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公开(公告)号:US12189980B2
公开(公告)日:2025-01-07
申请号:US18136041
申请日:2023-04-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun Chu Oh , Beomkyu Shin
Abstract: The present disclosure provides storage devices and methods for operating the same. In some embodiments, a storage device includes a non-volatile memory including a plurality of sub-blocks that are independently erasable, and a processor configured to control a garbage collection operation on the plurality of sub-blocks. The plurality of sub-blocks includes a plurality of first sub-blocks that have a first block size and a plurality of second sub-blocks that have a second block size. The second block size is different from the first block size. The processor is further configured to select a victim sub-block with a lowest ratio of a valid page count to an invalid page count from among the plurality of sub-blocks, and copy a valid page of the victim sub-block to a target sub-block from among the plurality of sub-blocks.
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公开(公告)号:US20240264934A1
公开(公告)日:2024-08-08
申请号:US18426975
申请日:2024-01-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jungho PARK , Insu kim , Beomkyu Shin , Jaeyong Jeong
IPC: G06F12/02 , G06F12/0882 , G06F13/16
CPC classification number: G06F12/0246 , G06F12/0882 , G06F13/1668 , G06F2212/7201
Abstract: In some embodiments, the memory system for communicating with a host includes a non-volatile memory device storing first mapping information, a volatile memory device storing second mapping information, and a memory controller. The first mapping information indicates a relationship between a logical address and a portion of a first physical address. The first physical address indicates a location where user data is stored. The second mapping information indicates a second relationship between the logical address and a second physical address that corresponds to a remaining portion of the first physical address. The memory controller is configured to obtain a target logical address that has been received from the host, and determine, based on the second mapping information, a target second physical address mapped to the target logical address. The non-volatile memory device is configured to obtain a target first physical address by using the first mapping information.
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公开(公告)号:US20240331782A1
公开(公告)日:2024-10-03
申请号:US18539914
申请日:2023-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junyeong Seok , Beomkyu Shin , Eunchu Oh
CPC classification number: G11C16/3431 , G11C16/0483 , G11C16/16 , G11C16/3445 , H01L24/08 , H01L25/0657 , H01L25/18 , H10B80/00 , H01L2224/08145 , H01L2924/1431 , H01L2924/14511
Abstract: A memory block is divided into sub blocks including a first sub block and a second sub block that are disposed in a vertical direction where the memory block includes a plurality of cell strings and each cell string includes a plurality of memory cells that are disposed in the vertical direction. A normal erase operation is performed independently with respect to each of the sub blocks. A disturbance verification read operation with respect to the first sub block is performed to determine whether a threshold voltage of memory cells connected to a wordline in an erased state of the first sub block is increased higher than a reference level. A post erase operation is selectively performed based on a result of the disturbance verification read operation to decrease the threshold voltage of memory cells in the erased state of the first sub block.
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公开(公告)号:US20240053917A1
公开(公告)日:2024-02-15
申请号:US18492762
申请日:2023-10-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Wonseb Jeong , Yang Seok Ki , Jungmin Seo , Beomkyu Shin , Sangoak Woo , Younggeon Yoo , Chanho Yoon , Myungjune Jung
IPC: G06F3/06 , G06F12/0802
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0679 , G06F12/0802 , G06F2212/60
Abstract: A storage device includes a nonvolatile memory device and a storage controller. The storage controller includes a multi-protocol host interface circuit that receives a first-type request including a first logical address from an external host and transmits/receives data corresponding to the first-type request with the external host by a block unit. Additionally, the multi-protocol host interface circuit receives a second-type request including a first physical address from the external host and transmits/receives data corresponding to the second-type request with the external host by a unit smaller than the block unit. A mapping cache manager manages an address translation table cache, sends an address translation request including the first physical address to the external host, and receives a response including mapping information corresponding to the first physical address from the external host.
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公开(公告)号:US12260116B2
公开(公告)日:2025-03-25
申请号:US18492762
申请日:2023-10-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Wonseb Jeong , Yang Seok Ki , Jungmin Seo , Beomkyu Shin , Sangoak Woo , Younggeon Yoo , Chanho Yoon , Myungjune Jung
IPC: G06F3/06 , G06F12/0802
Abstract: A storage device includes a nonvolatile memory device and a storage controller. The storage controller includes a multi-protocol host interface circuit that receives a first-type request including a first logical address from an external host and transmits/receives data corresponding to the first-type request with the external host by a block unit. Additionally, the multi-protocol host interface circuit receives a second-type request including a first physical address from the external host and transmits/receives data corresponding to the second-type request with the external host by a unit smaller than the block unit. A mapping cache manager manages an address translation table cache, sends an address translation request including the first physical address to the external host, and receives a response including mapping information corresponding to the first physical address from the external host.
