公开(公告)号：US09966516B2

公开(公告)日：2018-05-08

申请号：US15503028

申请日：2015-07-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Philipp Schlosser ,  Andreas Waldschik

IPC: H01L33/60 ,  H01L33/48 ,  H01L25/075 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L33/54

CPC classification number: H01L33/60 ,  H01L21/568 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2224/96 ,  H01L2924/18162 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A method for producing a lighting device is provided. According to the method, a plurality of semiconductor emitters arranged alongside one another are embedded in a light-transmissive filling compound apart from a side having their electrical connections, trenches are introduced into the light-transmissive filling compound at the side having the electrical connections between at least two semiconductor emitters, the side of the light-transmissive filling compound having the electrical connections, including the electrical connections, is covered with a dielectric material, electrical lines are led through the dielectric material to the electrical connections, and at least some of the trenches are severed.

公开(公告)号：US10205071B2

公开(公告)日：2019-02-12

申请号：US15577045

申请日：2016-05-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Andreas Biebersdorf ,  Dirk Becker ,  Bernd Barchmann ,  Björn Hoxhold ,  Philipp Schlosser ,  Andreas Waldschik

IPC: H01L33/60 ,  H01L33/62 ,  H01L25/075 ,  H01L33/48 ,  H01L33/64 ,  H01L33/00

Abstract: A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top. The carrier has a metallic core material and at least on the carrier top a metal layer. A dielectric mirror is applied to the core material. At least two holes are formed through the carrier. A ceramic layer with a thickness of at most 150 μm at least on the carrier underside and in the holes is produced. The ceramic layer includes the core material as a component. Metallic contact layers are applied to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes. At least one radiation-emitting semiconductor chip is applied to the carrier top and the semiconductor chip is electronically bonded to the contact layers.

公开(公告)号：US20160163939A1

公开(公告)日：2016-06-09

申请号：US14906724

申请日：2014-07-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ralph Wagner ,  Thomas Veit ,  Björn Hoxhold ,  Philipp Schlosser

IPC: H01L33/62 ,  H01L31/02 ,  H01L31/0203 ,  H01L33/52

CPC classification number: H01L33/62 ,  H01L31/02005 ,  H01L31/0203 ,  H01L33/385 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor chip includes a carrier, a semiconductor body having an active region that generates and/or receives radiation, and an insulation layer wherein the semiconductor body is fastened on the carrier with a connecting layer; the carrier extends in a vertical direction between a first main surface facing toward the semiconductor body, and a second main surface facing away from the semiconductor body, and a lateral surface connects the first main surface and the second main surface to one another; a first region of the lateral surface of the carrier has an indentation; a second region of the lateral surface runs in the vertical direction between the indentation and the second main surface; the insulation layer at least partially covers each of the semiconductor body and the first region; and the second region is free of the insulation layer.

Abstract translation: 光电半导体芯片包括载体，具有产生和/或接收辐射的有源区的半导体本体，以及绝缘层，其中半导体主体用连接层紧固在载体上; 载体在面向半导体主体的第一主表面和背离半导体本体的第二主表面之间沿垂直方向延伸，并且侧表面将第一主表面和第二主表面彼此连接; 载体的侧表面的第一区域具有凹陷; 侧表面的第二区域在凹陷和第二主表面之间沿垂直方向延伸; 绝缘层至少部分地覆盖半导体本体和第一区域中的每一个; 并且第二区域没有绝缘层。

公开(公告)号：US20180145234A1

公开(公告)日：2018-05-24

申请号：US15577045

申请日：2016-05-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Andreas Biebersdorf ,  Dirk Becker ,  Bernd Barchmann ,  Björn Hoxhold ,  Philipp Schlosser ,  Andreas Waldschik

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/486 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/0075 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top, wherein the carrier has a metallic core material and at least on the carrier top a metal layer and following this a dielectric mirror are applied to the core material, forming at least two holes through the carrier, producing a ceramic layer with a thickness of at most 150 μm at least on the carrier underside and in the holes, wherein the ceramic layer includes the core material as a component, applying metallic contact layers to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes, and applying at least one radiation-emitting semiconductor chip to the carrier top and electrical bonding of the semiconductor chip to the contact layers.