蚀刻工艺

    公开(公告)号：US07323418B1

    公开(公告)日：2008-01-29

    申请号：US11102004

    申请日：2005-04-08

    申请人： Minh Van Ngo ,  Angela T. Hui ,  Sergey D. Lopatin

    发明人： Minh Van Ngo ,  Angela T. Hui ,  Sergey D. Lopatin

    IPC分类号： H01L21/302

    CPC分类号： G11C13/0016 ,  G11C13/0014 ,  H01L27/2409 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608 ,  H01L45/1683 ,  H01L51/0591

    摘要： The present invention leverages an etch-back process to provide an electrode cap for a polymer memory element. This allows the polymer memory element to be formed within a via embedded in layers formed on a substrate. By utilizing the etch-back process, the present invention provides tiny electrical contacts necessary for the proper functioning of polymer memory devices that utilize the vias. In one instance of the present invention, one or more via openings are formed in a dielectric layer to expose an underlying layer. A polymer layer is then formed within the via on the underlying layer with a top electrode material layer deposited over the polymer layer, filling the remaining portion of the via. Excess portions of the top electrode material are then removed by an etching process to form an electrode cap that provides an electrical contact point for the polymer memory element.

    摘要翻译： 本发明利用回蚀工艺来提供用于聚合物存储元件的电极帽。 这允许聚合物存储元件形成在嵌入在衬底上形成的层中的通孔内。 通过利用回蚀工艺，本发明提供了利用通孔的聚合物存储器件的适当功能所需的微小电触点。 在本发明的一个实例中，在电介质层中形成一个或多个通孔以露出下层。 然后在下层上的通孔内形成聚合物层，其中沉积在聚合物层上的顶部电极材料层填充通孔的剩余部分。 然后通过蚀刻工艺去除顶部电极材料的多余部分以形成提供聚合物存储元件的电接触点的电极帽。

    Method of making an organic memory cell
    8.
    发明授权
    Method of making an organic memory cell 有权
    制造有机记忆体的方法

    公开(公告)号：US07374654B1

    公开(公告)日：2008-05-20

    申请号：US10978845

    申请日：2004-11-01

    申请人： Mark S. Chang ,  Sergey D. Lopatin ,  Ramkumar Subramanian

    发明人： Mark S. Chang ,  Sergey D. Lopatin ,  Ramkumar Subramanian

    IPC分类号： C25F3/00 ,  C25F7/00 ,  C25D5/18 ,  C25D5/10 ,  B23H7/00

    CPC分类号： C23C28/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/56 ,  H01L27/285

    摘要： A method of making an organic memory cell which comprises two electrodes with a controllably conductive media between the two electrodes is disclosed. The present invention involves providing a dielectric layer having formed therein one or more first electrode pads; removing a portion of the first electrode pad to form a recessed area on top of the pads and in the dielectric layer using reverse electroplating; forming a controllably conductive media over the first electrode pad in the recessed area; and forming a second electrode over the conductive media. The controllably conductive media contains an organic semiconductor layer and a passive layer.

    摘要翻译： 公开了一种制造有机存储单元的方法，该方法包括在两个电极之间具有可控导电介质的两个电极。 本发明涉及提供在其中形成有一个或多个第一电极焊盘的电介质层; 去除所述第一电极焊盘的一部分以在所述焊盘的顶部和所述电介质层中使用反向电镀形成凹陷区域; 在所述凹陷区域中的所述第一电极焊盘上形成可控导电介质; 以及在所述导电介质上形成第二电极。 可控导电介质包含有机半导体层和无源层。