公开(公告)号：US20150345046A1

公开(公告)日：2015-12-03

申请号：US14655827

申请日：2013-12-11

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke MUTO ,  Yusuke KIMURA ,  Tomoya UTASHIRO ,  Seiichi TAKAHASHI ,  Kenji MOMOSE ,  Hisanori KURIBAYASHI ,  Naoki YASUDA

IPC: C30B25/08 ,  C30B25/10 ,  C30B29/36 ,  C30B25/20

CPC classification number: C30B25/08 ,  C23C16/325 ,  C23C16/45502 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/463 ,  C30B25/10 ,  C30B25/14 ,  C30B25/20 ,  C30B29/36

Abstract: A CVD device equipped with a container chamber (100) having an interior space (100a), and containing a substrate in a manner such that the film formation surface thereof faces upward from the bottom side (fifth region (A5)) of the interior space (100a). Silane gas and propane gas are supplied to the interior space (100a). A stainless-steel ceiling (120) is provided on the top of the interior space (100a). The ceiling (120) is provided with first through third partition members (171-173) attached thereto which comprise stainless steel, are positioned so as to extend in the -Z-direction and transect the X-direction, and divide the top side of the interior space (100a) into first through fourth regions (A1-A4). The substrate positioned inside the interior space (100a) is heated to 1600° C. The first through third partition members (171-173) and the ceiling (120) are cooled to 300° C. or lower by a cooling mechanism.

Abstract translation: 一种装备有具有内部空间（100a）的容器室（100）的CVD装置，并且以使其成膜表面从内部空间的底侧（第五区域（A5））向上方的方式包含基板 （100a）。 硅烷气体和丙烷气体被供应到内部空间（100a）。 在内部空间（100a）的顶部设置有不锈钢天花板（120）。 天花板（120）设置有附接到其上的第一至第三分隔构件（171-173），其包括不锈钢，定位成沿-Z方向延伸并横切X方向，并且将 所述内部空间（100a）进入第一至第四区域（A1-A4）。 将位于内部空间（100a）内的基板加热至1600℃。通过冷却机构将第一至第三分隔部件（171-173）和顶板（120）冷却至300℃以下。

公开(公告)号：US20160379860A1

公开(公告)日：2016-12-29

申请号：US15260152

申请日：2016-09-08

Applicant: SHOWA DENKO K.K.

Inventor： Yoshiaki KAGESHIMA ,  Daisuke MUTO ,  Kenji MOMOSE ,  Yoshihiko MIYASAKA

IPC: H01L21/68 ,  C23C16/52 ,  C23C16/32 ,  H01L21/02

CPC classification number: H01L21/681 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/52 ,  C30B25/02 ,  C30B25/12 ,  C30B25/16 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/34

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract translation: 本发明的SiC外延片制造方法包括：使用SiC外延晶片制造装置，在SiC单晶晶片的表面上制造包括SiC外延层的SiC外延晶片，同时将原料气体供给到室内; 并且在测量由先前制造的SiC外延晶片的SiC外延层上的室的内部部件的材料的三角形缺陷的表面密度测量后制造随后的SiC外延晶片。

公开(公告)号：US20140339571A1

公开(公告)日：2014-11-20

申请号：US14447137

申请日：2014-07-30

Applicant: SHOWA DENKO K.K.

Inventor： Kenji MOMOSE ,  Yutaka TAJIMA ,  Yasuyuki SAKAGUCHI ,  Michiya ODAWARA ,  Yoshihiko MIYASAKA

IPC: H01L29/06 ,  H01L29/16

CPC classification number: H01L29/0684 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/1608

Abstract: A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm−1 or less.

Abstract translation: 通过在以0.4°〜5°的偏角倾斜的4H-SiC单晶基板上形成SiC外延层而获得的SiC外延片，其中连接到浅凹坑的步进串联的线密度为 由于SiC外延片中的螺旋位错为5mm-1以下。

公开(公告)号：US20170233893A1

公开(公告)日：2017-08-17

申请号：US15587258

申请日：2017-05-04

Applicant: SHOWA DENKO K.K.

Inventor： Akira MIYASAKA ,  Yutaka TAJIMA ,  Yoshiaki KAGESHIMA ,  Daisuke MUTO ,  Kenji MOMOSE

IPC: C30B29/36 ,  C23C16/32 ,  H01L21/02 ,  C30B25/20 ,  H01L29/16 ,  H01L29/34

CPC classification number: H01L21/0262 ,  C23C16/325 ,  C30B25/00 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L22/12 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/34

Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).

公开(公告)号：US20160208414A1

公开(公告)日：2016-07-21

申请号：US14913865

申请日：2014-08-13

Applicant: SHOWA DENKO K.K.

Inventor： Michiya ODAWARA ,  Yutaka TAJIMA ,  Daisuke MUTO ,  Kenji MOMOSE

IPC: C30B25/18 ,  H01L21/02 ,  C30B29/36

CPC classification number: C30B25/186 ,  C23C16/325 ,  C23C16/4404 ,  C30B25/08 ,  C30B25/12 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

Abstract: The method for producing an SiC epitaxial wafer according to the present invention includes: a step of vacuum baking a coated carbon-based material member at a degree of vacuum of 2.0×10−3 Pa or less in a dedicated vacuum baking furnace; a step of installing the coated carbon-based material member in an epitaxial wafer manufacturing apparatus; and a step of placing an SiC substrate in the epitaxial wafer manufacturing apparatus and epitaxially growing an SiC epitaxial film on the SiC substrate.

Abstract translation: 本发明的SiC外延片的制造方法包括：在专用的真空烘烤炉中以2.0×10 -3 Pa以下的真空度对涂布的碳系材料进行真空烘烤的工序; 将涂布的碳基材料部件安装在外延晶片制造装置中的步骤; 以及将SiC衬底放置在外延晶片制造装置中并在SiC衬底上外延生长SiC外延膜的步骤。

公开(公告)号：US20160194753A1

公开(公告)日：2016-07-07

申请号：US14655822

申请日：2013-12-11

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke MUTO ,  Yusuke KIMURA ,  Tomoya UTASHIRO ,  Seiichi TAKAHASHI ,  Kenji MOMOSE

IPC: C23C16/32 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/325 ,  C23C16/45502 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/46

Abstract: A CVD device including: a chamber containing a substrate having a SiC-film formation surface; a heating mechanism for heating the substrate from a direction opposite the film formation surface; a third supply space (231) for supplying a third raw-material gas containing carbon in a direction (X) toward the substrate from the lateral side of the substrate; a second supply space (221) for supplying a second raw-material gas containing silicon in the direction (X) from the lateral side of the substrate toward the side farther than the third raw-material gas when viewed from the film formation surface; and a blocking gas supply section for supplying a blocking gas for suppressing the upward movement of the third raw-material gas and the second raw-material gas in a second direction from the side facing the film formation surface toward the film formation surface.

Abstract translation: 1.一种CVD装置，包括：包含具有SiC膜形成表面的基板的室; 加热机构，用于从与所述成膜表面相反的方向加热所述基底; 第三供应空间（231），用于从所述基板的横向侧朝向所述基板从所述方向（X）供给包含碳的第三原料气体; 第二供给空间（221），从成膜面观察时，从所述基板的侧面朝向比所述第三原料气体更远的方向从所述方向（X）向所述方向（X）供给含硅的第二原料气体; 以及阻挡气体供给部，其从面向成膜面的一侧向成膜面供给用于抑制第三原料气体和第二原料气体沿第二方向的向上运动的阻塞气体。