公开(公告)号：US10943838B2

公开(公告)日：2021-03-09

申请号：US16072657

申请日：2018-06-24

Applicant: KLA-TENCOR CORPORATION

Inventor： Choon Hoong Hoo ,  Fangren Ji ,  Amnon Manassen ,  Liran Yerushalmi ,  Antonio Mani ,  Allen Park ,  Stilian Pandev ,  Andrei Shchegrov ,  Jon Madsen

IPC: H01L21/00 ,  H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  G06T7/00 ,  G03F7/20 ,  G06F30/39 ,  G06F119/18

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

公开(公告)号：US09934353B2

公开(公告)日：2018-04-03

申请号：US14974732

申请日：2015-12-18

Applicant: KLA-Tencor Corporation

Inventor： Mohamed El Kodadi ,  Nuriel Amir ,  Roie Volkovich ,  Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel ,  Nadav Gutman ,  Stilian Pandev ,  Dzimtry Sanko

IPC: G06F17/50 ,  G03F7/20 ,  G01N21/47

CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

公开(公告)号：US09569834B2

公开(公告)日：2017-02-14

申请号：US14746820

申请日：2015-06-22

Applicant: KLA-TENCOR CORPORATION

Inventor： Himanshu Vajaria ,  Shabnam Ghadar ,  Tommaso Torelli ,  Bradley Ries ,  Mohan Mahadevan ,  Stilian Pandev

IPC: G06K9/00 ,  G06T7/00

CPC classification number: G06T7/11 ,  G06T7/001 ,  G06T2207/30148

Abstract: Methods and devices are disclosed for automated detection of a status of wafer fabrication process based on images. The methods advantageously use segment masks to enhance the signal-to-noise ratio of the images. Metrics are then calculated for the segment mask variations in order to determine one or more combinations of segment masks and metrics that are predictive of a process non-compliance. A model can be generated as a result of the process. In another embodiment, a method uses a model to monitor a process for compliance.

Abstract translation: 公开了用于基于图像自动检测晶片制造过程的状态的方法和装置。 这些方法有利地使用段掩模来增强图像的信噪比。 然后针对段掩码变化计算度量，以便确定预测过程不合规性的段掩码和度量的一个或多个组合。 作为过程的结果可以生成模型。 在另一个实施例中，一种方法使用模型来监视合规性的过程。

公开(公告)号：US20160103946A1

公开(公告)日：2016-04-14

申请号：US14974732

申请日：2015-12-18

Applicant: KLA-Tencor Corporation

Inventor： Mohamed El Kodadi ,  Nuriel Amir ,  Roie Volkovich ,  Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel ,  Nadav Gutman ,  Stilian Pandev ,  Dzimtry Sanko

IPC: G06F17/50 ,  G01N21/47

CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的，聚焦敏感的和不对焦的图案在第二方向上表征。 在所产生的目标中，第一节距可以是关于装置间距，而第二节距可以是数倍。 可以产生第一个不对焦模式以产生第一临界尺寸，并且可以产生第二焦点敏感图案以仅在满足指定的焦点要求时产生可等于第一临界尺寸的第二临界尺寸， 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。

公开(公告)号：US11784097B2

公开(公告)日：2023-10-10

申请号：US17163904

申请日：2021-02-01

Applicant: KLA-TENCOR CORPORATION

Inventor： Choon Hoong Hoo ,  Fangren Ji ,  Amnon Manassen ,  Liran Yerushalmi ,  Antonio Mani ,  Allen Park ,  Stilian Pandev ,  Andrei Shchegrov ,  Jon Madsen

IPC: H01L21/00 ,  H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  G06T7/00 ,  G03F7/00 ,  G06F30/39 ,  G06F119/18

CPC classification number: H01L22/12 ,  G03F7/70616 ,  G03F7/70633 ,  G06F30/39 ,  G06T7/001 ,  H01L21/67253 ,  H01L23/544 ,  G06F2119/18 ,  G06T2207/20216 ,  G06T2207/30148 ,  H01L2223/54426

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

公开(公告)号：US11378451B2

公开(公告)日：2022-07-05

申请号：US15672120

申请日：2017-08-08

Applicant: KLA-Tencor Corporation

Inventor： Tianhan Wang ,  Aaron Rosenberg ,  Dawei Hu ,  Alexander Kuznetsov ,  Manh Dang Nguyen ,  Stilian Pandev ,  John Lesoine ,  Qiang Zhao ,  Liequan Lee ,  Houssam Chouaib ,  Ming Di ,  Torsten R. Kaack ,  Andrei V. Shchegrov ,  Zhengquan Tan

IPC: G01J3/18 ,  G01J3/28 ,  G01N21/55 ,  G01N21/956 ,  G01N21/21 ,  G01N21/25 ,  G01N21/88 ,  G01N21/84

Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.

公开(公告)号：US20210159128A1

公开(公告)日：2021-05-27

申请号：US17163904

申请日：2021-02-01

Applicant: KLA-TENCOR CORPORATION

Inventor： Choon Hoong Hoo ,  Fangren Ji ,  Amnon Manassen ,  Liran Yerushalmi ,  Antonio Mani ,  Allen Park ,  Stilian Pandev ,  Andrei Shchegrov ,  Jon Madsen

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  G06T7/00 ,  G03F7/20 ,  G06F30/39

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

公开(公告)号：US20190041266A1

公开(公告)日：2019-02-07

申请号：US15672120

申请日：2017-08-08

Applicant: KLA-Tencor Corporation

Inventor： Tianhan Wang ,  Aaron Rosenberg ,  Dawei Hu ,  Alexander Kuznetsov ,  Manh Dang Nguyen ,  Stilian Pandev ,  John Lesoine ,  Qiang Zhao ,  Liequan Lee ,  Houssam Chouaib ,  Ming Di ,  Torsten R. Kaack ,  Andrei V. Shchegrov ,  Zhengquan Tan

IPC: G01J3/18 ,  G01J3/28

Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.

公开(公告)号：US10580673B2

公开(公告)日：2020-03-03

申请号：US16198658

申请日：2018-11-21

Applicant: KLA-Tencor Corporation

Inventor： Stilian Pandev ,  Alexander Kuznetsov

IPC: H01L21/67 ,  H01L21/66 ,  G06T7/00 ,  G06K9/62

Abstract: In some embodiments, a first plurality of electron-microscope images for respective instances of a semiconductor structure is obtained from a first source. The electron-microscope images of the first plurality show different values of one or more semiconductor-fabrication parameters. A model is trained that specifies a relationship between the first plurality of electron-microscope images and the values of the one or more semiconductor-fabrication parameters. A second plurality of electron-microscope images for respective instances of the semiconductor structure on one or more semiconductor wafers is collected. The one or more semiconductor wafers are distinct from the first source. Values of the one or more semiconductor-fabrication parameters for the second plurality of electron-microscope images are predicted using the model.

公开(公告)号：US20190252270A1

公开(公告)日：2019-08-15

申请号：US16072657

申请日：2018-06-24

Applicant: KLA-TENCOR CORPORATION

Inventor： Choon Hoong Hoo ,  Fangren Ji ,  Amnon Manassen ,  Liran Yerushalmi ,  Antonio Mani ,  Allen Park ,  Stilian Pandev ,  Andrei Shchegrov ,  Jon Madsen

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  G06F17/50 ,  G06T7/00

CPC classification number: H01L22/12 ,  G03F7/20 ,  G06F17/5068 ,  G06F2217/12 ,  G06T7/001 ,  G06T2207/20216 ,  G06T2207/30148 ,  H01L21/67253 ,  H01L23/544 ,  H01L2223/54426

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.