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    ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
    1.
    发明申请
    ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
    半导体衬底的蚀刻方法，以及生产半导体器件的方法

    公开(公告)号：US20150243527A1

    公开(公告)日：2015-08-27

    申请号：US14711070

    申请日：2015-05-13

    Applicant: FUJIFILM CORPORATION

    Inventor： Naotsugu MURO ,  Tetsuya KAMIMURA ,  Tadashi INABA ,  Atsushi MIZUTANI

    IPC: H01L21/3213 ,  C09K13/08

    CPC classification number: H01L21/32134 ,  C09K13/08 ,  H01L21/31144

    Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

    Abstract translation: 一种蚀刻方法，其特征在于，在具有含有氮化钛（TiN）的第一层和含有过渡金属的第二层的基板的处理时，选择其中第一层的表面氧含量为0.1〜10％ 并将含有氢氟酸化合物和氧化剂的蚀刻液施加到基材上，从而除去第一层。

    ETCHING LIQUID, ETCHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
    2.
    发明申请
    ETCHING LIQUID, ETCHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 审中-公开
    蚀刻液，使用其的蚀刻方法和制造半导体器件的方法

    公开(公告)号：US20150225645A1

    公开(公告)日：2015-08-13

    申请号：US14692106

    申请日：2015-04-21

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA ,  Kee Young PARK ,  Naotsugu MURO ,  Tadashi INABA

    IPC: C09K13/08 ,  H01L21/306

    CPC classification number: C09K13/08 ,  H01L21/30608 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139

    Abstract: An etching liquid for processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing at least one metal selected from transition metals belonging to group 3 to group 11 of the periodic table thereby removing the first layer selectively, wherein the etching liquid contains a hexafluorosilicic acid compound, and an oxidizing agent of which concentration is 0.05% by mass or more and less than 10% by mass.

    Abstract translation: 一种用于处理具有包含氮化钛（TiN）的第一层和包含选自属于周期表第3族至第11族的过渡金属中的至少一种金属的第二层的衬底的蚀刻液体，由此选择性地除去第一层，其中 蚀刻液含有六氟硅酸化合物，其浓度为0.05质量％以上且小于10质量％的氧化剂。

    METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND ETCHING METHOD TO BE USED THEREIN
    3.
    发明申请
    METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND ETCHING METHOD TO BE USED THEREIN 有权
    生产半导体基板产品的方法及其使用的蚀刻方法

    公开(公告)号：US20140308819A1

    公开(公告)日：2014-10-16

    申请号：US14316327

    申请日：2014-06-26

    Applicant: FUJIFILM CORPORATION

    Inventor： Masashi ENOKIDO ,  Tadashi INABA ,  Atsushi MIZUTANI

    IPC: H01L21/306 ,  H01L21/308

    CPC classification number: H01L21/30608 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/32134 ,  H01L27/10852 ,  H01L28/92

    Abstract: A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.

    Abstract translation: 一种制造半导体衬底产品的方法，该方法包括：制备含有7质量％以上且25质量％以下的季铵烷基氢氧化铵的水溶液的工序; 制备具有包括多晶硅膜或非晶硅膜的硅膜的半导体衬底的步骤; 以及在80℃以上加热水溶液的步骤，将所得水溶液施加到半导体衬底上以蚀刻至少一部分硅膜。

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