公开(公告)号：US09716066B2

公开(公告)日：2017-07-25

申请号：US14779022

申请日：2013-06-29

Applicant: Intel Corporation

Inventor： Kevin J. Lee ,  James Y. Jeong ,  Hsiao-Kang Chang ,  John Muirhead ,  Adwait Telang ,  Puneesh Puri ,  Jiho Kang ,  Nitin M. Patel

IPC: H01L23/538 ,  H01L21/768 ,  H01L23/48 ,  H01L23/31 ,  H01L23/00 ,  H01L21/683

CPC classification number: H01L23/5384 ,  H01L21/6835 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/564 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/03823 ,  H01L2224/03825 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/116 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/16145 ,  H01L2924/13091 ,  H01L2924/381 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/01073 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014

Abstract: A 3D interconnect structure and method of manufacture are described in which metal redistribution layers (RDLs) are integrated with through-silicon vias (TSVs) and using a “plate through resist” type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and polish stop layer during the process flow.

公开(公告)号：US09748180B2

公开(公告)日：2017-08-29

申请号：US15124820

申请日：2014-07-08

Applicant: INTEL CORPORATION

Inventor： Puneesh Puri ,  Jiho Kang ,  James Y. Jeong

IPC: H01L29/00 ,  H01L23/00 ,  H01L21/762 ,  H01L29/06 ,  H01L23/48 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/562 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76897 ,  H01L23/481 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/05 ,  H01L29/0649 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/0557 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques are disclosed for through-body via liner structures and processes of forming such liner structures in an integrated circuit. In an embodiment, an integrated circuit includes a silicon semiconductor substrate having one or more through-silicon vias (TSVs), although other through-body vias can be used as will be appreciated in light of this disclosure. Each TSV extends through at least a portion of the substrate, for example, from one side (e.g., top) of the substrate to the opposite side of the substrate (e.g., bottom), or from one internal layer of the substrate to another internal layer. A liner is disposed between the substrate and each TSV. The liner is formed of multiple alternating layers of dissimilar insulation films (e.g., tensile films and compressive films) sandwiched together.

公开(公告)号：US20160049371A1

公开(公告)日：2016-02-18

申请号：US14779022

申请日：2013-06-29

Applicant: INTEL CORPORATION

Inventor： Kevin J. Lee ,  James Y. Jeong ,  Hsiao-Kang Chang ,  John Muirhead ,  Adwait Telang ,  Puneesh Puri ,  Jiho Kang ,  Nitin M. Patel

IPC: H01L23/538 ,  H01L21/768 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/5384 ,  H01L21/6835 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/564 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/03823 ,  H01L2224/03825 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/116 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/16145 ,  H01L2924/13091 ,  H01L2924/381 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/01073 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014

Abstract: A 3D interconnect structure and method of manufacture are described in which metal redistribution layers (RDLs) are integrated with through-silicon vias (TSVs) and using a “plate through resist” type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and polish stop layer during the process flow.

Abstract translation: 描述了三维互连结构和制造方法，其中金属再分布层（RDL）与硅通孔（TSV）集成并且使用“平板通过抗蚀剂”型工艺流程。 氮化硅或碳化硅钝化层可以设置在薄化的器件晶片背面和RDL之间，以在工艺流程期间提供密封屏障和抛光停止层。