METHODS FOR CMOS-MEMS INTEGRATED DEVICES WITH MULTIPLE SEALED CAVITIES MAINTAINED AT VARIOUS PRESSURES

    公开(公告)号:US20200109045A1

    公开(公告)日:2020-04-09

    申请号:US16698535

    申请日:2019-11-27

    Abstract: A Microelectromechanical systems (MEMS) structure comprises a MEMS wafer. A MEMS wafer includes a handle wafer with cavities bonded to a device wafer through a dielectric layer disposed between the handle and device wafers. The MEMS wafer also includes a moveable portion of the device wafer suspended over a cavity in the handle wafer. Four methods are described to create two or more enclosures having multiple gas pressure or compositions on a single substrate including, each enclosure containing a moveable portion. The methods include: A. Forming a secondary sealed enclosure, B. Creating multiple ambient enclosures during wafer bonding, C. Creating and breaching an internal gas reservoir, and D. Forming and subsequently sealing a controlled leak/breach into the enclosure.

    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS
    2.
    发明申请
    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS 有权
    用于射频和低电阻应用的MEMS器件和工艺

    公开(公告)号:US20160031702A1

    公开(公告)日:2016-02-04

    申请号:US14800604

    申请日:2015-07-15

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Abstract translation: 公开了用于低电阻应用的MEMS器件。 在第一方面,MEMS器件包括MEMS晶片,其包括具有包含第一表面和第二表面的一个或多个腔的手柄晶片和沉积在手柄晶片的第二表面上的绝缘层。 MEMS器件还包括具有第三和第四表面的器件层,第三表面结合到处理晶片的第二表面的绝缘层; 和在第四表面上的金属导电层。 MEMS器件还包括结合到MEMS晶片的CMOS晶片。 CMOS晶片包括至少一个金属电极,使得在至少一个金属电极和金属导电层的至少一部分之间形成电连接。

    DIFFERENTIAL SENSING ACOUSTIC SENSOR
    3.
    发明申请
    DIFFERENTIAL SENSING ACOUSTIC SENSOR 有权
    差分感应声学传感器

    公开(公告)号:US20150266723A1

    公开(公告)日:2015-09-24

    申请号:US14218561

    申请日:2014-03-18

    Abstract: A MEMS device includes a first plate coupled to a second plate and a fixed third plate formed on a first substrate. The first and second plates are displaced in the presence of an acoustic pressure differential across the surfaces of the first plate. The MEMS device also includes a first electrode formed on the third plate and a second electrode formed on the second substrate. The first, second plate, and third plates are contained in an enclosure formed by a first and second substrates. The device includes an acoustic port to expose the first plate to the environment. The MEMS device also includes a first gap formed between the second and third plates and a second gap formed between the second plate and the second electrode. The displacement of the second plate causes the first gap to change inversely to the second gap.

    Abstract translation: MEMS器件包括耦合到第二板的第一板和形成在第一衬底上的固定的第三板。 在第一板的表面上存在声压差的情况下,第一和第二板被移位。 MEMS器件还包括形成在第三板上的第一电极和形成在第二衬底上的第二电极。 第一,第二板和第三板被包含在由第一和第二基板形成的外壳中。 该装置包括用于将第一板暴露于环境的声学端口。 MEMS器件还包括形成在第二和第三板之间的第一间隙和形成在第二板和第二电极之间的第二间隙。 第二板的位移导致第一间隙与第二间隙成反比变化。

    MEMS ACOUSTIC SENSOR WITH INTEGRATED BACK CAVITY
    4.
    发明申请
    MEMS ACOUSTIC SENSOR WITH INTEGRATED BACK CAVITY 有权
    具有集成背腔的MEMS声学传感器

    公开(公告)号:US20140264656A1

    公开(公告)日:2014-09-18

    申请号:US14174639

    申请日:2014-02-06

    Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.

    Abstract translation: 公开了MEMS器件。 MEMS器件包括具有第一表面和第二表面的第一板; 以及附接到第一基板的锚。 MEMS器件还包括具有附接到第一板的第三表面和第四表面的第二板。 连杆将锚固件连接到第一板,其中第一板和第二板在第一板的第一和第二表面之间存在声压差的情况下移位。 第一板,第二板,连杆和锚固件都包含在由第一基板和第二基板形成的外壳中,其中第一和第二基板中的一个包含通孔,以将第一板的第一表面暴露于 环境。

    SURFACE ROUGHENING TO REDUCE ADHESION IN AN INTEGRATED MEMS DEVICE
    5.
    发明申请
    SURFACE ROUGHENING TO REDUCE ADHESION IN AN INTEGRATED MEMS DEVICE 审中-公开
    表面粗糙化以减少集成MEMS器件中的粘合

    公开(公告)号:US20140264655A1

    公开(公告)日:2014-09-18

    申请号:US14061152

    申请日:2013-10-23

    CPC classification number: B81B3/001 B81C2201/115

    Abstract: In an integrated MEMS device, moving silicon parts with smooth surfaces can stick together if they come into contact. By roughening at least one smooth surface, the effective area of contact, and therefore surface adhesion energy, is reduced and hence the sticking force is reduced. The roughening of a surface can be provided by etching the smooth surfaces in gas, plasma, or liquid with locally non-uniform etch rate. Various etch chemistries and conditions lead to various surface roughness.

