公开(公告)号：US11955961B2

公开(公告)日：2024-04-09

申请号：US17879047

申请日：2022-08-02

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hong Gu Ji ,  Dong Min Kang ,  Byoung-Gue Min ,  Jongmin Lee ,  Kyu Jun Cho

IPC: H03K3/00 ,  H03K17/687 ,  H03K17/693

CPC classification number: H03K17/687

Abstract: Disclosed is a switch circuit for an ultra-high frequency band, which includes a transistor including a first terminal connected to an input stage, a second terminal connected to an output stage, and a gate terminal, an inductor connected to the transistor in parallel, between the input stage and the output stage, a variable gate driver to apply a gate input voltage to the gate terminal and, an input resistor connected between the variable gate driver and the gate terminal. The variable gate driver adjusts the gate input voltage to be in one of a first voltage level for turning on the transistor and a second voltage level for turning off the transistor. The second voltage level varies depending on a capacitance between the first terminal and the second terminal, when the transistor is in a turn-off state.

公开(公告)号：US11817826B2

公开(公告)日：2023-11-14

申请号：US17886061

申请日：2022-08-11

Applicant: Electronics and Telecommunications Research Institute

Inventor： Woojin Chang ,  Dong Min Kang ,  Byoung-Gue Min ,  Jong Yul Park ,  Jongmin Lee ,  Yoo Jin Jang ,  Kyu Jun Cho ,  Hong Gu Ji

IPC: H03D7/12 ,  H03H7/38 ,  H03D7/14

CPC classification number: H03D7/125 ,  H03D7/14 ,  H03H7/38

Abstract: Disclosed is a frequency mixer. The frequency mixer includes a first matching circuit that generates a matched local oscillator (LO) signal based on an LO signal, a non-linear circuit that generates a non-linear LO signal based on the matched LO signal, a second matching circuit that generates a matched radio frequency (RF) signal based on an RF signal, a mixing circuit that generates a mixed signal based on a mixing of the non-linear LO signal and the matched RF signal, a third matching circuit that generates an intermediate frequency (IF) signal based on the mixed signal, wherein the non-linear circuit includes a non-linear transistor, a bias transistor, and an internal matching circuit connected in series.

公开(公告)号：US10608102B2

公开(公告)日：2020-03-31

申请号：US16137235

申请日：2018-09-20

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hokyun Ahn ,  Min Jeong Shin ,  Jeong Jin Kim ,  Hae Cheon Kim ,  Jae Won Do ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hyung Seok Lee ,  Jong-Won Lim ,  Sungjae Chang ,  Hyunwook Jung ,  Kyu Jun Cho ,  Dong Min Kang ,  Dong-Young Kim ,  Seong-Il Kim ,  Sang-Heung Lee ,  Jongmin Lee ,  Hong Gu Ji

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/778 ,  H01L29/66 ,  H01L21/3065 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/423

Abstract: Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.

公开(公告)号：US10256811B2

公开(公告)日：2019-04-09

申请号：US15654792

申请日：2017-07-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Woojin Chang ,  Jong-Won Lim ,  Dong Min Kang ,  Dong-Young Kim ,  Seong-il Kim ,  Hae Cheon Kim ,  Jae Won Do ,  Byoung-Gue Min ,  Min Jeong Shin ,  Hokyun Ahn ,  Hyung Sup Yoon ,  Sang-Heung Lee ,  Jongmin Lee ,  Sungjae Chang ,  Yoo Jin Jang ,  Hyunwook Jung ,  Kyu Jun Cho ,  Hong Gu Ji

IPC: H03K17/687 ,  H03K17/693 ,  G11C5/14 ,  H03K19/0175 ,  H03K3/353 ,  H03K17/0812 ,  H03K17/10 ,  H03K17/12 ,  H03K17/14 ,  H03K17/16 ,  H03K17/28

Abstract: Provided is a cascode circuit including first and second transistors connected between a drain terminal and a source terminal in cascode form, a level sifter configured to change a voltage level of a switching control signal applied to a gate terminal and provide the changed switching control signal to a gate of the first transistor, a buffer configured to delay the switching control signal and provide the delayed switching control signal to a gate of the second transistor, and a first resistor connected between the level shifter and the gate of the first transistor.

公开(公告)号：US20140184438A1

公开(公告)日：2014-07-03

申请号：US14139221

申请日：2013-12-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Dong Pil Chang ,  In Bok Yom ,  Youn Sub Noh ,  Jin Cheol Jeong ,  Hong Gu Ji ,  Man Seok Uhm

IPC: G01S13/02

CPC classification number: G01S7/032 ,  G01S2007/027

Abstract: A transmit/receive module for radar may include a radio frequency (RF) circuit unit including an RF substrate and an RF part; and a direct current (DC) power supply circuit unit including a printed circuit board (PCB) and a DC power supply circuit part. The RF circuit unit and the DC power supply circuit unit may be disposed so that a rear surface of the RF circuit unit faces a rear surface of the DC power supply circuit unit, and may be assembled to have a separate space using at least one separation wall.

Abstract translation: 用于雷达的发射/接收模块可以包括包括RF基板和RF部分的射频（RF）电路单元; 以及包括印刷电路板（PCB）和直流电源电路部分的直流（DC）电源电路单元。 RF电路单元和DC电源电路单元可以被布置成使得RF电路单元的后表面面向DC电源电路单元的后表面，并且可以组装成具有使用至少一个分离的单独空间 壁。