公开(公告)号：US20240021569A1

公开(公告)日：2024-01-18

申请号：US18477635

申请日：2023-09-29

申请人： FUJI ELECTRIC CO., LTD.

发明人： Yoko NAKAMURA ,  Akihiko IWAYA ,  Mai SAITO ,  Tsubasa WATAKABE

IPC分类号： H01L23/00 ,  H01L23/373 ,  H01L23/31

CPC分类号： H01L24/40 ,  H01L23/3735 ,  H01L23/3107 ,  H01L24/35 ,  H01L2224/40175 ,  H01L2224/4007 ,  H01L2224/352

摘要： A semiconductor module includes a stacked substrate includes an insulating plate and first and second circuit boards arranged on the insulating plate, a semiconductor element arranged on the first circuit board, and a metal wiring board having a first bonding portion bonded to an upper surface of the semiconductor element via a first bonding material. The first bonding portion includes a first plate-shaped portion that has at a lower surface thereof, a boss protruding toward the semiconductor element, and at an upper surface thereof, a first recess at a position corresponding to a position immediately above the boss and multiple second recesses. At the upper surface of the first plate-shaped portion, each of the second recesses has an opening area smaller than an opening area of the first recess.

公开(公告)号：US09633967B2

公开(公告)日：2017-04-25

申请号：US14910355

申请日：2014-10-06

申请人： NSK Ltd.

发明人： Takashi Sunaga ,  Noboru Kaneko ,  Osamu Miyoshi ,  Ryoichi Suzuki

IPC分类号： H01L29/66 ,  H01L27/08 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H01L23/373 ,  H01L23/498 ,  H01L23/492 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L24/41 ,  H01L23/3735 ,  H01L23/492 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L29/7393 ,  H01L29/78 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/29101 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/35847 ,  H01L2224/3701 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37611 ,  H01L2224/4001 ,  H01L2224/40095 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/4099 ,  H01L2224/4112 ,  H01L2224/73263 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84138 ,  H01L2224/8421 ,  H01L2224/84424 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/9221 ,  H01L2924/00015 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/19105 ,  H01L2924/35121 ,  H01L2924/365 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/48 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/00013

摘要： To provide a semiconductor module that has high reliability of electric connection by a solder and is inexpensive. A joint surface of an electrode jointing portion that is opposed to a surface to be jointed of a gate electrode of a bare-chip FET and a joint surface of a substrate jointing portion that is opposed to a surface to be jointed of another wiring pattern include an outgas releasing mechanism that makes outgas generated from a molten solder during solder jointing of a metal plate connector be released from solders interposed between the joint surfaces and the surfaces to be jointed.

公开(公告)号：US20150342074A1

公开(公告)日：2015-11-26

申请号：US14435682

申请日：2013-10-25

申请人： NSK LTD.

发明人： Takashi SUNAGA ,  Noboru KANEKO ,  Osamu MIYOSHI

IPC分类号： H05K7/02

CPC分类号： H05K7/02 ,  H01L23/142 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/291 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/35847 ,  H01L2224/3701 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/4103 ,  H01L2224/4112 ,  H01L2224/48 ,  H01L2224/73263 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84424 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/85 ,  H01L2224/9221 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/181 ,  H05K2201/10166 ,  H05K2201/1031 ,  H05K2201/10409 ,  Y02P70/611 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/33 ,  H01L2924/00012 ,  H01L2924/00

摘要： To provide a semiconductor module capable of shortening of the manufacturing tact time, reducing the manufacturing costs, and improving assembility. A semiconductor module (30) includes substrate (31) made of metal, an insulating layer (32) formed on the substrate (31), a plurality of wiring patterns (33a to 33d) formed on the insulating layer (32), a bare-chip transistor (35) mounted on a wiring pattern (33a) via a solder (34a); and a metal plate connector (36a, 36b) jointing an electrode (S, G) of the bare-chip transistor (35) and a wiring pattern (33b, 33c) via a solder (34b, 34c). The metal plate connector (36a, 36b) has a bridge shape, and has a flat surface and a center of gravity at a middle portion of the component.

