公开(公告)号：US07968434B2

公开(公告)日：2011-06-28

申请号：US12271488

申请日：2008-11-14

申请人： Munehiro Tada ,  Krishna Saraswat

发明人： Munehiro Tada ,  Krishna Saraswat

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02573 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28255 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/785

摘要： This invention provides a method of forming semiconductor films on dielectrics at temperatures below 400° C. Semiconductor films are required for thin film transistors (TFTs), on-chip sensors, on-chip micro-electromechanical systems (MEMS) and monolithic 3D-integrated circuits. For these applications, it is advantageous to form the semiconductor films below 400° C. because higher temperatures are likely to destroy any underlying devices and/or substrates. This invention successfully achieves low temperature growth of germanium films using diboran. First, diboran gas is supplied into a reaction chamber at a temperature below 400° C. The diboran decomposes itself at the given temperature and decomposed boron is attached to the surface of a dielectric, for e.g., SiO2, forming a nucleation site and/or a seed layer. Second, source gases for semiconductor film formation, for e.g., SiH4, GeH4, etc., are supplied into the chamber, thereby forming a semiconductor film.

摘要翻译： 本发明提供了一种在低于400℃的温度下在电介质上形成半导体膜的方法。薄膜晶体管（TFT），片上传感器，片上微机电系统（MEMS）和单片3D集成 电路。 对于这些应用，将半导体膜形成在低于400℃是有利的，因为更高的温度可能破坏任何下面的器件和/或衬底。 本发明成功地实现了使用二硼烷的锗膜的低温生长。 首先，在低于400℃的温度下将二硼烷气体供应到反应室中。二硼烷在给定温度下自身分解，并且分解的硼附着到电介质的表面，例如SiO 2，形成成核位置和/或 种子层。 其次，将例如SiH 4，GeH 4等的半导体膜形成用源气体供给到室内，形成半导体膜。

公开(公告)号：US08816312B2

公开(公告)日：2014-08-26

申请号：US13824098

申请日：2011-09-20

申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

IPC分类号： H01L29/00

CPC分类号： H01L45/04 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/73 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146

摘要： A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.

摘要翻译： 根据本发明的半导体器件包括：单元，其包括第一开关和第二开关，其中第一开关和第二开关中的每一个包括电阻变化层，其电阻状态根据极性而改变 并且第一开关和第二开关中的每一个具有两个电极，并且其中第一开关的一个电极和第二开关的一个电极彼此连接以形成公共节点，而另一个电极 第一开关构成第一节点，第二开关的另一个电极形成第二节点; 第一布线，与第一节点连接并形成信号传输线; 以及与第二节点连接并且通过单元元件与第一布线连接的第二布线。

公开(公告)号：US08796659B2

公开(公告)日：2014-08-05

申请号：US13635858

申请日：2011-03-16

申请人： Munehiro Tada ,  Koichiro Okamoto ,  Toshitsugu Sakamoto ,  Hiromitsu Hada

发明人： Munehiro Tada ,  Koichiro Okamoto ,  Toshitsugu Sakamoto ,  Hiromitsu Hada

IPC分类号： H01L29/04

CPC分类号： H01L51/0094 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/50 ,  C23C16/515 ,  C23C16/52 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1616 ,  H01L51/0591

摘要： A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.

摘要翻译： 可变电阻元件包括插入在第一和第二电极之间的第一电极，第二电极和离子传导层。 离子传导层含有至少含有氧和碳的有机氧化物。 离子传导层中的碳浓度分布使得靠近第一电极的区域中的碳浓度大于靠近第二电极的区域中的碳浓度。

公开(公告)号：US20110266678A1

公开(公告)日：2011-11-03

申请号：US13067960

申请日：2011-07-11

申请人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

发明人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/53233 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate, an insulating film formed above the semiconductor substrate, and a multilayered wiring formed in a prescribed area within the insulating film. The multilayered wiring includes a dual damascene wiring positioned on at least one layer of the multilayered wiring. The dual damascene wiring includes an alloy having copper as a principal component. A concentration of at least one metallic element contained as an added component of the alloy in a via connected to the dual damascene wiring is 10% or more higher in a via connected to a wiring whose width exceeds by five or more times a diameter of the via than that in another via connected to another wiring of a smallest width in a same upper wiring layer of the multilayered wiring.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的绝缘膜，以及形成在绝缘膜内的规定区域中的多层布线。 多层布线包括位于多层布线的至少一层上的双镶嵌布线。 双镶嵌线包括以铜为主要成分的合金。 在连接到双镶嵌布线的通孔中作为合金的添加成分含有的至少一种金属元素的浓度在连接到宽度超过五倍或更多倍的布线的通孔中为10％以上 通过连接到多层布线的同一上布线层中的最小宽度的另一布线的通孔。

