公开(公告)号：US20220238801A1

公开(公告)日：2022-07-28

申请号：US17400912

申请日：2021-08-12

Applicant: Kioxia Corporation

Inventor： Katsuyoshi KOMATSU ,  Takeshi IWASAKI ,  Tadaomi DAIBOU ,  Hiroki KAWAI

IPC: H01L45/00 ,  G11C13/00

Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

公开(公告)号：US20240215259A1

公开(公告)日：2024-06-27

申请号：US18478213

申请日：2023-09-29

Applicant: Kioxia Corporation

Inventor： Yuya SATO ,  Masakazu GOTO ,  Hiroki KAWAI ,  Takeshi IWASAKI ,  Katsuyoshi KOMATSU

IPC: H10B61/00

CPC classification number: H10B61/10

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a switching layer provided between the first conductive layer and the third conductive layer; and a variable resistance layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, and an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of carbon (C), boron (B), nitrogen (N), silicon (Si), and tin (Sn).

公开(公告)号：US20220013579A1

公开(公告)日：2022-01-13

申请号：US17482865

申请日：2021-09-23

Applicant: Kioxia Corporation

Inventor： Tadaomi DAIBOU ,  Yasushi NAKASAKI ,  Tadashi KAI ,  Hiroki KAWAI ,  Takamitsu ISHIHARA ,  Junichi ITO

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mg), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).

公开(公告)号：US20210296585A1

公开(公告)日：2021-09-23

申请号：US17019664

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Tadaomi DAIBOU ,  Hiroki KAWAI ,  Katsuyoshi KOMATSU ,  Weidong LI ,  Shogo ITAI ,  Kouji MATSUO

IPC: H01L45/00

Abstract: A switching device in an embodiment includes: a first electrode; a second electrode, and a switching layer disposed between the first electrode and the second electrode. The switching layer is made of a material containing hafnium nitride. Otherwise, the switching layer is made of a material containing bismuth and at least one selected from the group consisting of silicon oxide, aluminum oxide, zirconium oxide, and gallium oxide, or a material containing at least one selected from the group consisting of bismuth oxide, bismuth nitride, bismuth boride, and bismuth sulfide.

公开(公告)号：US20230091204A1

公开(公告)日：2023-03-23

申请号：US17681853

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Takao KOSAKA ,  Hideto HORII ,  Hiroki TOKUHIRA ,  Kazuya MATSUZAWA ,  Hiroki KAWAI

IPC: H01L27/108 ,  H01L29/786 ,  G11C11/4091 ,  H01L29/66

Abstract: A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.

公开(公告)号：US20230085635A1

公开(公告)日：2023-03-23

申请号：US17687944

申请日：2022-03-07

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Kasumi YASUDA ,  Hiroki TOKUHIRA ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU

IPC: H01L45/00 ,  G11C13/00

Abstract: A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.

公开(公告)号：US20240215467A1

公开(公告)日：2024-06-27

申请号：US18476635

申请日：2023-09-28

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Takeshi IWASAKI ,  Katsuyoshi KOMATSU ,  Rina NOMOTO ,  Zhu QI ,  Takayuki SASAKI

IPC: H10N70/00 ,  G11C5/06 ,  H10B63/00

CPC classification number: H10N70/8828 ,  G11C5/06 ,  H10B63/80 ,  H10N70/883

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, adn an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of aluminum (Al), zinc (Zn), and gallium (Ga).

公开(公告)号：US20240215459A1

公开(公告)日：2024-06-27

申请号：US18476628

申请日：2023-09-28

Applicant: Kioxia Corporation

Inventor： Takeshi IWASAKI ,  Yosuke MATSUSHIMA ,  Makoto ONIZAKI ,  Katsuyoshi KOMATSU ,  Masakazu GOTO ,  Hiroki KAWAI ,  Rina NOMOTO ,  Kenta CHOKAWA ,  Zhu QI ,  Tadaomi DAIBOU

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.

公开(公告)号：US20210202838A1

公开(公告)日：2021-07-01

申请号：US17014587

申请日：2020-09-08

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Hiroki TOKUHIRA ,  Masatoshi YOSHIKAWA ,  Yuichi ITO

IPC: H01L45/00

Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0

公开(公告)号：US20210083007A1

公开(公告)日：2021-03-18

申请号：US16803933

申请日：2020-02-27

Applicant: KIOXIA CORPORATION

Inventor： Hiroki KAWAI ,  Daisuke WATANABE ,  Toshihiko NAGASE

IPC: H01L27/24 ,  H01L27/22

Abstract: According to one embodiment, a variable resistance element includes a first electrode, a second electrode, and a variable resistance layer and a tellurium-containing compound layer disposed between the first electrode and the second electrode. The tellurium-containing compound layer contains tellurium, oxygen, and at least one element selected from tin, copper, and bismuth. In some examples, the tellurium-containing compound layer can function as a switching layer in a memory cell structure.