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公开(公告)号:US12013754B2
公开(公告)日:2024-06-18
申请号:US17479067
申请日:2021-09-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Beomkyu Shin , Sungkyu Park
IPC: G06F11/10 , G06F3/06 , G11C29/52 , G11B20/18 , G11C7/10 , G11C11/56 , G11C13/00 , G11C16/10 , G11C29/42
CPC classification number: G06F11/1068 , G06F3/0604 , G06F3/0659 , G06F3/0679 , G11C29/52 , G06F3/065 , G11B2020/1823 , G11C7/1006 , G11C11/5628 , G11C13/0069 , G11C16/10 , G11C29/42 , G11C2211/5646 , G11C2211/5647
Abstract: A nonvolatile memory device performs a compare and write operation. The compare and write operation includes reading read data from memory cells, inverting first write data to generate second write data, adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data, performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data, and comparing the read data with each of the fifth write data and the sixth write data and writing one of the fifth and sixth write data in the memory cells based on a result of the comparison.
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公开(公告)号:US11763869B2
公开(公告)日:2023-09-19
申请号:US17549095
申请日:2021-12-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kuiyon Mun , Beomkyu Shin , Jaeyong Jeong
CPC classification number: G11C8/18 , G11C7/106 , G11C7/1066 , G11C7/1087 , G11C7/1093 , G11C7/222 , G11C8/06
Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a clock pin, a clock signal being received from a controller through the clock pin; a first input/output pin; a second input/output pin, data being received from the controller in synchronization with the clock signal through the second input/output pin; a command/address buffer configured to operate at a first operating speed and buffer a command and an address received through the first input/output pin in synchronization with the clock signal; a memory cell array including a plurality of memory cells; and a control logic configured to control operations with respect to the plurality of memory cells, based on the command and the address buffered in the command/address buffer.
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公开(公告)号:US11822813B2
公开(公告)日:2023-11-21
申请号:US17680773
申请日:2022-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Wonseb Jeong , Yang Seok Ki , Jungmin Seo , Beomkyu Shin , Sangoak Woo , Younggeon Yoo , Chanho Yoon , Myungjune Jung
IPC: G06F3/06 , G06F12/0802
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0679 , G06F12/0802 , G06F2212/60
Abstract: A storage device includes a nonvolatile memory device and a storage controller. The storage controller includes a multi-protocol host interface circuit that receives a first-type request including a first logical address from an external host and transmits/receives data corresponding to the first-type request with the external host by a block unit. Additionally, the multi-protocol host interface circuit receives a second-type request including a first physical address from the external host and transmits/receives data corresponding to the second-type request with the external host by a unit smaller than the block unit. A mapping cache manager manages an address translation table cache, sends an address translation request including the first physical address to the external host, and receives a response including mapping information corresponding to the first physical address from the external host.
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公开(公告)号:US11200932B2
公开(公告)日:2021-12-14
申请号:US16916345
申请日:2020-06-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kuiyon Mun , Beomkyu Shin , Jaeyong Jeong
Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a clock pin, a clock signal being received from a controller through the clock pin; a first input/output pin; a second input/output pin, data being received from the controller in synchronization with the clock signal through the second input/output pin; a command/address buffer configured to operate at a first operating speed and buffer a command and an address received through the first input/output pin in synchronization with the clock signal; a memory cell array including a plurality of memory cells; and a control logic configured to control operations with respect to the plurality of memory cells, based on the command and the address buffered in the command/address buffer.
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公开(公告)号:US10374630B2
公开(公告)日:2019-08-06
申请号:US15652260
申请日:2017-07-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jiyoup Kim , Dong-Min Shin , Beomkyu Shin , Junjin Kong , Hong Rak Son
Abstract: A low-density parity check (LDPC) decoder may include a variable node processing unit and a check node processing unit. The check node processing unit includes memory elements storing a check node value. The memory elements are interconnected through two or more paths, and each of the paths may include a total or partial cyclic permutation of the memory elements to transmit the check node value.
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