-
公开(公告)号:US08580683B2
公开(公告)日:2013-11-12
申请号:US13246556
申请日:2011-09-27
申请人: Chung Yu Wang , Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin
发明人: Chung Yu Wang , Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin
IPC分类号: H01L23/28
CPC分类号: H01L21/78 , H01L21/561 , H01L23/16 , H01L23/3128 , H01L23/562 , H01L24/13 , H01L24/16 , H01L25/0655 , H01L2224/13111 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81815 , H01L2924/01322 , H01L2924/12042 , H01L2924/15311 , H01L2924/157 , H01L2924/18161 , H01L2924/3511 , H01L2224/16225 , H01L2924/00012 , H01L2924/00 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029
摘要: Methods and apparatus for performing molding on die on wafer interposers. A method includes receiving an interposer assembly having a die side and an opposite side including two or more integrated circuit dies mounted on the die side of the interposer, the interposer assembly having spaces formed on the die side of the interposer between the two or more integrated circuit dies; mounting at least one stress relief feature on the die side of the interposer assembly in one of the spaces between the two or more integrated circuit dies; and molding the integrated circuit dies using a mold compound, the mold compound surrounding the two or more integrated circuit dies and the at least one stress relief feature. An apparatus is disclosed having integrated circuits mounted on a die side of an interposer, stress relief features between the integrated circuits and mold compound over the integrated circuits.
摘要翻译: 用于在晶片插入件上的模具上进行模制的方法和装置。 一种方法包括接收具有管芯侧面和相对侧的插入件组件,所述插入件组件包括安装在所述插入件的裸片侧上的两个或多个集成电路管芯,所述插入器组件具有形成在所述插入件的裸片侧上的两个或更多个集成 电路模具; 在所述两个或更多个集成电路管芯之间的空间之一中在所述插入器组件的管芯侧上安装至少一个应力释放特征; 以及使用模具化合物模制所述集成电路模具,围绕所述两个或更多个集成电路管芯的所述模具化合物以及所述至少一个应力释放特征。 公开了一种装置,其集成电路安装在插入件的裸片侧,集成电路之间的应力消除特征和集成电路上的模具化合物。
-
公开(公告)号:US08501590B2
公开(公告)日:2013-08-06
申请号:US13176606
申请日:2011-07-05
申请人: Chung Yu Wang , Kung-Chen Yeh , Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin
发明人: Chung Yu Wang , Kung-Chen Yeh , Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin
IPC分类号: H01L21/78
CPC分类号: H01L23/58 , H01L21/486 , H01L21/673 , H01L21/6835 , H01L21/6836 , H01L23/147 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/5384 , H01L24/97 , H01L25/0655 , H01L2221/68331 , H01L2221/68381 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/01322 , H01L2924/15311 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00
摘要: Methods and apparatus for performing dicing of die on wafer interposers. Methods are disclosed that include receiving an interposer assembly including one or more integrated circuit dies mounted on a die side of an interposer substrate and having scribe areas defined in spaces between the integrated circuit dies, the interposer having an opposite side for receiving external connectors; mounting the die side of the interposer assembly to a tape assembly, the tape assembly comprising an adhesive tape and preformed spacers disposed between and filling gaps between the integrated circuit dies; and sawing the interposer assembly by cutting the opposite side of the interposer in the scribe areas to make cuts through the interposer, the cuts separating the interposer into one or more die on wafer assemblies. Apparatuses are disclosed for use with the methods.
