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    LIGHT EMITTING DIODE STRUCTURE
    2.
    发明申请
    LIGHT EMITTING DIODE STRUCTURE 有权

    公开(公告)号：US20220310894A1

    公开(公告)日：2022-09-29

    申请号：US17655174

    申请日：2022-03-17

    Applicant: Lextar Electronics Corporation

    Inventor： Hsin-Chuan WANG ,  Tzong-Liang TSAI ,  Hsiu-Mei CHOU ,  Chin-Hung LUO

    IPC: H01L33/62 ,  H01L33/32

    Abstract: The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.

    INFRARED EMITTING FLUORIDE PHOSPHOR AND INFRARED LIGHT EMITTING DEVICE
    5.
    发明申请
    INFRARED EMITTING FLUORIDE PHOSPHOR AND INFRARED LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20190233723A1

    公开(公告)日：2019-08-01

    申请号：US16261533

    申请日：2019-01-29

    Applicant: Lextar Electronics Corporation

    Inventor： Chi LEE ,  Mu-Huai FANG ,  Ru-Shi LIU ,  Yi-Ting TSAI ,  Tzong-Liang TSAI ,  Yu-Chun LEE

    IPC: C09K11/08 ,  H01L33/50

    Abstract: An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr3+. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.

    Light Emitting Diode Structure
    6.
    发明申请
    Light Emitting Diode Structure 审中-公开
    发光二极管结构

    公开(公告)号：US20150123154A1

    公开(公告)日：2015-05-07

    申请号：US14319800

    申请日：2014-06-30

    Applicant: Lextar Electronics Corporation

    Inventor： Wen-Chieh HSU ,  Tzong-Liang TSAI

    IPC: H01L33/42

    CPC classification number: H01L33/44

    Abstract: A light emitting diode structure includes a first type semiconductor layer, an illumination layer, a second type semiconductor layer, a plurality of first light extraction improvement structures and a transparent conductive layer. The illumination layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the illumination layer, and the refractive index thereof is n1. The first light extraction improvement structures are disposed on the second type semiconductor layer, and the refractive index thereof is n2. The first light extraction improvement structures are spatially separated from each other, and each of them includes a slanted light outgoing surface oblique to the upper surface of the second type semiconductor layer. The transparent conductive layer conformably covers the first light extraction improvement structures and the second type semiconductor layer, and the refractive index thereof is n3, wherein n2>n3.

    Abstract translation: 发光二极管结构包括第一类型半导体层，照明层，第二类型半导体层，多个第一光提取改进结构和透明导电层。 照明层设置在第一类型半导体层上。 第二类型半导体层设置在照明层上，其折射率为n1。 第一光提取改进结构设置在第二类型半导体层上，其折射率为n2。 第一光提取改善结构在空间上彼此分离，并且它们各自包括倾斜于第二类型半导体层的上表面的倾斜光出射表面。 透明导电层顺应地覆盖第一光提取结构和第二类型半导体层，折射率为n3，其中n2> n3。

    LIGHT EMITTING DIODE STRUCTURE
    7.
    发明申请
    LIGHT EMITTING DIODE STRUCTURE 审中-公开
    发光二极管结构

    公开(公告)号：US20150115309A1

    公开(公告)日：2015-04-30

    申请号：US14493478

    申请日：2014-09-23

    Applicant: Lextar Electronics Corporation

    Inventor： Nai-Wei HSU ,  Te-Chung WANG ,  Tzong-Liang TSAI

    IPC: H01L33/62 ,  H01L33/44 ,  H01L33/36

    CPC classification number: H01L33/40

    Abstract: A light emitting diode structure includes a substrate, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a composite conductive layer, a first electrode, and a second electrode. The N-type semiconductor layer is located on the substrate. The light emitting layer is located on a portion of the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer. The composite conductive layer sequentially has a first conductive layer, a second conductive layer, and a third conductive layer. The first conductive layer is attached to the P-type semiconductor layer, and the resistance of the first conductive layer is greater than the resistance of the third conductive layer. The first electrode is located on the third conductive layer. The second electrode is located on another portion of the N-type semiconductor layer that is not covered by the light emitting layer.

    Abstract translation: 发光二极管结构包括衬底，N型半导体层，发光层，P型半导体层，复合导电层，第一电极和第二电极。 N型半导体层位于基板上。 发光层位于N型半导体层的一部分上。 P型半导体层位于发光层上。 复合导电层依次具有第一导电层，第二导电层和第三导电层。 第一导电层附接到P型半导体层，第一导电层的电阻大于第三导电层的电阻。 第一电极位于第三导电层上。 第二电极位于未被发光层覆盖的N型半导体层的另一部分上。

    LIGHT-EMITTING DIODE DEVICE
    8.
    发明申请
    LIGHT-EMITTING DIODE DEVICE 有权

    公开(公告)号：US20220029067A1

    公开(公告)日：2022-01-27

    申请号：US17083329

    申请日：2020-10-29

    Applicant: Lextar Electronics Corporation

    Inventor： Yi-Ting TSAI ,  Hung-Chia WANG ,  Chia-Chun HSIEH ,  Hung-Chun TONG ,  Yu-Chun LEE ,  Tzong-Liang TSAI

    IPC: H01L33/50

    Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.

    Light-Emitting Package Structure and Manufacturing Method Thereof
    10.
    发明申请
    Light-Emitting Package Structure and Manufacturing Method Thereof 有权

    公开(公告)号：US20210143133A1

    公开(公告)日：2021-05-13

    申请号：US16699091

    申请日：2019-11-28

    Applicant: Lextar Electronics Corporation

    Inventor： Hung-Chun TONG ,  Fu-Hsin CHEN ,  Wen-Wan TAI ,  Yu-Chun LEE ,  Tzong-Liang TSAI

    IPC: H01L25/075 ,  H01L33/58 ,  H01L33/52

    Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

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