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14 条记录 (耗时 0.014 秒)

    Piezoelectric element, actuator, and inkjet head
    1.
    发明授权
    Piezoelectric element, actuator, and inkjet head 有权
    压电元件，执行器和喷墨头

    公开(公告)号：US06903491B2

    公开(公告)日：2005-06-07

    申请号：US10128115

    申请日：2002-04-23

    申请人： Yousuke Irie ,  Kazuo Yokoyama

    发明人： Yousuke Irie ,  Kazuo Yokoyama

    IPC分类号： B41J2/14 ,  H01L41/09 ,  H01L41/08

    CPC分类号： H01L41/0815 ,  B41J2002/14491 ,  H01L41/094 ,  H01L41/098

    摘要： A piezoelectric element includes: a piezoelectric film made of PZT; a pair of electrodes (a lower electrode and an upper electrode) arranged with the piezoelectric film being interposed therebetween; and a base film made of PLT having a thickness of about 50 nm to 200 nm and provided between the piezoelectric film and the lower electrode. The piezoelectric element, as a whole, is provided on a substrate, which may be a stainless steel substrate (polycrystalline), a heat-resistant glass substrate (amorphous), a silicon substrate (single crystal), etc. A piezoelectric element having a good piezoelectric characteristic can be provided on a substrate other than a single crystal substrate.

    摘要翻译： 压电元件包括​​：由PZT制成的压电膜; 配置有压电膜的一对电极（下电极和上电极）插入其间; 以及由厚度为50nm〜200nm的PLT制成的基底膜，设置在压电体膜和下部电极之间。 作为整体，压电元件设置在基板上，该基板可以是不锈钢基板（多晶），耐热玻璃基板（非晶体），硅基板（单晶）等。具有 可以在除了单晶衬底之外的衬底上提供良好的压电特性。

    Optical switch and production method therefor, information transmission device using it
    3.
    发明申请
    Optical switch and production method therefor, information transmission device using it 审中-公开
    光开关及其制作方法，信息传输装置使用它

    公开(公告)号：US20050094931A1

    公开(公告)日：2005-05-05

    申请号：US10501893

    申请日：2003-01-20

    申请人： Kazuo Yokoyama ,  Katsuhiko Asai ,  Yousuke Irie ,  Shinichiro Aoki ,  Kouji Nomura ,  Katsuya Morinaka

    发明人： Kazuo Yokoyama ,  Katsuhiko Asai ,  Yousuke Irie ,  Shinichiro Aoki ,  Kouji Nomura ,  Katsuya Morinaka

    IPC分类号： B81B3/00 ,  G02B6/35 ,  G02B26/08 ,  G02B6/26

    CPC分类号： G02B6/3578 ,  G02B6/352 ,  G02B6/3556 ,  G02B6/356 ,  G02B6/3566 ,  G02B26/0858

    摘要： On a substrate are configured piezoelectric elements composed of a mirror device, piezoelectric thin films, electrodes, and elastic members, and application of a voltage to the electrodes causes flexure deformation in the piezoelectric thin films, so that the mirror device is actuated. A plurality of the piezoelectric elements are arranged in parallel with a longitudinal direction thereof, and torsion springs are provided so as to extend in a direction orthogonal to the longitudinal direction and so as to hold the mirror device in connection with the substrate. The mirror device is connected to the piezoelectric elements through strain absorbers. In such a configuration, the torsion springs serve as a rotation axis, and the mirror device is inclined about the rotation axis.

    摘要翻译： 在基板上配置由反射镜装置，压电薄膜，电极和弹性部件构成的压电元件，并且向电极施加电压引起压电薄膜的弯曲变形，使得反射镜装置被致动。 多个压电元件与其长度方向平行地布置，并且扭转弹簧设置成在与纵向方向正交的方向上延伸，并且保持反射镜装置与基板连接。 镜装置通过应变吸收器连接到压电元件。 在这种构造中，扭转弹簧用作旋转轴，并且反射镜装置围绕旋转轴线倾斜。

    Actuator with piezoelectric member
    4.
    发明授权
    Actuator with piezoelectric member 有权
    带压电元件的致动器

    公开(公告)号：US06724580B2

    公开(公告)日：2004-04-20

    申请号：US09782261

    申请日：2001-02-13

    申请人： Yousuke Irie ,  Kazuo Yokoyama

    发明人： Yousuke Irie ,  Kazuo Yokoyama

    IPC分类号： G11B2110

    CPC分类号： G11B5/4806 ,  G11B21/106 ,  H01L41/094 ,  H01L41/0946 ,  H01L41/22 ,  H01L41/316

    摘要： An actuator of the present invention includes a shape maintaining sheet, a piezoelectric member provided integrally on the shape maintaining sheet, and a pair of electrodes formed to sandwich the piezoelectric member, wherein the shape maintaining sheet is formed of synthetic resin. Since the piezoelectric member is thin, the stiffness is increased by the shape maintaining sheet made of synthetic resin, and thus resonance frequency can be adjusted.