公开(公告)号：US08043957B2

公开(公告)日：2011-10-25

申请号：US12299375

申请日：2007-05-16

申请人： Munehiro Tada ,  Hiroto Ohtake ,  Fuminori Ito ,  Yoshihiro Hayashi ,  Hironori Yamamoto

发明人： Munehiro Tada ,  Hiroto Ohtake ,  Fuminori Ito ,  Yoshihiro Hayashi ,  Hironori Yamamoto

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.

摘要翻译： 本发明提供了一种多层布线技术，其中在布线之间保持有效的低电容的同时获得了布线之间的高粘合性和高绝缘可靠性。 半导体器件的特征在于，第一绝缘膜是由至少一层包含含有硅，氧和碳的硅氧烷结构的层形成的绝缘膜; 第一绝缘膜的内部的硅氧烷结构含有比硅原子数多的碳原子数; 并且在第一绝缘膜和金属之间的界面中的至少一个上形成有含有比第一绝缘膜的内部少的碳原子数和更多数量的单位体积的氧原子的改性层， 第一绝缘膜和第二绝缘膜之间的界面。

公开(公告)号：US07999391B2

公开(公告)日：2011-08-16

申请号：US12278339

申请日：2007-02-06

申请人： Hiroto Ootake ,  Masayoshi Tagami ,  Munehiro Tada ,  Yoshihiro Hayashi

发明人： Hiroto Ootake ,  Masayoshi Tagami ,  Munehiro Tada ,  Yoshihiro Hayashi

IPC分类号： H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a wiring of the Damascene structure for preventing the TDDB withstand voltage degradation and for keeping the planarity to prevent the degradation of a focus margin. A trench wiring (213) is formed in an interlayer insulating film, which is composed of a silicon carbide-nitride film (205), a SiOCH film (206) and a silicon oxide film (207) [(e)]. The silicon oxide film (207) is etched at a portion adjacent to the wiring of a polished surface by dry etching or wet etching [(f)]. A silicon carbide-nitride film (SiCN) (214) is formed as a Cu cap film [(g)]. An interlayer insulating film is further formed thereon to form a conductive plug, a trench wiring and so on.

摘要翻译： 提供了一种用于防止TDDB耐电压劣化并保持平面性以防止聚焦余量劣化的镶嵌结构的布线。 沟槽布线（213）形成在由碳化硅 - 氮化物膜（SiO 2），SiOCH膜（206）和氧化硅膜（207）[（e）]组成的层间绝缘膜中。 氧化硅膜（207）通过干蚀刻或湿蚀刻（f）]在与抛光表面的布线相邻的部分被蚀刻。 形成碳化硅 - 氮化物膜（SiCN）（214）作为Cu帽膜[（g）]。 还在其上形成层间绝缘膜以形成导电插塞，沟槽布线等。

公开(公告)号：US07622808B2

公开(公告)日：2009-11-24

申请号：US11317399

申请日：2005-12-23

申请人： Hiroto Ohtake ,  Masayoshi Tagami ,  Munehiro Tada ,  Yoshihiro Hayashi

发明人： Hiroto Ohtake ,  Masayoshi Tagami ,  Munehiro Tada ,  Yoshihiro Hayashi

IPC分类号： H01L23/48

CPC分类号： H01L21/76813 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3143 ,  H01L21/31633 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device includes a first interconnection layer and a interlayer insulating layer. The first interconnection layer is formed on a upper side of a substrate, and includes a first interconnection. The interlayer insulating layer is formed on the first interconnection layer, and includes a via connected with the first interconnection at one end of the via and a second interconnection connected with the via at another end of the via. The interlayer insulating layer has a relative dielectric constant lower than that of a silicon oxide film. An upper portion of the interlayer insulating layer includes a silicon-oxide film, a silicon nitride film and a silicon oxide film in order from a lower portion.

