公开(公告)号：US20230053696A1

公开(公告)日：2023-02-23

申请号：US17699489

申请日：2022-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun LEE ,  Gwangnae GIL ,  Seyoung PARK ,  Sola WOO

IPC: G06N3/04 ,  G06F30/367 ,  G06N3/08

Abstract: To predict characteristics of a semiconductor device, basic training data corresponding to a combination of process data, device data and simulation result data are generated using a plurality of compact models. Each compact model generates the simulation result data indicating characteristics of a semiconductor device corresponding to the device data by performing simulation based on the device data, the plurality of compact models respectively corresponding to a plurality of process data and a plurality of semiconductor products. A deep learning model is trained based on the basic training data such that the deep learning model outputs prediction data indicating the characteristics of the semiconductor device. Target prediction data indicating characteristics of the semiconductor device included in a target semiconductor product are generated based on the deep learning model, the device data and the process data corresponding to the target semiconductor product.

公开(公告)号：US20220085257A1

公开(公告)日：2022-03-17

申请号：US17323042

申请日：2021-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiwon PARK ,  Namsung KIM ,  Youngsub SHIN ,  Jonghyun LEE ,  Daemyung CHUN ,  Byungchul CHOI

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/46

Abstract: A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

公开(公告)号：US20210362644A1

公开(公告)日：2021-11-25

申请号：US17177913

申请日：2021-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongmin KWON ,  Geunwoo KO ,  Jaeyoon KIM ,  Jungwook LEE ,  Jonghyun LEE

IPC: B60Q1/14

Abstract: A light-emitting device includes a plurality of first light-emitting regions contiguously arranged in a first direction. Each of the first light-emitting regions includes at least one light-emitting cell. A plurality of second light-emitting regions are contiguously arranged in the first direction. Each of the second light-emitting regions includes at least one light-emitting cell. The plurality of second light-emitting regions are adjacent to the plurality of first light-emitting regions in a second direction that intersects the first direction. A first driver controller controls emission of the plurality of first light-emitting regions. Each of the first light-emitting regions has a greater dimension than each of the second light-emitting regions in the second direction. The first driver controller simultaneously turns on or off an entirety of each of the first light-emitting regions.

公开(公告)号：US20240309244A1

公开(公告)日：2024-09-19

申请号：US18679075

申请日：2024-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changmook RIM ,  Suyoung SEO ,  Hyeonbeom KIM ,  Jonghyun LEE ,  Hyunsuk CHOI

IPC: C09J7/29 ,  C09J7/38 ,  C09J11/04

CPC classification number: C09J7/29 ,  C09J7/38 ,  C09J11/04 ,  C09J2301/16 ,  C09J2301/204 ,  C09J2483/00

Abstract: A protective film of a display device includes: a hard coating layer; a transparent adhesive layer; a base layer between the hard coating layer and the transparent adhesive layer; and a primer layer between the transparent adhesive layer and the base layer, where the transparent adhesive layer comprises at least one of polysilazane or silazane.

公开(公告)号：US20230113207A1

公开(公告)日：2023-04-13

申请号：US17724009

申请日：2022-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sola WOO ,  Gwangnae GIL ,  Seyoung PARK ,  Jonghyun LEE

IPC: G06F30/3308 ,  G06F30/31

Abstract: To predict characteristics of a semiconductor device, basic training data corresponding to a combination of input data and simulation result data are generated using a technology computer aided design (TCAD) simulator. The TCAD simulator generates the simulation result data by performing a simulation based on the input data of the TCAD simulator such that the simulation result data indicates characteristics of semiconductor devices corresponding to the input data of the TCAD simulator. A deep learning model is trained based on the basic training data such that the deep learning model is configured to output prediction data indicating the characteristics of the semiconductor devices. Target prediction data is generated based on the deep learning model and input data corresponding to the target semiconductor product such that the target prediction data indicates the characteristics of the semiconductor device included in the target semiconductor product.

