摘要:
A method of preparing an ultra sharp tip, in particular a single atom tip, is provided, comprising providing a tip having a shank, an apex, and a coating covering the shank and the apex; locally removing the coating from the apex by field evaporation; and partially or fully restoring the coating at the apex.
摘要:
A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission centre of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.
摘要:
A method of operating a focused ion beam device for emitting during operation a focused ion beam including ions of a gas generated at a first partial pressure, comprising cleaning an emitter tip positioned in an emitter tip region of the focused ion beam device, the cleaning comprises introducing the gas into the emitter tip region such that the gas has a second partial pressure of at least two times the first pressure. Further, a focused ion beam device is provided, comprising a gas field emitter tip (13) in an emitter tip region emitting an ion beam including ions of a gas, a gas inlet for supplying a gas with different pressures (110), a gas outlet (120), a pressure measurement device for measuring the pressure in the emitter tip region and a control unit (130) for controlling switching between an operation mode and a cleaning mode, further controlling the pressures in the emitter tip region and being connected to the pressure measurement device.
摘要:
A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap (G), a particle optics configured for separating the signal beam into a first portion of the signal beam and into at least one second portion of the signal beam, and configured for focusing the first portion of the signal beam and the at least one second portion of the signal beam. The particle optics includes an aperture plate and at least a first inner aperture openings in the aperture plate, and at least one second radially outer aperture opening in the aperture plate, wherein the first aperture opening has a concave shaped portion, particularly wherein the first aperture opening has a pincushion shape.
摘要:
A retarding field scanning electron microscope for imaging a specimen is described. The microscope includes a scanning deflection assembly configured for scanning an electron beam over the specimen, one or more controllers in communication with the scanning deflection assembly for controlling a scanning pattern of the electron beam, and a combined magnetic-electrostatic objection lens configured for focusing the electron beam, wherein the objective lens includes a magnetic lens portion and an electrostatic lens portion. The electrostatic lens portion includes an first electrode configured to be biased to a high potential, and a second electrode disposed between the first electrode and the specimen plane, the second electrode being configured to be biased to a potential lower than the first electrode, wherein the second electrode is configured for providing a retarding field of the retarding field scanning electron microscope. The retarding field scanning electron microscope further includes a voltage supply being connected to the second electrode for biasing the second electrode to a potential and being in communication with the one or more controllers, wherein the one or more controllers synchronize a variation of the potential of the second electrode with the scanning pattern of the electron beam.
摘要:
A gas field ion source is described for a charged particle beam device having a charged particle beam column. The gas field ion source includes an emitter unit, a cooling unit, and a thermal conductivity unit for thermal conductivity from the cooling unit to the emitter unit, wherein the thermal conductivity unit is adapted for reduction of vibration transfer from the cooling unit to the emitter unit.
摘要:
The present invention provides a charged particle beam device for irradiating a specimen with ions. The charged particle beam device comprises a gas field ion source unit for generating a beam of ions, the gas field ion source having an emitter unit having an emitter unit tip; and a gas supply system for directing gas to the emitter unit tip. The gas supply system comprises an array of capillary tubes. Further, the present invention provides a method for irradiating a specimen with ions by operating a charged particle beam device having a gas field ion source, wherein the method comprises the step of directing a gas flow to an emitter unit tip, wherein the gas flow has a gas beam aperture angle of 3° or less.
摘要:
A shielding member for a charged particle beam apparatus includes a conductive substrate; and a through hole extending through the conductive substrate. The conductive substrate is comprised of a material having a specific electrical resistivity in a range from about 106 Ωcm to about 1012 Ωcm.
摘要:
A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.