    Abstract translation: 在集成的MEMS器件中,移动具有光滑表面的硅部件如果接触则可以粘在一起。 通过使至少一个光滑表面粗糙化,有效的接触面积以及因此的表面附着能减少,因此粘附力降低。 可以通过以局部不均匀蚀刻速率蚀刻气体,等离子体或液体中的光滑表面来提供表面的粗糙化。 各种蚀刻化学和条件导致各种表面粗糙度。

    CAVITY PRESSURE MODIFICATION USING LOCAL HEATING WITH A LASER

    公开(公告)号:US20170096330A1

    公开(公告)日:2017-04-06

    申请号:US15383755

    申请日:2016-12-19

    Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

    MEMS DEVICE WITH ELECTRODES PERMEABLE TO OUTGASSING SPECIES
    8.
    发明申请
    MEMS DEVICE WITH ELECTRODES PERMEABLE TO OUTGASSING SPECIES 有权
    带有电极的MEMS器件可以通过出口物种进行

    公开(公告)号:US20160376143A1

    公开(公告)日:2016-12-29

    申请号:US14935296

    申请日:2015-11-06

    Abstract: A MEMS device and method for providing a MEMS device are disclosed. In a first aspect, the MEMS device comprises a first substrate and a second substrate coupled to the first substrate forming a sealed enclosure. A moveable structure is located within the sealed enclosure. An outgassing layer is formed on the first or second substrates and within the sealed enclosure. A first conductive layer is disposed between the moveable structure and the outgassing layer, wherein the first conductive layer allows outgassing species to pass therethrough.

    Abstract translation: 公开了一种用于提供MEMS器件的MEMS器件和方法。 在第一方面,MEMS装置包括第一基板和耦合到第一基板的第二基板,形成密封外壳。 可移动的结构位于密封的外壳内。 在第一或第二基板上和密封的外壳内形成除气层。 第一导电层设置在可移动结构和除气层之间,其中第一导电层允许除气物质通过其中。

    INTEGRATED HEATER FOR GETTERING OR OUTGASSING ACTIVATION
    9.
    发明申请
    INTEGRATED HEATER FOR GETTERING OR OUTGASSING ACTIVATION 有权
    集成加热器,用于进入或启动激活

    公开(公告)号:US20150158720A1

    公开(公告)日:2015-06-11

    申请号:US14598138

    申请日:2015-01-15

    Inventor: Martin LIM

    CPC classification number: B81C1/00285 B81B7/02 B81B2201/0235 B81B2201/0242

    Abstract: A Microelectromechanical Systems (MEMS) structure with integrated heater is disclosed. The MEMS structure with integrated heater comprises a first substrate with cavities, bonded to a second substrate, forming a plurality of sealed enclosures of at least two types. Each of the plurality of sealed enclosures is defined by the first substrate, the second substrate, and a seal-ring material, where the first enclosure type further includes at least one of a gettering element to decrease cavity pressure in the first enclosure type and an outgassing element to increase cavity pressure in the first enclosure type when activated. The first enclosure type further comprises at least one heater integrated into the first substrate adjacent to the gettering element or the outgassing element to adjust the temperature of the gettering element or the outgassing element thereby providing heating to the gettering element or the outgassing element.

    Abstract translation: 公开了一种具有集成加热器的微机电系统(MEMS)结构。 具有集成加热器的MEMS结构包括具有空腔的第一衬底,其结合到第二衬底,形成至少两种类型的多个密封外壳。 多个密封外壳中的每一个由第一基板,第二基板和密封环材料限定,其中第一外壳类型还包括吸气元件中的至少一个以减小第一外壳类型中的空腔压力, 除气元件,以在第一外壳类型中激活时增加空腔压力。 第一外壳类型还包括与吸气元件或除气元件相邻的集成到第一衬底中的至少一个加热器,以调节吸气元件或除气元件的温度,从而为吸气元件或除气元件提供加热。

    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS
    10.
    发明申请
    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS 有权
    用于射频和低电阻应用的MEMS器件和工艺

    公开(公告)号:US20140145244A1

    公开(公告)日:2014-05-29

    申请号:US13687304

    申请日:2012-11-28

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Abstract translation: 公开了用于低电阻应用的MEMS器件。 在第一方面,MEMS器件包括MEMS晶片,其包括具有包含第一表面和第二表面的一个或多个腔的手柄晶片和沉积在手柄晶片的第二表面上的绝缘层。 MEMS器件还包括具有第三和第四表面的器件层,第三表面结合到处理晶片的第二表面的绝缘层; 和在第四表面上的金属导电层。 MEMS器件还包括结合到MEMS晶片的CMOS晶片。 CMOS晶片包括至少一个金属电极,使得在至少一个金属电极和金属导电层的至少一部分之间形成电连接。

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