摘要翻译: 用于在晶片插入件上进行裸片切割的方法和装置。 公开了包括接收包括安装在插入器基板的裸片侧上的一个或多个集成电路管芯并且在集成电路管芯之间的空间中限定的划线区域的插入件组件的方法,所述插入器具有用于接收外部连接器的相对侧; 将所述插入器组件的模具侧安装到带组件上,所述带组件包括粘合带和设置在所述集成电路管芯之间的填充间隙之间的预成型间隔件; 以及通过在所述划线区域中切割所述插入件的相对侧来切割所述插入件组件,以切割所述插入件,所述切口将所述插入件分离成晶片组件上的一个或多个模具。 公开了与该方法一起使用的装置。
-
公开(公告)号:US20130075937A1
公开(公告)日:2013-03-28
申请号:US13246556
申请日:2011-09-27
申请人: Chung Yu Wang , Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin
发明人: Chung Yu Wang , Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin
CPC分类号: H01L21/78 , H01L21/561 , H01L23/16 , H01L23/3128 , H01L23/562 , H01L24/13 , H01L24/16 , H01L25/0655 , H01L2224/13111 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81815 , H01L2924/01322 , H01L2924/12042 , H01L2924/15311 , H01L2924/157 , H01L2924/18161 , H01L2924/3511 , H01L2224/16225 , H01L2924/00012 , H01L2924/00 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029
摘要: Methods and apparatus for performing molding on die on wafer interposers. A method includes receiving an interposer assembly having a die side and an opposite side including two or more integrated circuit dies mounted on the die side of the interposer, the interposer assembly having spaces formed on the die side of the interposer between the two or more integrated circuit dies; mounting at least one stress relief feature on the die side of the interposer assembly in one of the spaces between the two or more integrated circuit dies; and molding the integrated circuit dies using a mold compound, the mold compound surrounding the two or more integrated circuit dies and the at least one stress relief feature. An apparatus is disclosed having integrated circuits mounted on a die side of an interposer, stress relief features between the integrated circuits and mold compound over the integrated circuits.
摘要翻译: 用于在晶片插入件上的模具上进行模制的方法和装置。 一种方法包括接收具有管芯侧面和相对侧的插入件组件,所述插入件组件包括安装在所述插入件的裸片侧上的两个或多个集成电路管芯,所述插入器组件具有形成在所述插入件的裸片侧上的两个或更多个集成 电路模具; 在所述两个或更多个集成电路管芯之间的空间之一中在所述插入器组件的管芯侧上安装至少一个应力释放特征; 以及使用模具化合物模制所述集成电路模具,围绕所述两个或更多个集成电路管芯的所述模具化合物以及所述至少一个应力释放特征。 公开了一种装置,其集成电路安装在插入件的裸片侧,集成电路之间的应力消除特征和集成电路上的模具化合物。
-
公开(公告)号:US20130009316A1
公开(公告)日:2013-01-10
申请号:US13176606
申请日:2011-07-05
申请人: Chung Yu Wang , Kung-Chen Yeh , Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin
发明人: Chung Yu Wang , Kung-Chen Yeh , Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin
CPC分类号: H01L23/58 , H01L21/486 , H01L21/673 , H01L21/6835 , H01L21/6836 , H01L23/147 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/5384 , H01L24/97 , H01L25/0655 , H01L2221/68331 , H01L2221/68381 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/01322 , H01L2924/15311 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00
摘要: Methods and apparatus for performing dicing of die on wafer interposers. Methods are disclosed that include receiving an interposer assembly including one or more integrated circuit dies mounted on a die side of an interposer substrate and having scribe areas defined in spaces between the integrated circuit dies, the interposer having an opposite side for receiving external connectors; mounting the die side of the interposer assembly to a tape assembly, the tape assembly comprising an adhesive tape and preformed spacers disposed between and filling gaps between the integrated circuit dies; and sawing the interposer assembly by cutting the opposite side of the interposer in the scribe areas to make cuts through the interposer, the cuts separating the interposer into one or more die on wafer assemblies. Apparatuses are disclosed for use with the methods.
摘要翻译: 用于在晶片插入件上进行裸片切割的方法和装置。 公开了包括接收包括安装在插入器基板的裸片侧上的一个或多个集成电路管芯并且在集成电路管芯之间的空间中限定的划线区域的插入件组件的方法,所述插入器具有用于接收外部连接器的相对侧; 将所述插入器组件的模具侧安装到带组件上,所述带组件包括粘合带和设置在所述集成电路管芯之间的填充间隙之间的预成型间隔件; 以及通过在所述划线区域中切割所述插入件的相对侧来切割所述插入件组件,以切割所述插入件,所述切口将所述插入件分离成晶片组件上的一个或多个模具。 公开了与该方法一起使用的装置。
-
公开(公告)号:US20130049195A1
公开(公告)日:2013-02-28
申请号:US13215959
申请日:2011-08-23
申请人: Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin , Shin-Puu Jeng , Chen-Hua Yu
发明人: Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L23/488 , H01L21/78
CPC分类号: H01L21/78 , H01L21/561 , H01L23/3128 , H01L23/49816 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/48 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05025 , H01L2224/05026 , H01L2224/05572 , H01L2224/13022 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/17181 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73204 , H01L2224/81193 , H01L2224/83104 , H01L2224/9202 , H01L2224/94 , H01L2224/97 , H01L2225/06506 , H01L2225/06513 , H01L2225/06541 , H01L2225/06568 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , Y02P80/30 , H01L2924/00 , H01L2224/81 , H01L2224/11 , H01L2924/00012 , H01L2924/014 , H01L2224/85 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A method includes performing a laser grooving to remove a dielectric material in a wafer to form a trench, wherein the trench extends from a top surface of the wafer to stop at an intermediate level between the top surface and a bottom surface of the wafer. The trench is in a scribe line between two neighboring chips in the wafer. A polymer is filled into the trench and then cured. After the step of curing the polymer, a die saw is performed to separate the two neighboring chips, wherein a kerf line of the die saw cuts through a portion of the polymer filled in the trench.
