摘要:
A method generating program data to be stored in a nonvolatile memory device comprises randomizing the program data, and processing the randomized program data to reduce a frequency of at least one data state among the randomized program data.
摘要:
In a memory system, a memory controller includes a randomizer and a seed controller. The seed controller provides a seed to the randomizer and includes; a first register block performing a first cyclic shift operation using a first parameter related to the nonvolatile memory device, a second register block performing a second cyclic shift operation using a second parameter related to the nonvolatile memory device, and a seed generating block generating the seed from the first and second cyclic shift results.
摘要:
A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.
摘要:
A method of operating a memory system including a nonvolatile memory including a memory block, and a memory controller including an erase control unit, includes performing pre-reading a plurality of memory cells connected to a selected word line of the memory block, generating an off cell count based on the pre-reading result, by operation of the erase control unit, comparing the off cell count with a reference value to generate a comparison result, and changing an erase operation condition based on the comparison result, by operation of the nonvolatile memory, and erasing the memory block according to the changed erase operation condition.
摘要:
A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation.
摘要:
A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.
摘要:
The operating method of the storage device includes receiving write data to be written at the plurality of memory cells; determining whether the received write data is LSB data to be written at the plurality of memory cells; and encoding the write data according to the determination. The write data is encoded according to the write data when the write data is LSB data to be written at the plurality of memory cells. The write data is encoded according to the write data and encoding data of lower data of the write data to be written at the plurality of memory cells when the write data is not LSB data to be written at the plurality of memory cells.
摘要:
A method of operating a nonvolatile memory device configured to erase a memory block in sub-block units comprises detecting state information of unselected sub-blocks associated with a selected sub-block comprising selected memory cells, adjusting a read bias of the selected memory cells based on the state information, and reading data from the selected memory cells according to the adjusted read bias. The state information indicates a number of the unselected sub-blocks having a programmed state or an erased state.
摘要:
A data management method of a nonvolatile memory device which includes a data cell area and a reference cell area includes selecting shared data from write data input to the memory device; generating reference data based on the shared data; and storing the write data in the data cell area and a first reference area of the reference cell area; and storing the reference data in a second reference area of the reference cell area.
摘要:
A method may be provided to detect and correct data errors in a data system where a data message has been encoded with outer parity bits based on the data message using an outer encoding technique to provide an outer codeword and with inner parity bits based on the outer codeword using an inner encoding technique different than the outer encoding technique to provide an inner codeword. The method may include using the inner parity bits and an inner decoding technique corresponding to the inner encoding technique to perform inner decoding of the inner codeword. Responsive to performing inner decoding of the inner codeword without error, the data message may be extracted from a result of inner decoding the inner codeword without using the outer parity bits to decode the result of inner decoding the inner codeword. Related systems are also discussed.