公开(公告)号：US20210320504A1

公开(公告)日：2021-10-14

申请号：US17223363

申请日：2021-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hangseok CHOI ,  Duhyun KIM ,  Seungbeom KANG ,  Daeneung KIM ,  Gihoon LEE ,  Jonghyun LEE

IPC: H02J7/00

Abstract: An apparatus and a method of controlling charging of a plurality of batteries connected in parallel in an electronic device are provided. The electronic device includes a charging circuit, a first battery configured to be arranged on a first electrical path connected from the charging circuit to the ground, a second battery configured to be arranged in parallel with the first battery on a second electrical path branched between the charging circuit on the first electrical path and the first battery and connected to the ground, a sensing circuit configured to identify a voltage of the second battery through a fourth electrical path branched on the second electrical path, and a processor operatively connected to the sensing circuit and the charging circuit, the charging circuit identifies a voltage of the first battery through a third electrical path branched on the first electrical path, receives a current control signal based on the voltage of the second battery through the processor, and controls a magnitude of a current supplied to the first battery or the second battery based on the current control signal.

公开(公告)号：US20230238485A1

公开(公告)日：2023-07-27

申请号：US17900269

申请日：2022-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonguk SEO ,  Donggun LEE ,  Jonghyun LEE ,  Myunggoo CHEONG ,  Seungwan CHAE ,  Youngjo TAK

IPC: H01L33/32 ,  H01L33/10 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/32 ,  H01L33/10 ,  H01L33/382 ,  H01L33/62

Abstract: A light emitting device includes a first light transmitting layer, a second light transmitting layer provided on the first light transmitting layer, a plurality of mesa structures provided on the second light transmitting layer and configured to generate light in an ultraviolet band, and passivation patterns provided on side surfaces of the plurality of mesa structures. Each of the plurality of mesa structures includes a first epitaxial pattern including an aluminum gallium nitride, a second epitaxial pattern provided on the first epitaxial pattern and including an aluminum gallium nitride, a third epitaxial pattern provided on the second epitaxial pattern and including an aluminum gallium nitride, and a fourth epitaxial pattern provided on the third epitaxial pattern and including a gallium nitride. A horizontal width of each of the plurality of mesa structures is in a range of about 5 μm to about 30 μm.

公开(公告)号：US20230125401A1

公开(公告)日：2023-04-27

申请号：US17741860

申请日：2022-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun LEE ,  Gwangnae GIL ,  Seyoung PARK ,  Sola WOO

IPC: G06F30/3308 ,  G06F30/333 ,  G06K9/62 ,  G06N3/04

Abstract: To predict characteristics of a semiconductor device, a simulation current-voltage curve of the semiconductor device is generated using compact models where each compact model generates simulation result data by performing a simulation based on device data. The simulation result data indicate characteristics of semiconductor devices corresponding to the device data. The compact models respectively corresponding to process data and semiconductor products. Simulation reference points on the simulation current-voltage curve are extracted. Basic training data corresponding to a combination of the simulation reference points and the simulation current-voltage curve are generated. A deep learning model is trained based on the basic training data such that the deep learning model outputs a prediction current-voltage curve. A target prediction current-voltage curve is generated based on the deep learning model and target reference points corresponding to the target semiconductor product. The deep learning model is a generative adversarial network.

公开(公告)号：US20220302017A1

公开(公告)日：2022-09-22

申请号：US17830811

申请日：2022-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Seung SONG ,  Kwang-Young LEE ,  Jonghyun LEE

IPC: H01L23/528 ,  H01L27/11 ,  H01L21/768

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

公开(公告)号：US20220270525A1

公开(公告)日：2022-08-25

申请号：US17500098

申请日：2021-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young KIM ,  Geunwoo KO ,  Minsu KIM ,  Geeyoung SUNG ,  Dongyeoul LEE ,  Sangbum LEE ,  Jonghyun LEE ,  Hongseok LEE ,  Punjae CHOI ,  Jong-Young HONG

IPC: G09G3/00 ,  G09G3/32 ,  G03H1/22 ,  G02B30/34

Abstract: A three-dimensional holographic display device includes a light emitting diode (LED) array including a plurality of light sources controlled to sequentially output light according to a preset pattern, a lens configured to refract light incident from the LED array, a spatial light modulator (SLM) configured to modulate light incident from the lens, and a processor configured to generate a plurality of holographic signals each comprising depth information adjusted according to an arrangement location of each of the plurality of light sources, and for each of the plurality of light sources, control the SLM to modulate the light based on a holographic signal corresponding to the light source.