摘要翻译： 提供能够缩短制造节拍时间，降低制造成本，提高组装性的半导体模块。 半导体模块（30）包括由金属制成的基板（31），形成在基板（31）上的绝缘层（32），形成在绝缘层（32）上的多个布线图案（33a〜33d） 通过焊料（34a）安装在布线图案（33a）上的芯片晶体管（35）; 以及通过焊料（34b，34c）将裸芯片晶体管（35）的电极（S，G）和布线图案（33b，33c）接合的金属板连接器（36a，36b）。 金属板连接器（36a，36b）具有桥接形状，并且在部件的中间部分具有平坦表面和重心。

公开(公告)号：US20150221582A1

公开(公告)日：2015-08-06

申请号：US14456722

申请日：2014-08-11

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Takeshi Miyakawa

IPC分类号： H01L23/495 ,  H01B5/00 ,  H01B1/02 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49537 ,  H01B1/02 ,  H01B5/00 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49568 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/291 ,  H01L2224/29147 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/35847 ,  H01L2224/3701 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/40499 ,  H01L2224/4103 ,  H01L2224/41051 ,  H01L2224/73263 ,  H01L2224/83143 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84143 ,  H01L2224/84345 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： According to one embodiment, a connector frame includes a frame part, a first connector projected from the frame part and integrated with the frame part, and a second connector projected from the frame part and integrated with the frame part. The first connector includes a first portion and a second portion provided between the first portion and the frame part. The second portion is thinner than the first portion. The second connector is as thick as the second portion of the first connector.

摘要翻译： 根据一个实施例，连接器框架包括框架部分，从框架部分突出并与框架部分一体化的第一连接器和从框架部分突出并与框架部分一体化的第二连接器。 第一连接器包括设置在第一部分和框架部分之间的第一部分和第二部分。 第二部分比第一部分薄。 第二连接器与第一连接器的第二部分一样厚。

公开(公告)号：US08975117B2

公开(公告)日：2015-03-10

申请号：US13369059

申请日：2012-02-08

申请人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

发明人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L24/95 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32058 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/3512 ,  H01L2224/352 ,  H01L2224/37099 ,  H01L2224/37111 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/37164 ,  H01L2224/37169 ,  H01L2224/37572 ,  H01L2224/376 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37647 ,  H01L2224/37655 ,  H01L2224/37664 ,  H01L2224/37669 ,  H01L2224/40095 ,  H01L2224/40101 ,  H01L2224/40175 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40491 ,  H01L2224/73253 ,  H01L2224/73263 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/84455 ,  H01L2224/84464 ,  H01L2224/84469 ,  H01L2224/84801 ,  H01L2224/84825 ,  H01L2224/9221 ,  H01L2224/92246 ,  H01L2224/95 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2224/37599

摘要： A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.

摘要翻译： 一种方法包括提供具有第一主表面和第二主表面的半导体芯片。 将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向载体。 第一层焊料材料设置在第一主表面和载体之间。 包括第一接触区域的接触夹子被放置在半导体芯片上，其中第一接触区域面对半导体芯片的第二主表面。 第二层焊料材料设置在第一接触区域和第二主表面之间。 此后，将热量施加到第一和第二层焊料材料，以在载体，半导体芯片和接触夹之间形成扩散焊料接合​​。

公开(公告)号：US09589868B2

公开(公告)日：2017-03-07

申请号：US15064750

申请日：2016-03-09

申请人： GaN Systems Inc.

