利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.026 秒)

    Method of manufacturing a silicon on insulator semiconductor
    4.
    发明授权
    Method of manufacturing a silicon on insulator semiconductor 失效
    硅绝缘子半导体制造方法

    公开(公告)号：US5028558A

    公开(公告)日：1991-07-02

    申请号：US336170

    申请日：1989-04-11

    申请人： Jan Haisma ,  Cornelis L. Adema ,  Johan G. De Bruin ,  Theodorus M. Michielsen ,  Gijsbertus A. C. M. Spierings

    发明人： Jan Haisma ,  Cornelis L. Adema ,  Johan G. De Bruin ,  Theodorus M. Michielsen ,  Gijsbertus A. C. M. Spierings

    IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L21/18 ,  H01L21/20 ,  H01L21/304 ,  H01L27/12

    CPC分类号： H01L21/187 ,  H01L21/2007 ,  H01L21/304 ,  Y10S148/012

    摘要： A method of manufacturing a silicon-on-insulator semiconductor body is characterized by the steps consisting in that a carrier body is temporarily connected to a supporting body with accurately flat and parallel major surfaces and having a thickness of at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body and the other major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness and a parallelism between the major surfaces of at least 1/2 .mu.m whereupon a semiconductor body is connected through a major surface permanently to a major surface of the carrier body, in that then the semiconductor body is mechanically ground to a thickness of at least 50 .mu.m larger than the desired ultimate layer thickness and is then alternately polished tribochemically and mechanically to a thickness of about 10 .mu.m larger than the ultimately desired layer thickness, and in that there is ultimately polished tribochemically until the desired layer thickness of the semiconductor body is attained.

    Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
    9.
    发明授权
    Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method 失效
    在平坦基板表面上提供固化的光致抗蚀剂的图案化浮雕的方法和用于执行这种方法的装置

    公开(公告)号：US5425848A

    公开(公告)日：1995-06-20

    申请号：US214888

    申请日：1994-03-15

    申请人： Jan Haisma ,  Martinus Verheijen ,  Johannes T. Schrama

    发明人： Jan Haisma ,  Martinus Verheijen ,  Johannes T. Schrama

    IPC分类号： G02B5/20 ,  B29C35/08 ,  B29C35/10 ,  B29C39/14 ,  G03F7/20 ,  G09F3/02 ,  H01L21/027 ,  B44C1/22 ,  B29C37/00

    CPC分类号： B29C43/003 ,  B29C35/0888 ,  B29C35/10 ,  B29C39/148 ,  G03F7/2012 ,  B29C2035/0827 ,  B29C2043/025

    摘要： A description is given of a method and a device (1) for providing (replicating) a patterned resyntetic resin relief (37) on the surface (25) of a glass substrate (27). For this purpose, a UV-curable acrylate lacquer (33) is applied to the surface (25), after which a transparent mould (3) having a relief (13) is rolled-off over the surface (25). By means of a UV light source (17) and an elliptic mirror (21), the lacquer is cured at the location of the focal line (23), thereby forming said relief (37). The relief (13) of the mould (3) is replicated on the glass substrate (27). The method described enables a relief of small dimensions (10.times.10 .mu.m) to be seamlessly provided on a large fiat surface (1.times.1 m), without being hindered by large release forces.

    摘要翻译： 给出了在玻璃基板（27）的表面（25）上提供（复制）图案化再生树脂浮雕（37）的方法和装置（1）的描述。 为此，将UV可固化的丙烯酸酯漆（33）施加到表面（25）上，之后在表面（25）上滚动具有浮雕（13）的透明模具（3）。 通过UV光源（17）和椭圆镜（21），在焦线（23）的位置处固化漆，从而形成所述浮雕（37）。 模具（3）的浮雕（13）被复制在玻璃基板（27）上。 所描述的方法使得可以在大的平坦表面（1x1m）上无缝地提供小尺寸（10x10μm）的浮雕，而不受大的释放力的阻碍。

    Mixed crystals of doped rare earth gallium garnet
    10.
    发明授权
    Mixed crystals of doped rare earth gallium garnet 失效
    掺杂稀土镓石榴石的混晶

    公开(公告)号：US5302559A

    公开(公告)日：1994-04-12

    申请号：US896489

    申请日：1992-06-02

    申请人： Dieter Mateika ,  Erich Volkel ,  Jan Haisma

    发明人： Dieter Mateika ,  Erich Volkel ,  Jan Haisma

    IPC分类号： C30B15/00 ,  C04B35/60 ,  C04B35/00

    CPC分类号： C30B15/00 ,  C30B29/28

    摘要： A method of growing mixed crystals having at least two lattice sites each having a different number of adjacent oxygen ions from melts of oxidic multi-component systems, homogeneous mixed crystals being grown such that the cations intended to occupy the first lattice site having the highest number of adjacent oxygen ions and to occupy the second lattice site having the next lowest number of adjacent oxygen ions are chosen such that the ratio of the bond length of the cations in the first lattice site to the bond length of the cations in the second lattice site is in the range from 0.7 to 1.5.

    摘要翻译： 生长混合晶体的方法，其具有至少两个晶格点，每个具有不同数量的相邻氧离子与氧化多组分系统的熔融，生长均匀的混合晶体，使得预期占据具有最高数目的第一晶格位点的阳离子 的相邻氧离子并且占据具有次最低数量的相邻氧离子的第二晶格位点，使得第一晶格位点中的阳离子的键长与第二晶格位点中的阳离子的键长的比例 在0.7至1.5的范围内。