Abstract:
Provided are: an adhesive that offers high adhesiveness to bond and secure an adherend even in a high-temperature environment, as long as securing is necessary. The adherend can be removed without failure and without adhesive residue once securing becomes unnecessary; and a method for processing an adherend using the adhesive. The adhesive according to the present invention contains a multivalent vinyl ether compound (A) and at least one of a compound (B) and a compound (C). The compound (B) is represented by Formula (b). The compound (C) includes two or more constitutional units each represented by Formula (c). Formulae (b) and (c) are expressed as follows:
Abstract:
Provided are a filling component useful for the production of a thin, low-profile three-dimensional integrated semiconductor device via a COW process, and a curable composition for the formation of the filling component. The filling component according to the present invention for three-dimensional mounting of semiconductor elements is used to fill gaps between laterally adjacent semiconductor elements in the production of a three-dimensional integrated semiconductor device by stacking and integrating semiconductor elements. The filling component is a component that is polished and/or ground flat from the front side of semiconductor elements while gaps between the semiconductor elements are filled with the filling component.
Abstract:
Provided is an adhesive as follows. The adhesive can bond/secure an adherend to a support with maintaining high adhesiveness during the existence of the need for securing of the adherend to the support, even in a high-temperature environment or in an environment with abrupt temperature change. The adhesive enables debonding of the adherend from the support without breakage of the adherend when the securing becomes unnecessary. The adhesive can be easily removed when remained on the adherend after debonding. The adhesive according to the present invention contains (A) a multivalent vinyl ether compound, (B) a compound including two or more of a constitutional unit represented by Formula (b), and (C) a thermoplastic resin. In the formula, X is selected from hydroxy and carboxy.
Abstract:
Provided is a curable composition having excellent film-formability and can be cured at low temperatures to form a cured product that has heat resistance, cracking resistance, and adhesiveness and adhesion to an adherend at excellent levels. The curable composition according to the present invention is a composition containing polyorganosilsesquioxanes (A). The polyorganosilsesquioxanes (A) include (a-1) an epoxy-containing polyorganosilsesquioxane having a weight-average molecular weight of 3000 or more, and (a-2) an epoxy-containing polyorganosilsesquioxane having a weight-average molecular weight of 2500 or less. The polyorganosilsesquioxanes (A) contain the components (a-1) and (a-2) in a total content of 50 weight percent or more of the total amount of the polyorganosilsesquioxanes (A). The polyorganosilsesquioxanes (A) have a ratio in content (weight ratio) of (a-1) to (a-2) of from 10:90 to 70:30.
Abstract:
Provided is a curable composition that can, when cured, form a cured product having adhesiveness and adhesion to an adherend at excellent levels. The curable composition contains a polyorganosilsesquioxane and one of (A) a compound represented by Formula (X); and (B) a polymerization stabilizer, where Formula (X) is expressed as follows: wherein r1 represents an integer from 4 to 20; L represents a group containing epoxy, oxetanyl or vinyl ether group; R11 and R12 each represent an optionally substituted hydrocarbon group; s1 represents an integer from 1 to 3; t1 represents an integer from 0 to 2, where s1 plus t1 equals 3; and R13 and R14 are selected from hydrogen and an optionally substituted hydrocarbon group. The polyorganosilsesquioxane has a number-average molecular weight of 1000 to 3000 and a molecular-weight dispersity of 1.0 to 3.0, includes a constitutional unit represented by Formula (1), has a ratio of a constitutional unit represented by Formula (I) to a constitutional unit represented by Formula (II) of 5 or more, and has a total proportion of the constitutional unit represented by Formula (1) and a constitutional unit represented by Formula (4) of 55 to 100 mole percent of all siloxane constitutional units. [R1SiO3/2] (1), [RaSiO3/2] (I), [RbSiO2/2(ORc)] (II), [R1SiO2/2(ORc)] (4), where R1 represents an epoxy-containing group; Ra and Rb are each selected from an epoxy-containing group, substituted or unsubstituted aryl, substituted or unsubstituted aralkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, and hydrogen; and Rc is selected from hydrogen and C1-C4 alkyl.
Abstract:
Provided is an adhesive composition for multilayer semiconductors. The adhesive composition gives, when applied and dried by heating, an adhesive layer that has approximately no adhesiveness at a temperature lower than 50° C., but, when heated at such a temperature as to less cause damage to semiconductor chips, offers adhesiveness and is rapidly cured thereafter. This adhesive composition for multilayer semiconductors includes a polymerizable compound (A), at least one of a cationic-polymerization initiator (B1) and an anionic-polymerization initiator (B2), and a solvent (C). The polymerizable compound (A) contains 80% by weight or more of an epoxide having a softening point or melting point of 50° C. or higher. The cationic-polymerization initiator (B1) gives a composition having a thermal curing time of 3.5 minutes or longer at 130° C., where the composition contains 1 part by weight of the cationic-polymerization initiator (B1) and 100 parts by weight of 3,4-epoxycyclohexylmethyl (3,4-epoxy)cyclohexanecarboxylate. The anionic-polymerization initiator (B2) gives a composition having a thermal curing time of 3.5 minutes or longer at 130° C., where the composition contains 1 part by weight of the anionic-polymerization initiator (B2) and 100 parts by weight of bisphenol-A diglycidyl ether.