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    CMOS protection during germanium photodetector processing
    5.
    发明授权
    CMOS protection during germanium photodetector processing 有权
    锗光电探测器处理期间的CMOS保护

    公开(公告)号：US09590001B2

    公开(公告)日：2017-03-07

    申请号：US14732835

    申请日：2015-06-08

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Solomon Assefa ,  Marwan H. Khater ,  Edward W. Kiewra ,  Carol Reinholm ,  Steven M. Shank

    IPC: H01L27/146 ,  H01L27/144 ,  H01L31/028

    CPC classification number: H01L27/14607 ,  H01L27/1443 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028

    Abstract: A method of protecting a CMOS device within an integrated photonic semiconductor structure is provided. The method may include depositing a conformal layer of germanium over the CMOS device and an adjacent area to the CMOS device, depositing a conformal layer of dielectric hardmask over the germanium, and forming, using a mask level, a patterned layer of photoresist for covering the CMOS device and a photonic device formation region within the adjacent area. Openings are etched into areas of the deposited layer of silicon nitride not covered by the patterned photoresist, such that the areas are adjacent to the photonic device formation region. The germanium material is then etched from the conformal layer of germanium at a location underlying the etched openings for forming the photonic device at the photonic device formation region. The conformal layer of germanium deposited over the CMOS device protects the CMOS device.

    Abstract translation: 提供了保护集成光子半导体结构内的CMOS器件的方法。 该方法可以包括在CMOS器件上沉积锗的保形层和与CMOS器件相邻的区域，在锗上沉积介电硬掩模的保形层，以及使用掩模级形成图案化的光致抗蚀剂层，以覆盖 CMOS器件和邻近区域内的光子器件形成区域。 将开口蚀刻到未被图案化光致抗蚀剂覆盖的氮化硅的沉积层的区域中，使得该区域与光子器件形成区域相邻。 然后在锗的共形层上蚀刻锗材料，其位于蚀刻开口下方的位置处，以在光子器件形成区域处形成光子器件。 沉积在CMOS器件上的锗的保形层保护CMOS器件。

    Photonics device and CMOS device having a common gate
    8.
    发明授权
    Photonics device and CMOS device having a common gate 有权
    具有公共栅极的光子器件和CMOS器件

    公开(公告)号：US09059025B2

    公开(公告)日：2015-06-16

    申请号：US14015493

    申请日：2013-08-30

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  William M. J. Green ,  Steven M. Shank ,  Yurii A. Vlasov

    IPC: H01L27/092 ,  H01L27/14 ,  H01L31/18 ,  H01L21/84 ,  H01L21/8234 ,  H01L27/06 ,  H01L21/28

    CPC classification number: H01L27/0922 ,  H01L21/28255 ,  H01L21/823437 ,  H01L21/84 ,  H01L27/0617 ,  H01L27/14 ,  H01L31/18 ,  H01L31/1808 ,  Y02E10/50

    Abstract: A semiconductor chip having a photonics device and a CMOS device which includes a photonics device portion and a CMOS device portion on a semiconductor chip; a metal or polysilicon gate on the CMOS device portion, the metal or polysilicon gate having a gate extension that extends toward the photonics device portion; a germanium gate on the photonics device portion such that the germanium gate is coplanar with the metal or polysilicon gate, the germanium gate having a gate extension that extends toward the CMOS device portion, the germanium gate extension and metal or polysilicon gate extension joined together to form a common gate; spacers formed on the germanium gate and the metal or polysilicon gate; and nitride encapsulation formed on the germanium gate.

    Abstract translation: 一种具有光子器件和CMOS器件的半导体芯片，其包括半导体芯片上的光子器件部分和CMOS器件部分; 在CMOS器件部分上的金属或多晶硅栅极，金属或多晶硅栅极具有朝向光子器件部分延伸的栅极延伸; 在光子器件部分上的锗栅极，使得锗栅极与金属或多晶硅栅极共面，锗栅极具有朝向CMOS器件部分延伸的栅极延伸，锗栅极延伸和金属或多晶硅栅极延伸部连接到一起 形成共同门; 在锗栅极和金属或多晶硅栅极上形成的间隔物; 并且在锗栅上形成氮化物封装。

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