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    Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
    1.
    发明授权
    Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof 失效
    半导体衬底制造方法，半导体压力传感器及其制造方法

    公开(公告)号：US06388279B1

    公开(公告)日：2002-05-14

    申请号：US09095131

    申请日：1998-06-10

    申请人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

    发明人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

    IPC分类号： H01L2720

    CPC分类号： G01L9/0054 ,  B81C1/00357 ,  B81C2201/019 ,  G01L9/0042

    摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

    摘要翻译： 在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠 。 通过抛光使第一基板从其上表面变薄而形成隔膜。 从第一基板的上表面形成到达连接孔的密封孔。 在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。 以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

    Method of producing a semiconductor dynamic sensor
    3.
    发明授权
    Method of producing a semiconductor dynamic sensor 失效
    半导体动态传感器的制造方法

    公开(公告)号：US5549785A

    公开(公告)日：1996-08-27

    申请号：US120380

    申请日：1993-09-14

    申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Shinsuke Watanabe ,  Minoru Nishida

    发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Shinsuke Watanabe ,  Minoru Nishida

    IPC分类号： G01P15/08 ,  B23P15/00

    CPC分类号： G01P15/0802 ,  Y10S148/159

    摘要： A method of producing a semiconductor dynamic sensor which features an improved sensitivity yet having a small size while avoiding damage to the thin distortion-producing portion. A resist film 49 is photo-patterned on the front main surface of the semiconductor substrate 41 except for the region where the upper isolation grooves are to be formed prior to forming the lower isolation groove 10 by the first etching of the back main surface of the semiconductor substrate 41 (which includes the epitaxial layer 42). Unlike the prior art, therefore, there is no need to spin-coat the front main surface of the semiconductor substrate 41 with the resist film 49 which is followed by photo-patterning after a predetermined region of the semiconductor substrate 41 has been reduced in thickness by the first etching. Therefore, damage therefore to the thin portion by the vacuum chucking the wafer during the spin-coating of the resist film is avoided.

    摘要翻译： 一种制造半导体动态传感器的方法，其具有改善的灵敏度但具有小尺寸，同时避免对薄变形产生部分的损害。 在形成下隔离槽10之前，除了要形成上隔离槽的区域之外，在半导体基板41的前主表面上，通过第一次蚀刻 半导体衬底41（包括外延层42）。 因此，与现有技术不同，不需要在半导体基板41的预定区域的厚度减小之后用抗蚀剂膜49旋涂半导体基板41的前主表面，随后进行光图案化 通过第一次蚀刻。 因此，避免了在抗蚀剂膜的旋转涂覆期间通过夹紧晶片的真空对薄部的损伤。

    Method of producing an acceleration sensor of a semiconductor
    4.
    发明授权
    Method of producing an acceleration sensor of a semiconductor 失效
    制造半导体加速度传感器的方法

    公开(公告)号：US5223086A

    公开(公告)日：1993-06-29

    申请号：US848721

    申请日：1992-03-09

    申请人： Masakazu Terada ,  Minoru Nishida ,  Shinsuke Watanabe

    发明人： Masakazu Terada ,  Minoru Nishida ,  Shinsuke Watanabe

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L29/84

    CPC分类号： G01P15/0802 ,  G01P15/123

    摘要： This invention relates to a method of producing an acceleration sensor of a semiconductor. Piezo resistance layers are formed in a silicon tip 2 of a single crystal etched in an anisotropic etching liquid such as a KOH solution, etc., using as a mask a silicon nitride film. Then the silicon tip 2 of the single crystal is soaked in an isotropic etching liquid for a predetermined time and is etched to a depth of 0.5-2.0 .mu.m. Further, a photoresist is applied over a whole surface thereof to form a slot extending to a hollow.

    摘要翻译： 本发明涉及一种制造半导体加速度传感器的方法。 在作为掩模的氮化硅膜的各向异性蚀刻液（例如KOH溶液等）中蚀刻的单晶的硅尖端2中形成压电电阻层。 然后将单晶硅尖端2浸入各向同性蚀刻液中预定时间，并蚀刻至0.5-2.0μm的深度。 此外，在其整个表面上施加光致抗蚀剂以形成延伸到中空的狭槽。