Abstract:
Provide are a pattern forming method including a step (1) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition including a resin having an acid-decomposable repeating unit capable of decomposing by the action of an acid to generate an acid having a pKa of 3.0 or less, a step (2) of exposing the film using actinic rays or radiation, and a step (3) of carrying out development using a developer including an organic solvent after the exposure to form a negative tone pattern; and a method for manufacturing an electronic device, including the pattern forming method.
Abstract:
The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
Abstract:
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.
Abstract:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin and a compound that generates acid due to irradiation with an actinic ray or radiation. The resin includes a repeating unit (a) represented by Formula (I-1) and a repeating unit (b) having a group in which a protective group including a monocyclic ring leaves due to an action of an acid to generate a polar group. (In the formula, R11 and R12 each independently represent a hydrogen atom or an alkyl group. R13 represents a hydrogen atom or an alkyl group, or is a single bond or an alkylene group, and is bonded to L or Ar in the formula to form a ring. L represents a single bond or a divalent linking group. Ar represents an aromatic ring. n represents an integer of 2 or more.)
Abstract:
An actinic ray-sensitive or radiation-sensitive composition, and an actinic ray-sensitive or radiation-sensitive composition obtained by the method for producing an actinic ray-sensitive or radiation-sensitive composition each contain a cation having a metal atom, and a ligand, in which a value of σ represented by Equation (1) is 2.2 or less. A pattern forming method and the method for manufacturing an electronic device each use the actinic ray-sensitive or radiation-sensitive composition. σ = ∑ k = 1 N { ( μ - X k ) 2 × y k } ( 1 )
Abstract:
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.
Abstract:
Provided are a positive tone pattern forming method in which development is carried out using a developer containing an organic solvent with use of a composition containing (A) a resin which has a repeating unit containing a moiety capable of forming a polar interaction and whose polarity is decreased due to release of the polar interaction by the action of an acid or a base, or a composition containing (A′) a resin having a repeating unit containing a polar group and (B) a compound capable of forming a polar interaction with the polar group of the resin (A′); and an electronic device manufacturing method including such a pattern forming method.
Abstract:
There is provided a pattern forming method, including: (a) forming a film by using an electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition containing a resin (A) having a repeating unit represented by Formula (1-0) and a repeating unit represented by Formula (1-2); (b) exposing the film by using an electron beam or extreme ultraviolet ray; and (c) developing the exposed film by using a developer containing an organic solvent to form a negative pattern, wherein a content of the repeating unit represented by Formula (1-0) is 45 mol % or more based on a whole repeating units in the resin (A).
Abstract:
The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).
Abstract:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin including a repeating unit (a) represented by Formula (1); (B) a compound that generates an acid by irradiation with actinic rays or radiation; and (C) an organic solvent. A concentration of solid contents of the actinic ray-sensitive or radiation-sensitive resin composition is 4 mass % or less. (in the formula, R11 and R12 each independently represent a hydrogen atom, a halogen atom, or a monovalent organic group. R13 represents a hydrogen atom, a halogen atom, or a monovalent organic group or is a single bond or an alkylene group, and is bonded to L or Ar in the formula to form a ring. L represents a single bond or a divalent linking group. Ar represents an aromatic ring group. n represents an integer of 2 or more.)