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14 条记录 (耗时 0.025 秒)

    Thin film magnetic head
    2.
    发明授权
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号：US06400537B2

    公开(公告)日：2002-06-04

    申请号：US09099683

    申请日：1998-06-18

    申请人： Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

    发明人： Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.

    摘要翻译： 薄膜磁头包括在上屏蔽部分和下屏蔽部分之间的上屏蔽部分，下屏蔽部分和磁阻装置部分。 磁阻器件部分通过导电层连接到上屏蔽部分和下屏蔽部分。 电流经由上屏蔽和下屏蔽流过磁阻器件部分。

    Magnetoresistive element and memory element
    6.
    发明授权
    Magnetoresistive element and memory element 失效
    磁阻元件和记忆元件

    公开(公告)号：US5691936A

    公开(公告)日：1997-11-25

    申请号：US702382

    申请日：1996-08-14

    申请人： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

    发明人： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

    IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/42 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/15

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11C11/14 ,  G11B2005/3996

    摘要： A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film to provide a window for excitation light is arranged on a substrate via a buffer layer. Another semiconductor film and a nonmagnetic metallic film (or a nonmagnetic insulating film) are arranged on the semiconductor film successively. A magnetic film having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film). An electrode is arranged beneath the substrate and another electrode is arranged on the magnetic film. By radiating a laser light beam to the semiconductor film acting as a window, electrons having spin polarization are excited in the semiconductor film so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.

    摘要翻译： 具有磁阻小的磁阻变化的磁阻效应元件以及使用其的存储元件。 用于提供激发光的窗口的半导体膜经由缓冲层布置在衬底上。 在半导体膜上依次配置另一半导体膜和非磁性金属膜（或非磁性绝缘膜）。 具有方形磁化曲线的磁性膜被布置在非磁性金属膜（或非磁性绝缘膜）上。 电极布置在基底下方，另一电极布置在磁膜上。 通过对作为窗口的半导体膜照射激光束，在半导体膜中激发具有自旋极化的电子，以利用磁性膜表面的电子散射对磁性的磁化取向的依赖性 电子和激发电子的自旋极化状态。

    Memory element
    7.
    发明授权
    Memory element 失效
    记忆元素

    公开(公告)号：US5459687A

    公开(公告)日：1995-10-17

    申请号：US144593

    申请日：1993-10-28

    申请人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Yousuke Irie

    发明人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Yousuke Irie

    IPC分类号： G11C11/15 ,  G11C11/14 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC分类号： G11C11/14

    摘要： A high performance thin film memory device uses an artificial lattice magnetoresistance effect film, and operable with a low magnetic field and room temperature; and the device has a magnetic film part M, current feed lines R and R' for generating magnetic field for information data writing-in, and an information data readout line S of an artificial lattice magnetoresistance film of a lamination structure of a metallic magnetic thin layers such as Ni--Fe--Co system and a metallic nonmagnetic thin layers such as Cu.

    摘要翻译： 高性能薄膜存储器件使用人造晶格磁阻效应膜，可在低磁场和室温下操作; 并且该器件具有磁膜部分M，用于产生用于信息数据写入的磁场的电流馈送线R和R'以及金属磁性薄片的层叠结构的人造晶格磁阻膜的信息数据读出线S 诸如Ni-Fe-Co系的层和诸如Cu的金属非磁性薄层。

    Magnetoresistance element, magnetoresistive head and magnetoresistive memory
    8.
    发明授权
    Magnetoresistance element, magnetoresistive head and magnetoresistive memory 失效
    磁阻元件，磁阻磁头和磁阻存储器

    公开(公告)号：US5715121A

    公开(公告)日：1998-02-03

    申请号：US768466

    申请日：1996-12-18

    申请人： Hiroshi Sakakima ,  Yousuke Irie

    发明人： Hiroshi Sakakima ,  Yousuke Irie

    IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/30 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  B32B7/02

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  H01F10/3254 ,  H01L43/08 ,  G11B2005/3996 ,  H01F10/3259 ,  Y10T428/1171 ,  Y10T428/2495

    摘要： A magnetoresistance element has a structure of a magnetic film 3, a nonmagnetic film 2 and a magnetic film 1 layered successively, and the nonmagnetic film is made of a mixture of electrical conductors and insulators. Then, magnetic coupling between the magnetic films 1 and 3 is reduced. Further, because it is possible to detect a magnetic field by supplying a current along a film plane, a large change in magnetoresistance is observed, or the sensitivity is high. Modified magnetoresistance elements are also described including a film 4 suppressing magnetization reversal or an interface magnetic film 5. A magnetic head for a hard disk is produced by adding a yoke to the magnetoresistance element. A memory device having a plurality of magnetoresistance elements is produced by adding word lines and the like thereto.

