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1.发明授权Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations 有权通过部分或完全松弛的具有失配位错的铝铟镓氮层，在半极性氮化物量子阱中进行各向异性应变控制公开(公告)号：US08481991B2
公开(公告)日：2013-07-09
申请号：US12861652
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01L29/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
摘要翻译： 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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2.发明申请ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 有权通过部分或完全放松的铝氮化镓氮化物层与杂质分离的二氧化氮量子阱中的各向异性应变控制公开(公告)号：US20110062415A1
公开(公告)日：2011-03-17
申请号：US12861652
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
摘要翻译： 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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3.发明授权Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface 有权部分或完全松弛的合金上的半极性或非极性氮化物器件在异质界面处具有失配位错公开(公告)号：US09159553B2
公开(公告)日：2015-10-13
申请号：US12861532
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01S5/00 , H01L21/02 , B82Y20/00 , H01L33/00 , H01S5/32 , H01S5/343 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
摘要翻译： 具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。 这可以用作高In组合设备的模板层。 具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW）） 有可能
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4.发明申请SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE 有权部分或完全放松的合金的二极体氮化物在异质结中具有杂质偏离公开(公告)号：US20110064103A1
公开(公告)日：2011-03-17
申请号：US12861532
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
摘要翻译： 具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。 这可以用作高In组合设备的模板层。 具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW）） 有可能
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5.发明授权Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition 有权通过金属有机化学气相沉积制造非极性氮化铟镓薄膜，异质结构和器件公开(公告)号：US07504274B2
公开(公告)日：2009-03-17
申请号：US11621479
申请日：2007-01-09
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L21/205
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。
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6.发明授权Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition 有权通过金属有机化学气相沉积制造非极性氮化铟镓薄膜，异质结构和器件公开(公告)号：US08882935B2
公开(公告)日：2014-11-11
申请号：US13909775
申请日：2013-06-04
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L33/16 , H01L21/02 , H01S5/343 , B82Y20/00 , H01L33/00 , C30B29/40 , C30B25/02 , H01L33/06 , H01S5/32 , H01S5/02
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。
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公开(公告)号：US08502246B2
公开(公告)日：2013-08-06
申请号：US12370479
申请日：2009-02-12
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
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8.发明申请公开(公告)号：US20130264540A1
公开(公告)日：2013-10-10
申请号：US13909775
申请日：2013-06-04
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。
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9.发明申请TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES 有权用于生长和制造半透明（GA，AL，IN，B）N薄膜，异构体和器件的技术公开(公告)号：US20110062449A1
公开(公告)日：2011-03-17
申请号：US12953029
申请日：2010-11-23
申请人： Robert M. Farrell, JR. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, JR. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。
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10.发明授权Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices 有权用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术公开(公告)号：US07846757B2
公开(公告)日：2010-12-07
申请号：US11444946
申请日：2006-06-01
申请人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。
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