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    Group III nitride substrate with oxygen gradient, method of making, and method of use
    1.
    发明授权
    Group III nitride substrate with oxygen gradient, method of making, and method of use 有权

    公开(公告)号：US12224172B2

    公开(公告)日：2025-02-11

    申请号：US18072684

    申请日：2022-11-30

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'Evelyn ,  Keiji Fukutomi ,  Drew W. Cardwell ,  David N. Italiano ,  Chiaki Domoto

    IPC: B32B27/02 ,  C30B29/40 ,  H01L21/02 ,  C30B7/10

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
    2.
    发明授权
    Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate 有权

    公开(公告)号：US11466384B2

    公开(公告)日：2022-10-11

    申请号：US16736274

    申请日：2020-01-07

    Applicant: SLT Technologies, Inc

    Inventor： Mark P. D'Evelyn ,  Derrick S. Kamber

    IPC: C30B25/04 ,  C30B29/40 ,  C30B25/16 ,  C30B25/20

    Abstract: A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.

    Ultrapure mineralizer and improved methods for nitride crystal growth
    4.
    发明授权
    Ultrapure mineralizer and improved methods for nitride crystal growth 有权

    公开(公告)号：US12252812B2

    公开(公告)日：2025-03-18

    申请号：US18434568

    申请日：2024-02-06

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'Evelyn ,  Paul M. Von Dollen ,  Lisa M. Gay ,  Douglas W. Pocius ,  Jonathan D. Cook

    IPC: C30B7/10 ,  C30B29/40

    Abstract: A method for growth of group III metal nitride crystals includes providing one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process.

    Aluminum-containing nitride ceramic matrix composite, method of making, and method of use
    5.
    发明授权
    Aluminum-containing nitride ceramic matrix composite, method of making, and method of use 有权

    公开(公告)号：US12168632B2

    公开(公告)日：2024-12-17

    申请号：US17963910

    申请日：2022-10-11

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'Evelyn ,  David N. Italiano

    IPC: C04B35/581 ,  C04B35/626 ,  C04B35/645 ,  C04B35/65 ,  C09K11/02 ,  C09K11/77 ,  B28B1/30 ,  B28B3/02

    Abstract: Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.

    Large area group III nitride crystals and substrates, methods of making, and methods of use
    7.
    发明授权
    Large area group III nitride crystals and substrates, methods of making, and methods of use 有权

    公开(公告)号：US12000063B2

    公开(公告)日：2024-06-04

    申请号：US17173170

    申请日：2021-02-10

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. Cardwell ,  Mark P. D'Evelyn

    IPC: C30B29/40 ,  C01B21/06 ,  C30B25/04 ,  C30B25/18

    CPC classification number: C30B25/18 ,  C01B21/0632 ,  C30B25/04 ,  C30B29/406

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

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