发明人： Cameron McKnight-MacNeil ,  Greg P. Klowak ,  Ahmad Mizan

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  H01L21/56 ,  H01L21/78 ,  H01L23/498 ,  H01L23/492 ,  H01L23/482

CPC分类号： H01L23/49503 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/492 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/0239 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16245 ,  H01L2224/245 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40227 ,  H01L2224/40245 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/41051 ,  H01L2224/4118 ,  H01L2224/73203 ,  H01L2224/73263 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/8484 ,  H01L2224/92143 ,  H01L2224/97 ,  H01L2924/00015 ,  H01L2924/01014 ,  H01L2924/04642 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/17747 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/81 ,  H01L2224/48

摘要： Packaging solutions for large area, GaN die comprising one or more lateral GaN power transistor devices and systems are disclosed. Packaging assemblies comprise an interposer sub-assembly comprising the lateral GaN die and a leadframe. The GaN die is electrically connected to the leadframe using bump or post interconnections, silver sintering, or other low inductance interconnections. Then, attachment of the GaN die to the substrate and the electrical connections of the leadframe to contacts on the substrate are made in a single process step. The sub-assembly may be mounted in a standard power module, or alternatively on a substrate, such as a printed circuit board. For high current applications, the sub-assembly also comprises a ceramic substrate for heat dissipation. This packaging scheme provides interconnections with lower inductance and higher current capacity, simplifies fabrication, and enables improved thermal matching of components, compared with conventional wirebonded power modules.

摘要翻译： 公开了用于大面积的包括一个或多个横向GaN功率晶体管器件和系统的GaN管芯的封装解决方案。 包装组件包括包括横向GaN管芯和引线框架的插入件子组件。 GaN管芯使用凸点或柱互连，银烧结或其他低电感互连电连接到引线框架。 然后，在单个工艺步骤中制造GaN管芯到衬底的连接以及引线框架与衬底上的触点的电连接。 子组件可以安装在标准功率模块中，或者替代地安装在诸如印刷电路板的基板上。 对于高电流应用，子组件还包括用于散热的陶瓷衬底。 与传统的引线键合功率模块相比，该封装方案提供了具有较低电感和较高电流容量的互连，简化了制造，并且能够改进组件的热匹配。

公开(公告)号：US09312234B2

公开(公告)日：2016-04-12

申请号：US14127187

申请日：2013-05-27

申请人： NSK Ltd.

发明人： Takashi Sunaga ,  Noboru Kaneko ,  Osamu Miyoshi

IPC分类号： H01L29/76 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H01L29/78 ,  H01L23/373 ,  H01L23/498

CPC分类号： H01L24/43 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/75 ,  H01L24/77 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L29/78 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/35847 ,  H01L2224/3701 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/4103 ,  H01L2224/4112 ,  H01L2224/41175 ,  H01L2224/43848 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/494 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/75272 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84424 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/85 ,  H01L2224/85815 ,  H01L2224/9221 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/3701 ,  H05K1/181 ,  H05K2201/10166 ,  H05K2201/1031 ,  H05K2201/10409 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/33 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/48227

摘要： There is provided a semiconductor module and a method for manufacturing the same which make it possible to joint the electrode of the bare-chip transistor and the wiring pattern on the substrate by solder mounting operation, in the same process of solder mounting operation for mounting the bare-chip transistor or other surface mounting devices on the wiring patterns on the substrate. A semiconductor module includes: a plurality of wiring patterns formed on an insulating layer; a bare-chip transistor mounted on one wiring pattern out of the plurality of wiring patterns via a solder; and a copper connector constituted of a copper plate for jointing an electrode formed on a top surface of the bare-chip transistor and another wiring pattern out of the plurality of wiring patterns via a solder.

摘要翻译： 提供了一种半导体模块及其制造方法，其可以通过焊接安装操作将裸芯片晶体管的电极和布线图案与基板上的布线图案相连接，在相同的焊接安装操作过程中， 裸芯片晶体管或其他表面安装器件在基板上的布线图案上。 半导体模块包括：形成在绝缘层上的多个布线图案; 通过焊料在多个布线图案中安装在一个布线图案上的裸芯片晶体管; 以及铜连接器，其由用于通过焊料将形成在裸芯片晶体管的顶表面上的电极和多个布线图案中的另一布线图案连接的铜板构成。