摘要翻译: 一种方法包括执行激光切槽以去除晶片中的电介质材料以形成沟槽,其中沟槽从晶片的顶表面延伸以在晶片的顶表面和底表面之间的中间水平处停止。 沟槽在晶片中的两个相邻芯片之间的划线中。 将聚合物填充到沟槽中,然后固化。 在固化聚合物的步骤之后,执行模锯以分离两个相邻的芯片,其中模具的切口线切割填充在沟槽中的聚合物的一部分。
-
公开(公告)号:US08569086B2
公开(公告)日:2013-10-29
申请号:US13216825
申请日:2011-08-24
申请人: Jing-Cheng Lin , Chih-Wei Wu , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
发明人: Jing-Cheng Lin , Chih-Wei Wu , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L21/00
CPC分类号: H01L23/49816 , H01L21/563 , H01L21/78 , H01L23/3185 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L2224/73204 , H01L2924/01322 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/00 , H01L2924/00012
摘要: A method and apparatus for separating a substrate into individual dies and the resulting structure is provided. A modification layer, such as an amorphous layer, is formed within the substrate. A laser focused within the substrate may be used to create the modification layer. The modification layer creates a relatively weaker region that is more prone to cracking than the surrounding substrate material. As a result, the substrate may be pulled apart into separate sections, causing cracks the substrate along the modification layers. Dice or other components may be attached to the substrate before or after separation.
摘要翻译: 提供了一种用于将基底分离成单个模具的方法和装置,并且提供了所得到的结构。 在衬底内形成诸如非晶层的改性层。 可以使用聚焦在衬底内的激光来产生修饰层。 改性层产生比周围的基材更容易破裂的相对较弱的区域。 结果,衬底可以被拉开到分开的部分中,从而沿着修饰层裂开衬底。 在分离之前或之后,骰子或其它组分可附着于基底。
-
公开(公告)号:US08557684B2
公开(公告)日:2013-10-15
申请号:US13215959
申请日:2011-08-23
申请人: Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin , Shin-Puu Jeng , Chen-Hua Yu
发明人: Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L21/301
CPC分类号: H01L21/78 , H01L21/561 , H01L23/3128 , H01L23/49816 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/48 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05025 , H01L2224/05026 , H01L2224/05572 , H01L2224/13022 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/17181 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73204 , H01L2224/81193 , H01L2224/83104 , H01L2224/9202 , H01L2224/94 , H01L2224/97 , H01L2225/06506 , H01L2225/06513 , H01L2225/06541 , H01L2225/06568 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , Y02P80/30 , H01L2924/00 , H01L2224/81 , H01L2224/11 , H01L2924/00012 , H01L2924/014 , H01L2224/85 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A method includes performing a laser grooving to remove a dielectric material in a wafer to form a trench, wherein the trench extends from a top surface of the wafer to stop at an intermediate level between the top surface and a bottom surface of the wafer. The trench is in a scribe line between two neighboring chips in the wafer. A polymer is filled into the trench and then cured. After the step of curing the polymer, a die saw is performed to separate the two neighboring chips, wherein a kerf line of the die saw cuts through a portion of the polymer filled in the trench.
