公开(公告)号：US09607973B1

公开(公告)日：2017-03-28

申请号：US14946162

申请日：2015-11-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Benjamin V. Fasano ,  Michael S. Cranmer ,  Richard F. Indyk ,  Harry Cox ,  Katsuyuki Sakuma ,  Eric D. Perfecto

IPC: H01L21/44 ,  H01L25/18 ,  H01L25/00 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L23/5386 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/1146 ,  H01L2224/1184 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/81191 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81815 ,  H01L2924/014 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/157 ,  H01L2924/15717 ,  H01L2924/15738 ,  H01L2924/15788 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00014

Abstract: A method of interconnecting first and second semiconductor dies is provided. A splice interposer is attached to a top surface of a substrate through first pillars formed on a bottom surface of the splice interposer. The first semiconductor die is attached to the top surface of a substrate through second pillars formed on a bottom surface of the first semiconductor die. The first semiconductor die is attached to a top surface of the splice interposer through third pillars formed on the bottom surface of the first semiconductor. The second semiconductor die is attached to the top surface of the splice interposer through fourth pillars formed on a bottom surface of the second semiconductor die. The first to fourth plurality of pillars and the splice interposer form interconnection and wiring between the first semiconductor die, the second semiconductor die and the substrate.

公开(公告)号：US10090255B2

公开(公告)日：2018-10-02

申请号：US15010868

申请日：2016-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brittany L. Hedrick ,  Vijay Sukumaran ,  Christopher L. Tessler ,  Richard F. Indyk ,  Sarah H. Knickerbocker

IPC: H05K1/11 ,  H05K1/18 ,  H05K3/00 ,  H01L23/00 ,  H01L21/78 ,  H01L23/498 ,  H01L21/48 ,  H05K1/03 ,  H01L23/15

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.

公开(公告)号：US10002835B2

公开(公告)日：2018-06-19

申请号：US15427156

申请日：2017-02-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Benjamin V. Fasano ,  Michael S. Cranmer ,  Richard F. Indyk ,  Harry Cox ,  Katsuyuki Sakuma ,  Eric D. Perfecto

IPC: H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L23/5386 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/1146 ,  H01L2224/1184 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/81191 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81815 ,  H01L2924/014 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/157 ,  H01L2924/15717 ,  H01L2924/15738 ,  H01L2924/15788 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00014

Abstract: A semiconductor device and a stacked pillar used to interconnect a first semiconductor die and a second semiconductor die are provided. The semiconductor device has a substrate, a splice interposer, a first semiconductor die, a second semiconductor die and first to fourth plurality of pillars. The first to fourth plurality of pillars and the splice interposer form interconnection and wiring between the first semiconductor die, the second semiconductor die and the substrate. The stacked pillar has a first conductor layer formed on a surface of the first semiconductor die, a first solder layer formed on the first conductor layer, a second conductor layer formed on the first solder layer, and a second solder layer formed on the second conductor layer. The second solder layer is heat-reflowable to attach the stacked pillar to a surface of the second semiconductor.

公开(公告)号：US20170221837A1

公开(公告)日：2017-08-03

申请号：US15010868

申请日：2016-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brittany L. Hedrick ,  Vijay Sukumaran ,  Christopher L. Tessler ,  Richard F. Indyk ,  Sarah H. Knickerbocker

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H05K3/00 ,  H01L21/56 ,  H05K1/03 ,  H05K1/11 ,  H05K1/02 ,  H01L21/78 ,  H01L21/48

CPC classification number: H01L23/562 ,  H01L21/486 ,  H01L21/78 ,  H01L23/15 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2224/11 ,  H01L2224/73204 ,  H05K1/0306 ,  H05K3/0026 ,  H05K3/0052 ,  H05K3/0094 ,  H05K2201/0959 ,  H05K2201/10378

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.