公开(公告)号：US5372850A

公开(公告)日：1994-12-13

申请号：US18900

申请日：1993-02-17

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shin-ichi Kinouchi ,  Toshihisa Honda ,  Takeharu Kuroiwa ,  Hisao Watarai ,  Takashi Higaki

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shin-ichi Kinouchi ,  Toshihisa Honda ,  Takeharu Kuroiwa ,  Hisao Watarai ,  Takashi Higaki

IPC分类号： C23C16/40 ,  C23C16/448 ,  C23C16/00

CPC分类号： C23C16/409 ,  C23C16/4481

摘要： In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.

摘要翻译： 在使用其中通过CVD法将金属原子与有机基团通过氧原子偶联的原料化合物制造氧化物系介质薄膜的方法中。 沸点低于100℃的有机溶剂的蒸气与原料化合物接触，至少一种蒸发或输送原料化合物的方法。 氧化物系介质薄膜的原料化合物能够在比以前低的温度下稳定地蒸发并输送到反应器。 因此，可以均匀地控制组合物，并且可以制造具有良好性能的氧化物系介电薄膜。

公开(公告)号：US08378674B2

公开(公告)日：2013-02-19

申请号：US12601098

申请日：2008-05-27

申请人： Taisuke Furukawa ,  Takeharu Kuroiwa ,  Shingo Tomohisa ,  Takashi Takenaga ,  Masakazu Taki ,  Hiroshi Takada ,  Yuji Abe

发明人： Taisuke Furukawa ,  Takeharu Kuroiwa ,  Shingo Tomohisa ,  Takashi Takenaga ,  Masakazu Taki ,  Hiroshi Takada ,  Yuji Abe

IPC分类号： G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/072 ,  G01R33/091

摘要： A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

摘要翻译： 一种磁场检测装置，包括用于调整施加到磁阻元件的磁场的磁体（磁通量）。 平面图中的基板上磁体的形状在一端部侧呈锥形，在与一端部相反的另一端部侧呈大致漏斗状，另一端部宽度大于一端部 并且在输出侧端部的前方配置有磁阻元件。 在基板上的磁性体中，锥形部分的轮廓不像漏斗那样呈直线状，而是具有弯曲形状，其中第一弯曲部分以柔和曲率向外突出，第二弯曲部分向内突出，曲率类似于 第一弯曲部分的连续形成。

公开(公告)号：US20110233699A1

公开(公告)日：2011-09-29

申请号：US13073552

申请日：2011-03-28

申请人： Takashi Takenaga ,  Taisuke Furukawa ,  Takeharu Kuroiwa

发明人： Takashi Takenaga ,  Taisuke Furukawa ,  Takeharu Kuroiwa

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/0207 ,  H01L43/08

摘要： Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.

摘要翻译： 磁存储元件包括通过外部磁场改变磁化方向的记录层，具有易于轴和硬轴交叉的容易轴，第一导电层在记录层的布局位置的易轴方向交叉方向上形成磁场，第二导电 层在与第一导电层交叉的方向上延伸，并且在记录层的布置位置处在硬轴的交叉方向上形成磁场。 记录层在第一导电层和第二导电层之间具有至少一部分。 从第一和第二导电层和记录层被层叠的方向观察的平面状记录层相对于第一导电层的虚拟第一中心线位于侧面和位于另一侧的其它部分，沿着第一导电层 从层叠方向观察。 从层叠方向观察的部分的面积小于或等于其他部分的三分之一面积。

公开(公告)号：US07973376B2

公开(公告)日：2011-07-05

申请号：US12549695

申请日：2009-08-28

申请人： Haruo Furuta ,  Ryoji Matsuda ,  Shuichi Ueno ,  Takeharu Kuroiwa

发明人： Haruo Furuta ,  Ryoji Matsuda ,  Shuichi Ueno ,  Takeharu Kuroiwa

IPC分类号： H01L43/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/12

摘要： The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO2 is formed.

摘要翻译： 具有包含记忆精度不劣化的TMR膜的存储单元的半导体装置及其制造方法。 在数字线的形成区域的一部分的TMR下电极的平面图中对应的区域选择性地形成TMR元件（TMR膜，TMR上电极）。 TMR上电极由Ta的30-100nm厚度形成，并且在制造过程中也用作硬掩模。 在TMR元件的整个表面和TMR下电极的整个表面上形成由LT-SiN形成的层间绝缘膜，覆盖包括TMR下电极的侧表面的整个表面的层间绝缘膜和 包括LT-SiN。 形成覆盖整个表面并包含SiO 2的层间绝缘膜。

公开(公告)号：US20100264501A1

公开(公告)日：2010-10-21

申请号：US12528854

申请日：2008-02-25

申请人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuta Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

发明人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuta Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

