公开(公告)号：US11862651B2

公开(公告)日：2024-01-02

申请号：US16777060

申请日：2020-01-30

Applicant: OmniVision Technologies, Inc.

Inventor： Alireza Bonakdar ,  Zhiqiang Lin ,  Lindsay Grant

IPC: H01L27/146 ,  G02B3/00 ,  G02B5/20

CPC classification number: H01L27/14629 ,  G02B3/0037 ,  G02B5/201 ,  G02B5/208 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685

Abstract: A light-trapping image sensor includes a pixel array and a lens array. The pixel array is formed in and on a semiconductor substrate and including photosensitive pixels each including a reflective material forming a cavity around a portion of semiconductor material to at least partly trap light that has entered the cavity. The cavity has a ceiling at a light-receiving surface of the semiconductor substrate, and the ceiling forms an aperture for receiving the light into the cavity. The lens array is disposed on the pixel array. Each lens of the lens array is aligned to the aperture of a respective cavity to focus the light into the cavity through the aperture.

公开(公告)号：US11810928B2

公开(公告)日：2023-11-07

申请号：US17322536

申请日：2021-05-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Bill Phan ,  Seong Yeol Mun ,  Yuanliang Liu ,  Alireza Bonakdar ,  Chengming Liu ,  Zhiqiang Lin

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/1465 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685

Abstract: CMOS image sensor with LED flickering reduction and low color cross-talk are disclosed. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Each pixel includes a plurality of large subpixels (LPDs) and at least one small subpixel (SPD). A plurality of color filters are disposed over individual subpixels. Each individual SPD is laterally adjacent to at least one other SPD.

公开(公告)号：US11362124B2

公开(公告)日：2022-06-14

申请号：US16777193

申请日：2020-01-30

Applicant: OmniVision Technologies, Inc.

Inventor： Alireza Bonakdar ,  Zhiqiang Lin ,  Bill Phan ,  Badrinath Padmanabhan

IPC: H01L27/14 ,  H01L27/146

Abstract: An image sensor with quantum efficiency enhanced by inverted pyramids includes a semiconductor substrate and a plurality of microlenses. The semiconductor substrate includes an array of pixels. Each of the pixels is configured to convert light incident on the pixel to an electrical output signal, the semiconductor substrate having a top surface for receiving the light. The top surface forms a plurality of inverted pyramids in each pixel. The plurality of microlenses are disposed above the top surface and aligned to the plurality of inverted pyramids, respectively.

公开(公告)号：US10665626B2

公开(公告)日：2020-05-26

申请号：US15962943

申请日：2018-04-25

Applicant: OmniVision Technologies, Inc.

Inventor： Cheng Zhao ,  Chen-Wei Lu ,  Zhiqiang Lin ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

Abstract: An image sensor comprises a first photodiode and a second photodiode having a smaller full-well capacitance than the first photodiode, wherein the second photodiode is adjacent to the first photodiode; a first micro-lens is disposed above the first photodiode and on an illuminated side of the image sensor; a second micro-lens is disposed above the second photodiode and on the illuminated side of the image sensor; and a coating layer disposed on both the first and second micro-lens, wherein the coating layer forms a flat top surface on the second micro-lens and a conformal coating layer on the first micro-lens.

公开(公告)号：US09936153B1

公开(公告)日：2018-04-03

申请号：US15285352

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14636 ,  H01L27/14656 ,  H04N5/374 ,  H04N5/378

Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.

公开(公告)号：US20150295007A1

公开(公告)日：2015-10-15

申请号：US14250192

申请日：2014-04-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

IPC: H01L27/146 ,  H01L31/167

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

公开(公告)号：US11158661B2

公开(公告)日：2021-10-26

申请号：US16576603

申请日：2019-09-19

Applicant: OmniVision Technologies, Inc.

Inventor： Alireza Bonakdar ,  Zhiqiang Lin

IPC: H01L27/146

Abstract: An image sensor includes a two-dimensional photodiode-array formed in a semiconductor substrate, a first waveguide, and a first color filter. The first waveguide is aligned to a first photodiode of the photodiode-array, located above a top substrate surface of the semiconductor substrate. A first core of the first waveguide has a first core width that is less than a pitch of the photodiode-array in a first direction and a second direction corresponding to respective orthogonal dimensions of the photodiode-array. The first color filter is on a top waveguide surface of the first waveguide and has a first non-uniform thickness above the first core. The first waveguide is between the top substrate surface and the first color filter.

公开(公告)号：US10224364B2

公开(公告)日：2019-03-05

申请号：US15666086

申请日：2017-08-01

Applicant: OmniVision Technologies, Inc.

Inventor： Cheng Zhao ,  Cunyu Yang ,  Chen-Wei Lu ,  Zhiqiang Lin

IPC: H04N5/33 ,  H04N5/335 ,  H01L27/146 ,  H01L27/148 ,  H04N5/3745

Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure. The NIR QE and MTF enhancement structure comprises: a NIR QE enhancement sub-structure comprising at least one NIR QE enhancement elements within a photosensitive region of the photodiode, wherein the NIR QE enhancement sub-structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve optical sensitivity, including NIR light sensitivity, of the image sensor; and a MTF enhancement sub-structure disposed on the non-illuminated surface of the semiconductor material, facing toward the NIR QE enhancement sub-structure, wherein the MTF enhancement structure has a geometry corresponding to the NIR QE enhancement sub-structure, to ensure the incident light is still within the photodiode after redistribution.

公开(公告)号：US10044960B2

公开(公告)日：2018-08-07

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US20180098008A1

公开(公告)日：2018-04-05

申请号：US15285352

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14636 ,  H01L27/14656 ,  H04N5/374 ,  H04N5/378

Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.