摘要翻译: 一种方法包括执行激光切槽以去除晶片中的电介质材料以形成沟槽,其中沟槽从晶片的顶表面延伸以在晶片的顶表面和底表面之间的中间水平处停止。 沟槽在晶片中的两个相邻芯片之间的划线中。 将聚合物填充到沟槽中,然后固化。 在固化聚合物的步骤之后,执行模锯以分离两个相邻的芯片,其中模具的切口线切割填充在沟槽中的聚合物的一部分。
-
公开(公告)号:US20130122659A1
公开(公告)日:2013-05-16
申请号:US13296922
申请日:2011-11-15
申请人: Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin , Shin-Puu Jeng , Chen-Hua Yu
发明人: Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L21/56
CPC分类号: H01L24/97 , H01L21/563 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0655 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/81192 , H01L2224/92125 , H01L2224/97 , H01L2924/15311 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2924/00
摘要: A method comprises attaching a first side of an interposer on a carrier wafer. The first side of the interposer comprises a plurality of bumps. The carrier wafer comprises a plurality of cavities formed in the carrier wafer. Each bump on the first side of the interposer can fit into its corresponding cavity on the carrier wafer. Subsequently, the method comprises attaching a semiconductor die on the second side of the interposer to form a wafer stack, detaching the wafer stack from the carrier wafer and attaching the wafer stack to a substrate.
摘要翻译: 一种方法包括将插入件的第一侧附着在载体晶片上。 插入器的第一侧包括多个凸块。 载体晶片包括形成在载体晶片中的多个空腔。 插入器的第一侧上的每个凸块可以装配到载体晶片上的相应空腔中。 随后,该方法包括在插入器的第二侧上附加半导体管芯以形成晶片堆叠,将晶片堆叠与载体晶片分离并将晶片堆叠连接到基板。
-
公开(公告)号:US20130049234A1
公开(公告)日:2013-02-28
申请号:US13216825
申请日:2011-08-24
申请人: Jing-Cheng Lin , Chih-Wei Wu , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
发明人: Jing-Cheng Lin , Chih-Wei Wu , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
CPC分类号: H01L23/49816 , H01L21/563 , H01L21/78 , H01L23/3185 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L2224/73204 , H01L2924/01322 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/00 , H01L2924/00012
摘要: A method and apparatus for separating a substrate into individual dies and the resulting structure is provided. A modification layer, such as an amorphous layer, is formed within the substrate. A laser focused within the substrate may be used to create the modification layer. The modification layer creates a relatively weaker region that is more prone to cracking than the surrounding substrate material. As a result, the substrate may be pulled apart into separate sections, causing cracks the substrate along the modification layers. Dice or other components may be attached to the substrate before or after separation.
摘要翻译: 提供了一种用于将基底分离成单个模具的方法和装置,并且提供了所得到的结构。 在衬底内形成诸如非晶层的改性层。 可以使用聚焦在衬底内的激光来产生修饰层。 改性层产生比周围的基材更容易破裂的相对较弱的区域。 结果,衬底可以被拉开到分开的部分中,从而沿着修饰层裂开衬底。 在分离之前或之后,骰子或其它组分可附着于基底。
-
公开(公告)号:US08518753B2
公开(公告)日:2013-08-27
申请号:US13296922
申请日:2011-11-15
申请人: Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin , Shin-Puu Jeng , Chen-Hua Yu
发明人: Chih-Wei Wu , Szu Wei Lu , Jing-Cheng Lin , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L21/00
CPC分类号: H01L24/97 , H01L21/563 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0655 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/81192 , H01L2224/92125 , H01L2224/97 , H01L2924/15311 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2924/00
摘要: A method comprises attaching a first side of an interposer on a carrier wafer. The first side of the interposer comprises a plurality of bumps. The carrier wafer comprises a plurality of cavities formed in the carrier wafer. Each bump on the first side of the interposer can fit into its corresponding cavity on the carrier wafer. Subsequently, the method comprises attaching a semiconductor die on the second side of the interposer to form a wafer stack, detaching the wafer stack from the carrier wafer and attaching the wafer stack to a substrate.
摘要翻译: 一种方法包括将插入件的第一侧附着在载体晶片上。 插入器的第一侧包括多个凸块。 载体晶片包括形成在载体晶片中的多个空腔。 插入器的第一侧上的每个凸块可以装配到载体晶片上的相应空腔中。 随后,该方法包括在插入器的第二侧上附加半导体管芯以形成晶片堆叠,将晶片堆叠与载体晶片分离并将晶片堆叠连接到基板。
-
-
-
-
-
-
-
-
-