LED display and manufacturing method thereof
    1.
    发明授权
    LED display and manufacturing method thereof 有权
    LED显示及其制造方法

    公开(公告)号:US09472733B2

    公开(公告)日:2016-10-18

    申请号:US14219035

    申请日:2014-03-19

    Abstract: A manufacturing method of a LED display is provided. A temporary substrate is provided, wherein the temporary substrate has a first adhesive layer and a plurality of first, second and third LED chips mounted on the first adhesive layer. A first transparent substrate is provided, the transparent substrate has a plurality of pixels disposed thereon, and each of the pixels comprises a first sub-pixel, a second sub-pixel and a third sub-pixel respectively surrounded by a light-insulating structure. Then, the temporary substrate and the first transparent substrate are bonded together, such that each of the first, second and third LED chips is correspondingly mounted in each of the first sub-pixels, the second sub-pixels and the third sub-pixels. After that, the temporary substrate is removed. A LED display manufactured by said method is also provided.

    Abstract translation: 提供了一种LED显示器的制造方法。 提供了一种临时衬底,其中临时衬底具有第一粘合剂层和安装在第一粘合剂层上的多个第一,第二和第三LED芯片。 提供第一透明衬底,透明衬底具有设置在其上的多个像素,并且每个像素包括分别由光隔离结构包围的第一子像素,第二子像素和第三子像素。 然后,将临时基板和第一透明基板接合在一起,使得第一,第二和第三LED芯片中的每一个相应地安装在每个第一子像素,第二子像素和第三子像素中。 之后,移除临时衬底。 还提供了通过所述方法制造的LED显示器。

    FLIP-CHIP LIGHT-EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    FLIP-CHIP LIGHT-EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
    闪光二极管发光二极管结构及其制造方法

    公开(公告)号:US20140061700A1

    公开(公告)日:2014-03-06

    申请号:US13965277

    申请日:2013-08-13

    CPC classification number: H01L33/62 H01L33/382 H01L2224/16

    Abstract: A flip-chip light-emitting diode structure comprises a carrier substrate, a light-emitting die structure, a reflective layer, an aperture, a dielectric layer, a first contact layer and a second contact layer. The light-emitting die structure, located on the carrier substrate, comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is formed between the first type and the second type semiconductor layer. The reflective layer is located on the first type semiconductor layer. The aperture penetrates the light-emitting die structure. The dielectric layer covers an inner sidewall of the aperture and extends to a portion of a surface of the reflective layer. The first contact layer is disposed on the part of the reflective layer not covered by the dielectric layer. The second contact layer fills up the aperture and is electrically connected to the second type semiconductor layer.

    Abstract translation: 倒装芯片发光二极管结构包括载体衬底,发光管芯结构,反射层,孔,电介质层,第一接触层和第二接触层。 位于载体基板上的发光管芯结构包括第一类型半导体层,第二类型半导体层和发光层。 发光层形成在第一类型和第二类型半导体层之间。 反射层位于第一类型半导体层上。 孔径穿透发光模具结构。 介电层覆盖孔的内侧壁并延伸到反射层表面的一部分。 第一接触层设置在未被电介质层覆盖的反射层的部分上。 第二接触层填充孔并电连接到第二类型半导体层。

    LED DISPLAY AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    LED DISPLAY AND MANUFACTURING METHOD THEREOF 有权
    LED显示屏及其制造方法

    公开(公告)号:US20170018691A1

    公开(公告)日:2017-01-19

    申请号:US15281229

    申请日:2016-09-30

    Abstract: A manufacturing method of a LED display is provided. A temporary substrate is provided, wherein the temporary substrate has a first adhesive layer and a plurality of first, second and third LED chips mounted on the first adhesive layer. A first transparent substrate is provided, the transparent substrate has a plurality of pixels disposed thereon, and each of the pixels comprises a first sub-pixel, a second sub-pixel and a third sub-pixel respectively surrounded by a light-insulating structure. Then, the temporary substrate and the first transparent substrate are bonded together, such that each of the first, second and third LED chips is correspondingly mounted in each of the first sub-pixels, the second sub-pixels and the third sub-pixels. After that, the temporary substrate is removed. A LED display manufactured by said method is also provided.

    Abstract translation: 提供了一种LED显示器的制造方法。 提供了一种临时衬底,其中临时衬底具有第一粘合剂层和安装在第一粘合剂层上的多个第一,第二和第三LED芯片。 提供第一透明衬底,透明衬底具有设置在其上的多个像素,并且每个像素包括分别由光隔离结构包围的第一子像素,第二子像素和第三子像素。 然后,将临时基板和第一透明基板接合在一起,使得第一,第二和第三LED芯片中的每一个相应地安装在每个第一子像素,第二子像素和第三子像素中。 之后,移除临时衬底。 还提供了通过所述方法制造的LED显示器。

    Light-emitting diode with side-wall bump structure and mounting structure having the same
    5.
    发明授权
    Light-emitting diode with side-wall bump structure and mounting structure having the same 有权
    具有侧壁凸块结构的发光二极管和具有其的安装结构

    公开(公告)号:US09054277B2

    公开(公告)日:2015-06-09

    申请号:US14248461

    申请日:2014-04-09

    Abstract: A light-emitting diode (LED) with a bump structure on a sidewall is provided. The LED comprises a substrate, an epitaxial structure, a first conductive bump, a second conductive bump, a first extended electrode and a second extended electrode. The substrate has a top surface, a first side surface and an inclined surface between the top surface and the first side surface. The epitaxial structure is disposed on the top surface of the substrate, and comprises a N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a transparent conductive layer, a P-electrode and a N-electrode. The first extended electrode and the second extended electrode connect the P-electrode and the N-electrode, extend through the inclined surface, and are electrically connected to the first and the second conductive bumps, respectively. A mounting structure comprises said LED, a sub-mount and a connector mounting the LED onto the sub-mount.

