Abstract:
A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.
Abstract:
Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.
Abstract:
Embedded air core inductors are described for integrated circuit package substrates. The substrates have a thermal conductor for the inductors. One example includes a package substrate to carry an integrated circuit die, the package substrate having a plurality of top side pads to connect to the die on a top side and a plurality of bottom side pads to connect to an external component on a bottom side. An inductor is embedded within the package substrate, A thermal conductor is embedded within the package substrate adjacent to the inductor to conduct heat away from the inductor, and a heat sink is thermally coupled to the thermal conductor to receive the heat from the conductor.
Abstract:
A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.
Abstract:
A semiconductor device that has a semiconductor die coupled to a substrate. A mold compound encapsulates the semiconductor die, and at least one thermal conductive material section extends from adjacent the semiconductor die through the mold compound. The at least one conductive material section thus conveys heat from the semiconductor die through the mold compound.
Abstract:
Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.
Abstract:
An apparatus incorporating a multi-surface heat sink may comprise an integrated circuit die, a heat spreader, a plate element, and a heat sink. The heat spreader may be positioned above the IC die. The plate element may be positioned above the heat spreader. A bottom surface of the heat sink may have a first region positioned above the plate element. One or more spring elements may be positioned between the plate element and the first region of the bottom surface of the heat sink. The one or more spring elements may be under a compressive load between the plate element and the heat sink. One or more thermal conduit elements may be secured to both the plate element and the heat sink. The one or more thermal conduit elements may apply at least a part of the compressive load between the plate element and the heat sink.
Abstract:
An apparatus incorporating a multi-surface heat sink may comprise an integrated circuit die, a heat spreader, a plate element, and a heat sink. The heat spreader may be positioned above the IC die. The plate element may be positioned above the heat spreader. A bottom surface of the heat sink may have a first region positioned above the plate element. One or more spring elements may be positioned between the plate element and the first region of the bottom surface of the heat sink. The one or more spring elements may be under a compressive load between the plate element and the heat sink. One or more thermal conduit elements may be secured to both the plate element and the heat sink. The one or more thermal conduit elements may apply at least a part of the compressive load between the plate element and the heat sink.
Abstract:
Disclosed herein are embodiments of sintered heat spreaders with inserts and related devices and methods. In some embodiments, a heat spreader may include: a frame including aluminum and a polymer binder; an insert disposed in the frame, wherein the insert has a thermal conductivity higher than a thermal conductivity of the frame; and a recess having at least one sidewall formed by the frame. The polymer binder may be left over from sintering frame material and insert material to form the heat spreader.