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    Ferroelectric/high dielectric constant integrated circuit and method of fabricating same
    5.
    发明授权
    Ferroelectric/high dielectric constant integrated circuit and method of fabricating same 失效
    铁电/高介电常数集成电路及其制造方法

    公开(公告)号：US6051858A

    公开(公告)日：2000-04-18

    申请号：US892699

    申请日：1997-07-15

    申请人： Hiroto Uchida ,  Nobuyuki Soyama ,  Katsumi Ogi ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    发明人： Hiroto Uchida ,  Nobuyuki Soyama ,  Katsumi Ogi ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L27/11502 ,  H01L28/55

    摘要： A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.

    摘要翻译： 硅衬底上的晶体管被​​绝缘层覆盖。 导电插塞通过绝缘层到晶体管漏极。 直接覆盖插头和漏极的铁电电容器的底部电极接触插头。 铁电层是自我构图的，并且完全覆盖在存储单元上。 自图案牺牲层完全覆盖铁电层。 电容器的底部电极被铁电体层，绝缘层和导电插塞完全包围。 牺牲层包括：a）选自由钽，铪，钨，铌和锆组成的第一金属组的金属; 或b）金属化合物，其包含一种或多种金属，所述金属选自由钛，钽，铪，钨，铌和锆组成的第二组金属，所述金属由一种或多种金属组成，所述第三组金属由锶，钙，钡 ，铋，镉和铅，例如钽酸锶，氧化钽，铋铋铋钽酸锶，钛酸锶，锆酸锶，铌酸铌，氮化钽和氮氧化钽。

    Formation of thin-film patterns of a metal oxide
    6.
    发明授权
    Formation of thin-film patterns of a metal oxide 失效
    形成金属氧化物的薄膜图案

    公开(公告)号：US5630872A

    公开(公告)日：1997-05-20

    申请号：US570576

    申请日：1995-12-11

    申请人： Katsumi Ogi ,  Tadashi Yonezawa ,  Nobuyuki Soyama ,  Kensuke Kageyama

    发明人： Katsumi Ogi ,  Tadashi Yonezawa ,  Nobuyuki Soyama ,  Kensuke Kageyama

    IPC分类号： C03C17/25 ,  C23C18/14 ,  C23C26/00 ,  H01L21/314 ,  H01L21/316

    CPC分类号： C03C17/25 ,  C23C18/14 ,  C23C26/00 ,  H01L21/316 ,  H01L21/31691 ,  C03C2218/11 ,  C03C2218/328

    摘要： A composition for formation of thin-film patterns of a metal oxide which comprises a metal alkoxide and one or more nitro compounds selected from the group consisting of nitrobenzyl alcohol derivatives, nitrobenzaldehyde derivatives, nitrostyrol derivatives, nitroacetophenone derivatives, nitroanisole derivatives and nitrofuran derivatives. This composition is applied to a substrate which is then irradiated with light to perform patterning by utilizing the difference in solubility between the light-irradiated portion and the non-light-irradiated portion, attributed to the photodecomposition reaction of the irradiated portion. A photoreactive compound is added to a starting solution which contains an organic solvent and an organic metal compound, the solution is misted, and the resulting mist is deposited on a substrate while irradiating with light.

    摘要翻译： 用于形成金属氧化物的薄膜图案的组合物，其包含金属醇盐和一种或多种选自硝基苄醇衍生物，硝基苯甲醛衍生物，硝基苯乙烯衍生物，硝基苯乙酮衍生物，硝基苯甲醚衍生物和硝基呋喃衍生物的硝基化合物。 将该组合物施加到基材上，然后用光照射，由于照射部分的光分解反应，利用光照射部分和非光照射部分之间的溶解度差异来进行图案化。 向包含有机溶剂和有机金属化合物的起始溶液中加入光反应性化合物，使溶液发生雾化，并将所得雾沉积在基板上同时照射光。

    Method for forming a pattern of non-volatile ferroelectric thin film memory
    8.
    发明授权
    Method for forming a pattern of non-volatile ferroelectric thin film memory 失效
    用于形成非挥发性铁电薄膜存储器的图案的方法

    公开(公告)号：US5605723A

    公开(公告)日：1997-02-25

    申请号：US434312

    申请日：1995-05-02

    申请人： Katsumi Ogi ,  Tsutomu Atsuki ,  Hiroto Uchida ,  Tadashi Yonezawa ,  Nobuyuki Soyama