    摘要翻译： 磁阻元件具有依次分层的磁性膜3，非磁性膜2和磁性膜1的结构，非磁性膜由电导体和绝缘体的混合物构成。 然后，减小磁性膜1和3之间的磁耦合。 此外，由于可以通过沿着膜面提供电流来检测磁场，所以观察到磁阻的大的变化，或者灵敏度高。 还描述了改进的磁阻元件，其包括抑制磁化反转的膜4或界面磁性膜5.通过将磁轭附加到磁阻元件来产生用于硬盘的磁头。 具有多个磁阻元件的存储器件通过在其上添加字线等来产生。

    Washing method and washing device
    9.
    发明申请
    Washing method and washing device 失效
    洗涤方法和洗涤装置

    公开(公告)号：US20050199263A1

    公开(公告)日：2005-09-15

    申请号：US10514811

    申请日：2003-05-12

    申请人： Yousuke Irie ,  Kiyoyuki Morita ,  Masaaki Suzuki ,  Akihisa Adachi ,  Masahiko Hashimoto

    发明人： Yousuke Irie ,  Kiyoyuki Morita ,  Masaaki Suzuki ,  Akihisa Adachi ,  Masahiko Hashimoto

    IPC分类号： B08B3/00 ,  B08B3/02

    CPC分类号： B08B7/0021 ,  Y10S134/902

    摘要： A cleaning effect is improved by cleaning a component that has a recess structure by using a cleaning medium of a liquefied gas or a supercritical fluid. By the cleaning method of removing adhering substances adhering to at least the surface of the recess structure of the component that has the recess structure, cleaning is carried out by using the supercritical gas or the liquefied gas so that the cleaning medium spreads over the surface of the recess structure.

    摘要翻译： 通过使用液化气体或超临界流体的清洁介质清洗具有凹陷结构的部件来提高清洁效果。 通过除去附着于至少具有凹部结构的部件的凹部结构的表面的附着物质的清洗方法，通过使用超临界气体或液化气体进行清洗，使得清洗介质在 凹槽结构。

    Piezoelectric element, actuator, and inkjet head
    10.
    发明授权
    Piezoelectric element, actuator, and inkjet head 有权
    压电元件，执行器和喷墨头

    公开(公告)号：US06903491B2

    公开(公告)日：2005-06-07

    申请号：US10128115

    申请日：2002-04-23

    申请人： Yousuke Irie ,  Kazuo Yokoyama

    发明人： Yousuke Irie ,  Kazuo Yokoyama

    IPC分类号： B41J2/14 ,  H01L41/09 ,  H01L41/08

    CPC分类号： H01L41/0815 ,  B41J2002/14491 ,  H01L41/094 ,  H01L41/098

    摘要： A piezoelectric element includes: a piezoelectric film made of PZT; a pair of electrodes (a lower electrode and an upper electrode) arranged with the piezoelectric film being interposed therebetween; and a base film made of PLT having a thickness of about 50 nm to 200 nm and provided between the piezoelectric film and the lower electrode. The piezoelectric element, as a whole, is provided on a substrate, which may be a stainless steel substrate (polycrystalline), a heat-resistant glass substrate (amorphous), a silicon substrate (single crystal), etc. A piezoelectric element having a good piezoelectric characteristic can be provided on a substrate other than a single crystal substrate.

    摘要翻译： 压电元件包括​​：由PZT制成的压电膜; 配置有压电膜的一对电极（下电极和上电极）插入其间; 以及由厚度为50nm〜200nm的PLT制成的基底膜，设置在压电体膜和下部电极之间。 作为整体，压电元件设置在基板上，该基板可以是不锈钢基板（多晶），耐热玻璃基板（非晶体），硅基板（单晶）等。具有 可以在除了单晶衬底之外的衬底上提供良好的压电特性。