公开(公告)号：US20140091451A1

公开(公告)日：2014-04-03

申请号：US14032618

申请日：2013-09-20

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Philippe Delpech ,  Eric Sabouret ,  Sebastien Gallois-Garreignot

IPC: H01L23/00 ,  H01L21/50

CPC classification number: H01L23/562 ,  H01L21/50 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/02235 ,  H01L2224/02381 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05548 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/131 ,  H01L2924/014

Abstract: A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.

Abstract translation: 半导体器件可以包括邻近器件的顶表面的至少一个焊盘以及位于该至少一个焊盘下方的金属裂纹停止结构。 金属裂纹结构可以具有内封套和外封套，并且可以被配置为与至少一个焊盘垂直对准，使得至少一个焊盘的边缘在内包封和外包封之间。

公开(公告)号：US09356090B2

公开(公告)日：2016-05-31

申请号：US14640705

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Vincent Fiori ,  Sebastien Gallois-Garreignot ,  Denis Rideau ,  Clement Tavernier

IPC: H01L29/04 ,  H01L29/78

CPC classification number: H01L29/045 ,  H01L23/522 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

Abstract translation: 衬底包括沿结晶面（100）取向并被绝缘区域限制的有源区。 MOS晶体管包括沿着<110>型晶体方向纵向取向的通道。 由金属形成并形成为T形状的基本图案是电惰性的，并且位于与通道的横向端部相邻的绝缘区域的区域上。 T形基本图案的水平分支基本上平行于通道的纵向定向。

公开(公告)号：US20150022987A1

公开(公告)日：2015-01-22

申请号：US14330347

申请日：2014-07-14

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Grenoble 2) SAS

Inventor： Sebastien Gallois-Garreignot ,  Jérôme Lopez ,  Gil Provent ,  Caroline Moutin ,  Vincent Fiori

IPC: H05K7/02 ,  H05K1/11

CPC classification number: H05K7/02 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/13006 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81815 ,  H05K1/111 ,  H05K2201/10439 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: An electronic device includes an integrated circuit chip with an insulating passivation layer. An opening in the passivation layer uncovers a first region of an electrical contact. An electrical connection pad is formed to fill the opening by covering the first region and extend in projection in such a way as to cover a second region situated on the passivation layer surrounding the opening. The periphery of at least one of the first and second regions has an elongate or oblong shape. Centers of the opening and the pad are aligned with each other.

Abstract translation: 电子设备包括具有绝缘钝化层的集成电路芯片。 钝化层中的开口露出电接触的第一区域。 形成电连接垫以通过覆盖第一区域而填充开口，并且以突出方式延伸以覆盖位于围绕开口的钝化层上的第二区域。 第一和第二区域中的至少一个区域的周边具有细长或长方形形状。 开口和垫的中心彼此对准。

公开(公告)号：US20150311277A1

公开(公告)日：2015-10-29

申请号：US14640705

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Vincent Fiori ,  Sebastien Gallois-Garreignot ,  Denis Rideau ,  Clement Tavernier

IPC: H01L29/04 ,  H01L29/10

CPC classification number: H01L29/045 ,  H01L23/522 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

Abstract translation: 衬底包括沿结晶面（100）取向并被绝缘区域限制的有源区。 MOS晶体管包括沿着<110>型晶体方向纵向取向的通道。 由金属形成并形成为T形状的基本图案是电惰性的，并且位于与通道的横向端部相邻的绝缘区域的区域上。 T形基本图案的水平分支基本上平行于通道的纵向定向。

公开(公告)号：US08981551B2

公开(公告)日：2015-03-17

申请号：US14032618

申请日：2013-09-20

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Philippe Delpech ,  Eric Sabouret ,  Sebastien Gallois-Garreignot

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/50

CPC classification number: H01L23/562 ,  H01L21/50 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/02235 ,  H01L2224/02381 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05548 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/131 ,  H01L2924/014

Abstract: A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.

Abstract translation: 半导体器件可以包括邻近器件的顶表面的至少一个焊盘以及位于该至少一个焊盘下方的金属裂纹停止结构。 金属裂纹结构可以具有内封套和外封套，并且可以被配置为与至少一个焊盘垂直对准，使得至少一个焊盘的边缘在内包封和外包封之间。