摘要:
A nonvolatile memory device and methods of manufacturing the same has one electrode with a higher work function and a second electrode with a lower work function. The nonvolatile memory device further comprises one or more resistive random access memory (RRAM) cells. The RRAM cells comprise a semiconductor layer with a bandgap of at least four electron volts and a barrier layer between the semiconductor layer and one of the electrodes.
摘要:
This disclosure provides a nonvolatile memory device and related methods of manufacture and operation. The device may include one or more resistive random access memory (RRAM) that use techniques to provide a memory device with more predictable operation. In particular, forming voltage required by particular designs may be reduced through the use of a barrier layer, a reverse polarity forming voltage pulse, a forming voltage pulse where electrons are injected from a lower work function electrode, or through the use of an anneal in a reducing environment. One or more of these techniques may be applied, depending on desired application and results.
摘要:
This disclosure provides a method of fabricating a semiconductor device layer and an associated memory cell. Empirical data may be used to generate a hysteresis curve associated with deposition for a metal-insulator-metal structure, with curve measurements reflecting variance of an electrical property as a function of cathode voltage used during a sputtering process. By generating at least one voltage level to be used during the sputtering process, where the voltage reflects a suitable value for the electrical property from among the values obtainable in mixed-mode deposition, a semiconductor device layer may be produced with improved characteristics and durability. A multistable memory cell or array of such cells manufactured according to this process can, for a set of given materials, be fabricated to have minimal leakage or “off” current characteristics (Ileak or Ioff, respectively) or a maximum ratio of “on” current to “off” current (Ion/Ioff).
摘要:
A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.
摘要:
A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.
摘要:
Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.
摘要:
A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.
摘要:
A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.
摘要:
A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can flow through the resistive switching memory device. Together, the two incorporated layers help improve device performance and lifetime.
摘要:
A nonvolatile resistive memory element includes a host oxide formed from an interfacial oxide layer. The interfacial oxide layer is formed on the surface of a deposited electrode layer via in situ or post-deposition surface oxidation treatments.