Transparent electrode and method for manufacturing the same
    4.
    发明授权
    Transparent electrode and method for manufacturing the same 有权
    透明电极及其制造方法

    公开(公告)号:US09330811B2

    公开(公告)日:2016-05-03

    申请号:US14232070

    申请日:2013-05-17

    Abstract: There is provided a transparent electrode comprising a supporting substrate, a first transparent electrically-conductive film provided on the supporting substrate, a transparent insulating film provided on the first transparent electrically-conductive film, and a second transparent electrically-conductive film provided on the transparent insulating film. In the transparent electrode of the present invention, all of the first transparent electrically-conductive film, the second transparent electrically-conductive film and the transparent insulating film provided therebetween comprise a metal compound, and the first transparent electrically-conductive film and the second transparent electrically-conductive film have a crystalline structure, whereas the transparent insulating film has an amorphous structure.

    Abstract translation: 提供了一种透明电极,其包括支撑基板,设置在支撑基板上的第一透明导电膜,设置在第一透明导电膜上的透明绝缘膜,以及设置在透明导电膜上的第二透明导电膜 绝缘膜。 在本发明的透明电极中,所有第一透明导电膜,第二透明导电膜和设置在其间的透明绝缘膜均包含金属化合物,第一透明导电膜和第二透明导电膜 导电膜具有晶体结构,而透明绝缘膜具有非晶结构。

    Gate drive circuit, and semiconductor breaker

    公开(公告)号:US11791803B2

    公开(公告)日:2023-10-17

    申请号:US17626296

    申请日:2020-07-10

    CPC classification number: H03K3/012 H03K17/04

    Abstract: A gate drive circuit includes: an input terminal; a first circuit path inserted into a line connecting the input terminal and a gate of a power transistor; a second circuit path connected in parallel to the first circuit path; and a third circuit path connected in parallel to the second circuit path. The first circuit path includes a gate resistor (Rgon). The second circuit path includes a first capacitor and a first resistor connected in series. The third circuit path includes a second capacitor and a second resistor connected in series. The second capacitor has a capacitance value greater than a capacitance value of the first capacitor. The second resistor has a resistance value greater than a resistance value of the first resistor. The gate resistor (Rgon) has a resistance value greater than the resistance value of the second resistor.

    Driver circuit and switch system
    6.
    发明授权

    公开(公告)号:US11637552B2

    公开(公告)日:2023-04-25

    申请号:US17614716

    申请日:2020-04-28

    Abstract: A speed-up circuit is configured to be provided between a power supply terminal and a gate of a semiconductor switching element. An impedance element is configured to be provided between a signal input terminal and a node, the node being between the speed-up circuit and the gate of the semiconductor switching element. In the speed-up circuit, a second field effect transistor is connected in series to a first field effect transistor and is configured to be connected to the gate of the semiconductor switching element. The impedance element has an impedance higher than an impedance of the speed-up circuit when both the first field effect transistor and the second field effect transistor are in an ON state.

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