    摘要翻译： 本发明的致动器包括形状保持片，整形地设置在形状保持片上的压电元件和形成为夹持压电元件的一对电极，其中形状保持片由合成树脂形成。 由于压电元件较薄，刚性由合成树脂制成的保形片提高，因此可以调节共振频率。

    Washing method and washing device
    5.
    发明申请
    Washing method and washing device 失效
    洗涤方法和洗涤装置

    公开(公告)号：US20050199263A1

    公开(公告)日：2005-09-15

    申请号：US10514811

    申请日：2003-05-12

    申请人： Yousuke Irie ,  Kiyoyuki Morita ,  Masaaki Suzuki ,  Akihisa Adachi ,  Masahiko Hashimoto

    发明人： Yousuke Irie ,  Kiyoyuki Morita ,  Masaaki Suzuki ,  Akihisa Adachi ,  Masahiko Hashimoto

    IPC分类号： B08B3/00 ,  B08B3/02

    CPC分类号： B08B7/0021 ,  Y10S134/902

    摘要： A cleaning effect is improved by cleaning a component that has a recess structure by using a cleaning medium of a liquefied gas or a supercritical fluid. By the cleaning method of removing adhering substances adhering to at least the surface of the recess structure of the component that has the recess structure, cleaning is carried out by using the supercritical gas or the liquefied gas so that the cleaning medium spreads over the surface of the recess structure.

    摘要翻译： 通过使用液化气体或超临界流体的清洁介质清洗具有凹陷结构的部件来提高清洁效果。 通过除去附着于至少具有凹部结构的部件的凹部结构的表面的附着物质的清洗方法，通过使用超临界气体或液化气体进行清洗，使得清洗介质在 凹槽结构。

    Thin film magnetic head
    7.
    发明授权
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号：US06400537B2

    公开(公告)日：2002-06-04

    申请号：US09099683

    申请日：1998-06-18

    申请人： Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

    发明人： Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.

    摘要翻译： 薄膜磁头包括在上屏蔽部分和下屏蔽部分之间的上屏蔽部分，下屏蔽部分和磁阻装置部分。 磁阻器件部分通过导电层连接到上屏蔽部分和下屏蔽部分。 电流经由上屏蔽和下屏蔽流过磁阻器件部分。

    Magnetoresistive element and memory element
    9.
    发明授权
    Magnetoresistive element and memory element 失效
    磁阻元件和记忆元件

    公开(公告)号：US5691936A

    公开(公告)日：1997-11-25

    申请号：US702382

    申请日：1996-08-14

    申请人： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

    发明人： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

    IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/42 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/15

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11C11/14 ,  G11B2005/3996

    摘要： A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film to provide a window for excitation light is arranged on a substrate via a buffer layer. Another semiconductor film and a nonmagnetic metallic film (or a nonmagnetic insulating film) are arranged on the semiconductor film successively. A magnetic film having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film). An electrode is arranged beneath the substrate and another electrode is arranged on the magnetic film. By radiating a laser light beam to the semiconductor film acting as a window, electrons having spin polarization are excited in the semiconductor film so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.

    摘要翻译： 具有磁阻小的磁阻变化的磁阻效应元件以及使用其的存储元件。 用于提供激发光的窗口的半导体膜经由缓冲层布置在衬底上。 在半导体膜上依次配置另一半导体膜和非磁性金属膜（或非磁性绝缘膜）。 具有方形磁化曲线的磁性膜被布置在非磁性金属膜（或非磁性绝缘膜）上。 电极布置在基底下方，另一电极布置在磁膜上。 通过对作为窗口的半导体膜照射激光束，在半导体膜中激发具有自旋极化的电子，以利用磁性膜表面的电子散射对磁性的磁化取向的依赖性 电子和激发电子的自旋极化状态。

    Memory element
    10.
    发明授权
    Memory element 失效
    记忆元素

    公开(公告)号：US5459687A

    公开(公告)日：1995-10-17

    申请号：US144593

    申请日：1993-10-28

    申请人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Yousuke Irie

    发明人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Yousuke Irie

    IPC分类号： G11C11/15 ,  G11C11/14 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC分类号： G11C11/14

    摘要： A high performance thin film memory device uses an artificial lattice magnetoresistance effect film, and operable with a low magnetic field and room temperature; and the device has a magnetic film part M, current feed lines R and R' for generating magnetic field for information data writing-in, and an information data readout line S of an artificial lattice magnetoresistance film of a lamination structure of a metallic magnetic thin layers such as Ni--Fe--Co system and a metallic nonmagnetic thin layers such as Cu.

    摘要翻译： 高性能薄膜存储器件使用人造晶格磁阻效应膜，可在低磁场和室温下操作; 并且该器件具有磁膜部分M，用于产生用于信息数据写入的磁场的电流馈送线R和R'以及金属磁性薄片的层叠结构的人造晶格磁阻膜的信息数据读出线S 诸如Ni-Fe-Co系的层和诸如Cu的金属非磁性薄层。