    发明人： Katsumi Ogi ,  Tsutomu Atsuki ,  Hiroto Uchida ,  Tadashi Yonezawa ,  Nobuyuki Soyama

    IPC分类号： H01L27/10 ,  G03F7/004 ,  H01L27/115 ,  B05D3/06 ,  B05D3/02 ,  C23C18/00 ,  H05H1/00

    CPC分类号： H01L27/11502 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0047 ,  Y10S430/168

    摘要： A pattern of a non-volatile high-performance ferroelectric thin film memory is formed by applying a composition containing hydrolytic metal compounds, and a photosensitizer which generates water when irradiated with active rays onto a substrate. The resultant film is exposed to active rays in compliance with a prescribed pattern to form an image and developed with a solvent to remove non-exposed portions, and then the remaining exposed portions are subjected to a heat treatment to convert the exposed portions into a dielectric substance comprising a metal oxide as expressed by the following formula (I):(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m O.sub.3m+1).sup.2-(I)where A is one or more elements selected from the group consisting of Ba, Sr, Pb and Bi; B is one or more elements selected from the group consisting of Ti, Nb and Ta; and m is an integer of from 2 to 5.

    摘要翻译： 通过施加含有水解金属化合物的组合物和在活性光线照射到基材上时产生水的光敏剂，形成非挥发性高性能铁电薄膜存储器的图案。 所得的膜根据规定的图案暴露于活性射线以形成图像并用溶剂显影以除去未曝光的部分，然后对剩余的暴露部分进行热处理，以将暴露部分转化为电介质 包含如下式（I）所示的金属氧化物的物质：（Bi 2 O 2）2+（Am-1BmO 3 m + 1）2-（I）其中A是选自Ba，Sr，Pb中的一种或多种元素 和Bi B是选自Ti，Nb和Ta中的一种或多种元素; m为2〜5的整数。

    Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern
    10.
    发明授权
    Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern 失效
    用于形成金属氧化物薄膜图案的组合物和用于形成金属氧化物薄膜图案的方法

    公开(公告)号：US5637440A

    公开(公告)日：1997-06-10

    申请号：US361837

    申请日：1994-12-22

    申请人： Katsumi Ogi ,  Tsutomu Atsuki ,  Go Sasaki ,  Tadashi Yonezawa ,  Nobuyuki Soyama

    发明人： Katsumi Ogi ,  Tsutomu Atsuki ,  Go Sasaki ,  Tadashi Yonezawa ,  Nobuyuki Soyama

    IPC分类号： G03F7/004 ,  G03C1/492 ,  G03C1/494 ,  G03C1/76

    CPC分类号： G03F7/0042 ,  G03F7/004 ,  G03F7/0047 ,  Y10S430/12 ,  Y10S430/122

    摘要： A composition for forming a metal oxide thin film pattern which is a solution containing one or more hydrolytic metal compounds selected from the group consisting of hydrolytic organometallic compounds (e.g., metal alkoxide) and metal halides, and a water generating agent which frees water under the effect of irradiation with active rays (e.g., o-nitrobenzyl alcohol and 2-nitroethanol) and, as required, an acid generating agent which frees acid under the effect of irradiation with active rays is disclosed. A thin film pattern is formed by coating the composition onto a substrate, irradiating active rays for forming an image on the resultant photosensitive coating film, developing the same with water or an alcoholic solvent to remove the non-exposed portion, and heat-treating the substrate to convert the remaining film into a metal oxide, thereby forming a negative-type metal oxide thin film pattern.

    摘要翻译： 用于形成金属氧化物薄膜图案的组合物，其是含有一种或多种选自水解有机金属化合物（例如金属醇盐）和金属卤化物的水解金属化合物的溶液，以及将水 公开了用活性射线照射的效果（例如邻硝基苄醇和2-硝基乙醇）和根据需要的在活性射线照射下释放酸的酸产生剂。 通过将组合物涂布在基材上，照射用于在所得感光性涂膜上形成图像的活性射线，用水或醇溶剂进行显影以除去未曝光部分，并对其进行热处理，形成薄膜图案 将剩余的膜转换为金属氧化物，从而形成负型金属氧化物薄膜图案。