PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    1.
    发明申请
    PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 审中-公开
    图案形成方法,制造电子装置的方法和电子装置

    公开(公告)号:US20160054658A1

    公开(公告)日:2016-02-25

    申请号:US14918949

    申请日:2015-10-21

    Abstract: Provided is a pattern forming method including a step of applying a solvent (S) onto a substrate, a step of applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate, on which the solvent (S) has been applied, to form an actinic ray-sensitive or radiation-sensitive film, a step of exposing the actinic ray-sensitive or radiation-sensitive film, and a step of developing the exposed actinic ray-sensitive or radiation-sensitive film with a developing liquid containing an organic solvent to form a negative-type pattern.

    Abstract translation: 提供了一种图案形成方法,包括将溶剂(S)施加到基板上的步骤,将光化学敏感或辐射敏感性树脂组合物施加到其上施加了溶剂(S)的基材上的步骤, 以形成光化射线敏感或辐射敏感膜,暴露光化射线敏感或辐射敏感膜的步骤,以及用显影液显影暴露的光化射线敏感或辐射敏感膜的步骤,所述显影液含有 有机溶剂形成负型图案。

    CHEMICAL SOLUTION
    3.
    发明申请

    公开(公告)号:US20250028249A1

    公开(公告)日:2025-01-23

    申请号:US18893990

    申请日:2024-09-24

    Abstract: An object of the present invention is to provide a chemical solution that, in the case of being used in a step of bringing a contact-target member and the chemical solution into contact with each other, is less likely to cause a predetermined defect in the contact-target member. A chemical solution according to the present invention includes an organic solvent and a metal-containing particle including a metal element selected from the group consisting of Fe, Ni, and Zn, wherein an I value determined by a method X is 0.010 to 10.000, method X: the chemical solution is applied onto a substrate to prepare a subject; a surface of the subject is analyzed by being scanned with laser using laser-ablation-inductively coupled plasma-mass spectrometry, to obtain charts for the metal elements in which an abscissa axis indicates laser scanning time and an ordinate axis indicates ion detection intensity; the ion detection intensity of the charts is accumulated for the scanning time to determine accumulated ion detection intensities of the metal elements; the accumulated ion detection intensities of the metal elements are added up to determine a total accumulated ion detection intensity; and the total accumulated ion detection intensity is divided by a laser scanning area to obtain an I value in units of counts/mm2.

    CHEMICAL LIQUID SUPPLY METHOD AND PATTERN FORMING METHOD

    公开(公告)号:US20230229078A1

    公开(公告)日:2023-07-20

    申请号:US18177742

    申请日:2023-03-02

    CPC classification number: G03F7/0048 G03F7/16 G03F7/40

    Abstract: An object of the present invention is to provide a chemical liquid supply method capable of reducing the content of impurities in a chemical liquid. Another object of the present invention is to provide a pattern forming method.
    The chemical liquid supply method according to an embodiment of the present invention is a chemical liquid supply method of supplying a chemical liquid containing an organic solvent through a pipe line that an apparatus for semiconductor devices comprises, the chemical liquid supply method having a gas pumping step of sending the chemical liquid by pressurization using a gas, in which a moisture content in the gas is 0.00001 to 1 ppm by mass with respect to a total mass of the gas.

    ANALYSIS APPARATUS AND ANALYSIS METHOD
    7.
    发明公开

    公开(公告)号:US20230369086A1

    公开(公告)日:2023-11-16

    申请号:US18357183

    申请日:2023-07-24

    CPC classification number: H01L21/67288 H01L22/12 H01J49/105 G01N21/9501

    Abstract: Provided are an analysis apparatus and an analysis method capable of analyzing a smaller defect on a surface of a semiconductor substrate. An analysis apparatus includes a surface defect measurement unit that measures presence or absence of a defect on a surface of a semiconductor substrate, and obtains positional information on the surface of the semiconductor substrate for the defect on the surface of the semiconductor substrate, and an analysis section that performs inductively coupled plasma mass spectrometry by irradiating the defect on the surface of the semiconductor substrate with laser light based on the positional information of the defect on the surface of the semiconductor substrate, and collecting an analysis sample obtained by the irradiation using a carrier gas.

    CHEMICAL LIQUID STORAGE BODY
    8.
    发明申请

    公开(公告)号:US20200181008A1

    公开(公告)日:2020-06-11

    申请号:US16787197

    申请日:2020-02-11

    Abstract: An object of the present invention is to provide a chemical liquid storage body which hardly causes short and defects in a formed wiring board in a case where a chemical liquid stored in the chemical liquid storage body is used in a wiring forming process including photolithography after the chemical liquid storage body is preserved for a certain period of time. The chemical liquid storage body according to an embodiment of the present invention includes a container and a chemical liquid stored in the container, in which the chemical liquid contains at least one kind of specific metal component selected from the group consisting of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A/B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.

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