公开(公告)号：US20150357303A1

公开(公告)日：2015-12-10

申请号：US14735300

申请日：2015-06-10

申请人： Continental Automotive GmbH

发明人： Nico Kohl ,  Martin Metzler ,  Sven Egelkraut ,  Markus Leicht

IPC分类号： H01L23/00 ,  H01L23/498

CPC分类号： H01L23/49544 ,  H01L23/3735 ,  H01L23/495 ,  H01L23/49548 ,  H01L23/49838 ,  H01L23/49844 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L2224/29339 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/3756 ,  H01L2224/37639 ,  H01L2224/4001 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40106 ,  H01L2224/40221 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/73263 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/84201 ,  H01L2224/84203 ,  H01L2224/84205 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2224/84825 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/92142 ,  H01L2224/92246 ,  H01L2924/00015 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00012

摘要： A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.

摘要翻译： 功率半导体电路包括至少一个具有至少一个接触区域的半导体，以及至少一个接合导体条，其具有紧固在至少一个接触区域上的至少一个接触区域。 接合导体条的接触区域包括切口。

公开(公告)号：US20150221581A1

公开(公告)日：2015-08-06

申请号：US14475438

申请日：2014-09-02

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Koji TAMURA

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L23/49513 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49531 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49551 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L2224/27312 ,  H01L2224/291 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/3226 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40499 ,  H01L2224/41051 ,  H01L2224/4118 ,  H01L2224/48245 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/73271 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/832 ,  H01L2224/83203 ,  H01L2224/8321 ,  H01L2224/83447 ,  H01L2224/838 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84138 ,  H01L2224/84203 ,  H01L2224/8421 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/92242 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/27

摘要： According to one embodiment, a first frame includes a first thin plate section and a first thick plate section. A second frame includes a second thin plate section and a second thick plate section. A semiconductor chip includes a first electrode bonded to a first inner surface of the first thin plate section of the first frame, and a second electrode bonded to a second inner surface of the second thick plate section of the second frame. A resin layer seals the semiconductor chip, but leaves exposed the first outer surface of the first frame and the second outer surface of the second frame.

摘要翻译： 根据一个实施例，第一框架包括第一薄板部分和第一厚板部分。 第二框架包括第二薄板部分和第二厚板部分。 半导体芯片包括接合到第一框架的第一薄板部分的第一内表面的第一电极和结合到第二框架的第二厚板部分的第二内表面的第二电极。 树脂层密封半导体芯片，但是露出第一框架的第一外表面和第二框架的第二外表面。

公开(公告)号：US20140299998A1

公开(公告)日：2014-10-09

申请号：US14359630

申请日：2012-11-20

申请人： Robert Bosch GmbH

发明人： Eckart Geinitz ,  Gerhard Braun ,  Erik Sueske

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L23/49838 ,  H01L21/768 ,  H01L23/49513 ,  H01L23/49524 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37011 ,  H01L2224/37012 ,  H01L2224/371 ,  H01L2224/4007 ,  H01L2224/40245 ,  H01L2224/49171 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/07025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention relates to a method for making contact with a semiconductor (10), and to a contact arrangement (1) for a semiconductor (10), wherein the semiconductor (10) is a really connected to a first contact partner (20) at at least one first area by the formation of a first soldering layer (30) having a predefined thickness. According to the invention, a polyimide layer (14) is applied as delimiting means on the semiconductor (10), said polyimide layer predefining the dimensions and/or the form of at least one soldering area (12) of the semiconductor (10).

摘要翻译： 本发明涉及一种用于与半导体（10）接触的方法以及用于半导体（10）的接触装置（1），其中半导体（10）真正连接到第一接触伙伴（20） 至少一个第一区域，通过形成具有预定厚度的第一焊接层（30）。 根据本发明，在半导体（10）上作为限制装置施加聚酰亚胺层（14），所述聚酰亚胺层预先确定半导体（10）的至少一个焊接区域（12）的尺寸和/或形式。