公开(公告)号：US07733210B2

公开(公告)日：2010-06-08

申请号：US11378645

申请日：2006-03-20

申请人： Taisuke Furukawa ,  Hiroshi Kobayashi ,  Takashi Takenaga ,  Takeharu Kuroiwa ,  Beysen Sadeh ,  Masakazu Taki

发明人： Taisuke Furukawa ,  Hiroshi Kobayashi ,  Takashi Takenaga ,  Takeharu Kuroiwa ,  Beysen Sadeh ,  Masakazu Taki

IPC分类号： H01L43/00

CPC分类号： G01R33/093 ,  B82Y25/00

摘要： A magnetic field detector includes: a magnet; a detecting magnetic resistance element having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a reference magnetic resistance element having substantially the same layer structure as that of the detecting magnetic resistance element. A magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in a direction which is sensed by the ferromagnetic layer of the reference magnetic resistance element.

摘要翻译： 磁场检测器包括：磁体; 具有包含铁磁层的层结构的检测磁阻元件，所述电阻在所述铁磁层的磁化方向改变时改变; 以及具有与检测用磁阻元件基本相同的层结构的基准磁阻元件。 其磁强度高于饱和磁场的磁场被磁铁施加在由参考磁阻元件的铁磁层感测的方向上。

公开(公告)号：US07508203B2

公开(公告)日：2009-03-24

申请号：US12098291

申请日：2008-04-04

申请人： Takashi Takenaga ,  Hiroshi Kobayashi ,  Takeharu Kuroiwa ,  Sadeh Beysen ,  Taisuke Furukawa

发明人： Takashi Takenaga ,  Hiroshi Kobayashi ,  Takeharu Kuroiwa ,  Sadeh Beysen ,  Taisuke Furukawa

IPC分类号： G01R33/09 ,  G01R33/05 ,  G01B7/30

CPC分类号： G01R33/09 ,  B82Y25/00 ,  G01R15/205 ,  G01R33/093

摘要： A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.

摘要翻译： 具有参考磁阻元件和磁场检测磁阻元件的磁场检测器。 参考磁阻元件和磁场检测磁阻元件各自具有堆叠结构，其包括反铁磁层，铁磁材料的固定层，其具有由反铁磁层固定的磁化方向，非磁性层和铁磁性层的自由层 具有适于由外部磁场改变的磁化方向的材料。 参考磁阻元件使得固定层的磁化方向和非磁场中的自由层的磁化方向彼此平行或反平行，并且磁场检测磁阻元件使得磁化方向 和非磁场中的自由层的磁化方向彼此不同。 因此，可以提供能够在需要时单独地校准检测器的灵敏度和分辨率的磁场检测器。

公开(公告)号：US06187622B1

公开(公告)日：2001-02-13

申请号：US09003515

申请日：1998-01-06

申请人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Noboru Mikami ,  Tetsuro Makita

发明人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Noboru Mikami ,  Tetsuro Makita

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L27/10852 ,  H01L28/60

摘要： A semiconductor memory device achieves a high capacitance value even when the elements are made extremely small as the degree of integration is increased. A method of producing such a semiconductor memory maintains a high capacitance value while achieving increased integration. A semiconductor memory device includes adjacent capacitor lower electrodes which are separated by a width of 0.2 &mgr;m while the ratio of the capacitor lower electrode height to the separation width is 1, the capacitor upper electrode covers the capacitor insulation film, and steps generated in the separated portion of the capacitor lower electrodes are filled by the upper electrode material. A method of manufacturing produces a semiconductor memory device wherein the capacitor upper electrode is formed in plasma which includes etchable gas by chemical or physical action.

摘要翻译： 即使当元件的集成度增加时，半导体存储器件也实现了高的电容值。 制造这种半导体存储器的方法保持高的电容值，同时实现增加的集成。 半导体存储器件包括相邻的电容器下电极，其间隔0.2μm的宽度，而电容器下电极高度与分离宽度的比率为1，电容器上电极覆盖电容器绝缘膜，并且分离的步骤 电容器下电极的一部分由上电极材料填充。 一种制造方法产生半导体存储器件，其中电容器上电极通过化学或物理作用形成包括可蚀刻气体的等离子体。

公开(公告)号：US5668041A

公开(公告)日：1997-09-16

申请号：US632194

申请日：1996-04-15

申请人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

发明人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/04 ,  H01L27/105 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852 ,  H01L21/3205 ,  H01L28/40 ,  H01L28/55 ,  Y10S257/915 ,  Y10S438/978

摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。

公开(公告)号：US5652186A

公开(公告)日：1997-07-29

申请号：US632195

申请日：1996-04-15

申请人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

发明人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/04 ,  H01L27/105 ,  H01L21/00

CPC分类号： H01L27/10852 ,  H01L21/3205 ,  H01L28/40 ,  H01L28/55 ,  Y10S257/915 ,  Y10S438/978

摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。