Abstract:
Provided is a pattern forming method including a step of applying a solvent (S) onto a substrate, a step of applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate, on which the solvent (S) has been applied, to form an actinic ray-sensitive or radiation-sensitive film, a step of exposing the actinic ray-sensitive or radiation-sensitive film, and a step of developing the exposed actinic ray-sensitive or radiation-sensitive film with a developing liquid containing an organic solvent to form a negative-type pattern.
Abstract:
Provided is an actinic-ray- or radiation-sensitive resin composition, including any of compounds of general formula (1) below that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer.
Abstract:
An object of the present invention is to provide a chemical solution that, in the case of being used in a step of bringing a contact-target member and the chemical solution into contact with each other, is less likely to cause a predetermined defect in the contact-target member. A chemical solution according to the present invention includes an organic solvent and a metal-containing particle including a metal element selected from the group consisting of Fe, Ni, and Zn, wherein an I value determined by a method X is 0.010 to 10.000, method X: the chemical solution is applied onto a substrate to prepare a subject; a surface of the subject is analyzed by being scanned with laser using laser-ablation-inductively coupled plasma-mass spectrometry, to obtain charts for the metal elements in which an abscissa axis indicates laser scanning time and an ordinate axis indicates ion detection intensity; the ion detection intensity of the charts is accumulated for the scanning time to determine accumulated ion detection intensities of the metal elements; the accumulated ion detection intensities of the metal elements are added up to determine a total accumulated ion detection intensity; and the total accumulated ion detection intensity is divided by a laser scanning area to obtain an I value in units of counts/mm2.
Abstract:
An object of the present invention is to provide a chemical liquid supply method capable of reducing the content of impurities in a chemical liquid. Another object of the present invention is to provide a pattern forming method. The chemical liquid supply method according to an embodiment of the present invention is a chemical liquid supply method of supplying a chemical liquid containing an organic solvent through a pipe line that an apparatus for semiconductor devices comprises, the chemical liquid supply method having a gas pumping step of sending the chemical liquid by pressurization using a gas, in which a moisture content in the gas is 0.00001 to 1 ppm by mass with respect to a total mass of the gas.
Abstract:
Provided are a method for inspecting a chemical solution, the method being able to analyze minute foreign matter in the chemical solution, a method for producing a chemical solution, a method for controlling a chemical solution, a method for producing a semiconductor device, a method for inspecting a resist composition, the method being able to analyze minute foreign matter in the resist composition, a method for producing a resist composition, a method for controlling a resist composition, and a method for checking a contamination status of a semiconductor manufacturing apparatus, the method being able to control minute foreign matter in the semiconductor manufacturing apparatus. The method for inspecting a chemical solution includes a step 1X of preparing a chemical solution; a step 2X of applying the chemical solution onto a semiconductor substrate; and a step 3X of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry.
Abstract:
Provided are a defect removal device and a defect removal method capable of removing defects of a semiconductor substrate with high accuracy, and a pattern forming method and a method of manufacturing an electronic device using the semiconductor substrate from which defects on a surface are removed. The defect removal device includes: a first light source unit that emits incidence light for detecting a defect on a semiconductor substrate; a surface defect measurement unit including a detection unit that detects the defect on the semiconductor substrate based on radiated light radiated by reflection or scattering of the incidence light from the defect of the semiconductor substrate; a removal unit that irradiates the semiconductor substrate with laser light to remove the defect based on position information of the defect on the semiconductor substrate; and an alignment unit that adjusts optical axes of the incidence light and the laser light, in which the optical axes of the incidence light and the laser light are adjusted by the alignment unit such that the incidence light and the laser light are emitted to the semiconductor substrate.
Abstract:
Provided are an analysis apparatus and an analysis method capable of analyzing a smaller defect on a surface of a semiconductor substrate. An analysis apparatus includes a surface defect measurement unit that measures presence or absence of a defect on a surface of a semiconductor substrate, and obtains positional information on the surface of the semiconductor substrate for the defect on the surface of the semiconductor substrate, and an analysis section that performs inductively coupled plasma mass spectrometry by irradiating the defect on the surface of the semiconductor substrate with laser light based on the positional information of the defect on the surface of the semiconductor substrate, and collecting an analysis sample obtained by the irradiation using a carrier gas.
Abstract:
An object of the present invention is to provide a chemical liquid storage body which hardly causes short and defects in a formed wiring board in a case where a chemical liquid stored in the chemical liquid storage body is used in a wiring forming process including photolithography after the chemical liquid storage body is preserved for a certain period of time. The chemical liquid storage body according to an embodiment of the present invention includes a container and a chemical liquid stored in the container, in which the chemical liquid contains at least one kind of specific metal component selected from the group consisting of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A/B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.
Abstract:
According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition containing (A) a resin containing a repeating unit represented by general formula (1) below and a repeating unit that is decomposed by an action of an acid to generate an alkali-soluble group, and (B) a compound that generates the acid when exposed to actinic rays or radiation, where L represents a bivalent connecting group, R1 represents a hydrogen atom or an alkyl group, and Z represents a cyclic acid anhydride structure.
Abstract:
An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.