摘要翻译： 半导体器件包括第一互连层和层间绝缘层。 第一互连层形成在基板的上侧，并且包括第一互连。 层间绝缘层形成在第一互连层上，并且包括在通孔的一端与第一互连连接的通孔和在通孔的另一端与通孔相连的第二互连。 层间绝缘层的相对介电常数比氧化硅膜低。 层间绝缘层的上部从下部开始依次包括氧化硅膜，氮化硅膜和氧化硅膜。

公开(公告)号：US20070013069A1

公开(公告)日：2007-01-18

申请号：US10558367

申请日：2004-05-28

申请人： Munehiro Tada ,  Yoshihiro Hayashi ,  Yoshimichi Harada ,  Fuminori Ito ,  Hiroto Ohtake ,  Tatsuya Usami

发明人： Munehiro Tada ,  Yoshihiro Hayashi ,  Yoshimichi Harada ,  Fuminori Ito ,  Hiroto Ohtake ,  Tatsuya Usami

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/53295 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilayer wiring structure for connecting a semiconductor device is disclosed which is obtained by forming metal wirings on a substrate in which the semiconductor device is formed. The wiring structure free from such conventional problems that insulation between wirings next to each other is damaged or insulation resistance between wirings next to each other is deteriorated by generation of leakage current when fine metal wirings are formed in a porous insulating film. A method for producing such a wiring structure is also disclosed. In the metal wiring structure on the substrate in which the semiconductor device is formed, a insulating barrier layer (413) containing an organic matter is formed between an interlayer insulating film and a metal wiring. This insulating barrier layer reduces leakage current between wirings next to each other, thereby improving insulation reliability.

摘要翻译： 公开了一种用于连接半导体器件的多层布线结构，其通过在其中形成半导体器件的基板上形成金属布线而获得。 布线结构没有这样的常规问题，即在多孔绝缘膜中形成细金属布线时，通过产生漏电流而使彼此相邻的布线之间的绝缘损坏或彼此相邻的布线之间的绝缘电阻恶化。 还公开了一种用于制造这种布线结构的方法。 在形成了半导体器件的基板上的金属布线结构中，在层间绝缘膜和金属布线之间形成含有有机物质的绝缘阻挡层（413）。 该绝缘阻挡层减少彼此相邻的布线之间的漏电流，从而提高绝缘可靠性。

公开(公告)号：US09059402B2

公开(公告)日：2015-06-16

申请号：US13380092

申请日：2010-06-21

申请人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Yuko Yabe ,  Yukishige Saito ,  Hiromitsu Hada

发明人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Yuko Yabe ,  Yukishige Saito ,  Hiromitsu Hada

IPC分类号： H01L45/00 ,  G11C13/00

CPC分类号： H01L45/1233 ,  G11C13/0011 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/56 ,  H01L45/085 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

摘要： A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order.

摘要翻译： 所公开的电阻可变元件具有高可靠性，高密度化和良好的绝缘性能。 该装置提供一种电阻可变元件，其中包括主要包含铜的金属，阀金属的氧化物膜，含氧的离子传导层和第二电极的第一电极按此顺序层压。

公开(公告)号：US09059082B2

公开(公告)日：2015-06-16

申请号：US13704225

申请日：2011-06-09

申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

IPC分类号： H01L29/06 ,  H01L27/24 ,  G11C13/00 ,  H01L27/10 ,  H01L45/00

CPC分类号： H01L27/2436 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/146

摘要： A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein (a) the first electrode of the first switching element and the first electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected each other or (b) the second electrode of the first switching element and the second electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected each other.

摘要翻译： 半导体器件包括第一开关元件，第二开关元件和至少一个第三开关元件; 其中所述第三开关元件包括第一端子和第二端子，其中所述第一开关元件和所述第二开关元件中的每一个包括离子导体，所述第一电极被设置为与所述离子导体接触并提供金属离子 以及第二电极，其设置成与离子导体接触并且比第一电极不易电离; 并且其中（a）第一开关元件的第一电极和第二开关元件的第一电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第一电极 另一个或（b）第一开关元件的第二电极和第二开关元件的第二电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第二电极 其他。