公开(公告)号：US09824949B2

公开(公告)日：2017-11-21

申请号：US15197861

申请日：2016-06-30

Applicant: GaN Systems Inc.

Inventor： Cameron McKnight-MacNeil ,  Greg P. Klowak ,  Ahmad Mizan ,  Stephen Coates

IPC: H01L23/495 ,  H01L29/78 ,  H01L23/31 ,  H01L29/20 ,  H01L21/78 ,  H01L23/492 ,  H01L21/56 ,  H01L23/00 ,  H01L23/482 ,  H01L21/48

CPC classification number: H01L23/3114 ,  H01L21/4828 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/492 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L24/97 ,  H01L29/2003 ,  H01L29/7816 ,  H01L2224/0239 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/352 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40227 ,  H01L2224/40245 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/41051 ,  H01L2224/4118 ,  H01L2224/73203 ,  H01L2224/73263 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/84815 ,  H01L2224/8484 ,  H01L2224/92143 ,  H01L2224/97 ,  H01L2924/00015 ,  H01L2924/01014 ,  H01L2924/04642 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/17747 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0665 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/81 ,  H01L2224/48

Abstract: Packaging solutions for devices and systems comprising lateral GaN power transistors are disclosed, including components of a packaging assembly, a semiconductor device structure, and a method of fabrication thereof. In the packaging assembly, a GaN die, comprising one or more lateral GaN power transistors, is sandwiched between first and second leadframe layers, and interconnected using low inductance interconnections, without wirebonding. For thermal dissipation, the dual leadframe package assembly can be configured for either front-side or back-side cooling. Preferred embodiments facilitate alignment and registration of high current/low inductance interconnects for lateral GaN devices, in which contact areas or pads for source, drain and gate contacts are provided on the front-side of the GaN die. By eliminating wirebonding, and using low inductance interconnections with high electrical and thermal conductivity, PQFN technology can be adapted for packaging GaN die comprising one or more lateral GaN power transistors.