    Abstract translation: 提供了一种在侧壁上具有凸块结构的发光二极管(LED)。 LED包括衬底,外延结构,第一导电凸块,第二导电凸块,第一延伸电极和第二延伸电极。 基板具有顶表面,第一侧表面和在顶表面和第一侧表面之间的倾斜表面。 外延结构设置在衬底的顶表面上,并且包括N型半导体层,发光层,P型半导体层,透明导电层,P电极和N电极。 第一延伸电极和第二延伸电极连接P电极和N电极,延伸穿过倾斜表面,并分别电连接到第一和第二导电凸块。 安装结构包括所述LED,子安装座和将LED安装到子座上的连接器。

    LED DISPLAY AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    LED DISPLAY AND MANUFACTURING METHOD THEREOF 有权
    LED显示屏及其制造方法

    公开(公告)号:US20140312368A1

    公开(公告)日:2014-10-23

    申请号:US14219035

    申请日:2014-03-19

    Abstract: A manufacturing method of a LED display is provided. A temporary substrate is provided, wherein the temporary substrate has a first adhesive layer and a plurality of first, second and third LED chips mounted on the first adhesive layer. A first transparent substrate is provided, the transparent substrate has a plurality of pixels disposed thereon, and each of the pixels comprises a first sub-pixel, a second sub-pixel and a third sub-pixel respectively surrounded by a light-insulating structure. Then, the temporary substrate and the first transparent substrate are bonded together, such that each of the first, second and third LED chips is correspondingly mounted in each of the first sub-pixels, the second sub-pixels and the third sub-pixels. After that, the temporary substrate is removed. A LED display manufactured by said method is also provided.

    Abstract translation: 提供了一种LED显示器的制造方法。 提供了一种临时衬底,其中临时衬底具有第一粘合剂层和安装在第一粘合剂层上的多个第一,第二和第三LED芯片。 提供第一透明衬底,透明衬底具有设置在其上的多个像素,并且每个像素包括分别由光隔离结构包围的第一子像素,第二子像素和第三子像素。 然后,将临时基板和第一透明基板接合在一起,使得第一,第二和第三LED芯片中的每一个相应地安装在每个第一子像素,第二子像素和第三子像素中。 之后,移除临时衬底。 还提供了通过所述方法制造的LED显示器。

    Flip-chip light-emitting diode structure and manufacturing method thereof
    8.
    发明授权
    Flip-chip light-emitting diode structure and manufacturing method thereof 有权
    倒装芯片发光二极管结构及其制造方法

    公开(公告)号:US08859311B2

    公开(公告)日:2014-10-14

    申请号:US13965277

    申请日:2013-08-13

    CPC classification number: H01L33/62 H01L33/382 H01L2224/16

    Abstract: A flip-chip light-emitting diode structure comprises a carrier substrate, a light-emitting die structure, a reflective layer, an aperture, a dielectric layer, a first contact layer and a second contact layer. The light-emitting die structure, located on the carrier substrate, comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is formed between the first type and the second type semiconductor layer. The reflective layer is located on the first type semiconductor layer. The aperture penetrates the light-emitting die structure. The dielectric layer covers an inner sidewall of the aperture and extends to a portion of a surface of the reflective layer. The first contact layer is disposed on the part of the reflective layer not covered by the dielectric layer. The second contact layer fills up the aperture and is electrically connected to the second type semiconductor layer.

    Abstract translation: 倒装芯片发光二极管结构包括载体衬底,发光管芯结构,反射层,孔,电介质层,第一接触层和第二接触层。 位于载体基板上的发光管芯结构包括第一类型半导体层,第二类型半导体层和发光层。 发光层形成在第一类型和第二类型半导体层之间。 反射层位于第一类型半导体层上。 孔径穿透发光模具结构。 介电层覆盖孔的内侧壁并延伸到反射层表面的一部分。 第一接触层设置在未被电介质层覆盖的反射层的部分上。 第二接触层填充孔并电连接到第二类型半导体层。

    LED Sub-Mount and Method for Manufacturing Light Emitting Device Using the Sub-Mount
    9.
    发明申请
    LED Sub-Mount and Method for Manufacturing Light Emitting Device Using the Sub-Mount 审中-公开
    LED子座和使用子座制造发光装置的方法

    公开(公告)号:US20160380173A1

    公开(公告)日:2016-12-29

    申请号:US15259266

    申请日:2016-09-08

    Abstract: A light emitting device manufacturing method includes the following steps. A sub-mount, which has a plurality of electrical-conductive layers, is provided, and a surface between every adjacent two of the electrical-conductive layers has an adhesive-filling groove. An LED chip, which has a bottom substrate, is mounted on the sub-mount by a flip-chip way, and two electrodes of the LED chip are in contact with adjacent two of the electrical-conductive layers. Glue is filled along the adhesive-filling groove to be guided into a gap between the LED chip and the sub-mount.

    Abstract translation: 发光器件制造方法包括以下步骤。 提供具有多个导电层的子座,并且每个相邻的两个导电层之间的表面具有粘合剂填充槽。 具有底部衬底的LED芯片通过倒装芯片方式安装在子座上,并且LED芯片的两个电极与相邻的两个导电层接触。 胶粘剂沿着胶粘剂填充槽填充以被引导到LED芯片和副底座之间的间隙中。

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