公开(公告)号：US20240063221A1

公开(公告)日：2024-02-22

申请号：US18125429

申请日：2023-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungwoo Lee ,  Yeonho Park ,  Minchan Gwak ,  Hojun Kim

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775 ,  H01L21/28123 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/66439 ,  H01L29/66545

Abstract: A semiconductor device includes active regions, gate structures intersecting the active regions and including gate electrodes, source/drain regions on the active regions on sides of the gate structures, and a gate isolation structure isolating gate structures, which oppose each other, from each other on a region between the active regions. The gate structures that oppose each other include a first gate structure, a second gate structure opposing the first gate structure, a third gate structure extending in parallel to the first gate structure, and a fourth gate structure opposing the third gate structure and extending in parallel to the second gate structure. The gate isolation structure includes a first isolation structure of a line type extending in the first horizontal direction, and second isolation structures of a hole type penetrating through the first isolation structure between the first and second gate structures and between the third and fourth gate structures.

公开(公告)号：US10044336B2

公开(公告)日：2018-08-07

申请号：US15403712

申请日：2017-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungbin Hong ,  Hojun Kim ,  Kyungmin Park ,  Jin-Hee Won

IPC: H03G3/34 ,  H04R1/10

Abstract: The present disclosure relates to an apparatus for preventing noise in an electronic device. An apparatus for preventing noise in an electronic device includes a microphone unit including a microphone, the microphone unit connected to a first power terminal and a second power terminal, and a switch unit including at least one switch and at least one resistance, the switch unit connected to the first power terminal and the microphone in series.

公开(公告)号：US09973869B2

公开(公告)日：2018-05-15

申请号：US15287959

申请日：2016-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hojun Kim ,  Jinhee Won ,  Daechul Jeong ,  Sungbin Hong

IPC: H04B15/00 ,  H04R29/00 ,  H05K5/00 ,  H05K5/02 ,  H04B1/18

CPC classification number: H04R29/001 ,  H04B1/18 ,  H04R2420/05 ,  H04R2499/11 ,  H05K5/0017 ,  H05K5/0086 ,  H05K5/0247

Abstract: An electronic device and noise canceling method thereof is provided. The electronic device may include a housing; at least one output circuit arranged inside the housing and configured to generate a first signal; an opening formed on one side of the housing; a hole connected to the opening; a receptacle arranged inside the hole, and configured to receive an external connector, and electrically connected to the at least one output circuit; at least one sensor arranged within a predetermined proximity range to at least one of the opening and the receptacle; and a control circuit electrically connected electrically to the at least one output circuit, the receptacle, and the at least one sensor, wherein the control circuit is configured to detect the external connector approaching to at least one of the opening and the receptacle using the at least one sensor, to generate a second signal upon detection of the approaching external connector, and to control the at least one output circuit to change the first signal at least partly based on the second signal.

公开(公告)号：US20240145556A1

公开(公告)日：2024-05-02

申请号：US18382616

申请日：2023-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gukhee Kim ,  Kyoungwoo Lee ,  Sangcheol Na ,  Minchan Gwak ,  Youngwoo Kim ,  Hojun Kim ,  Dongick Lee

IPC: H01L29/417 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L29/41733 ,  H01L23/5286 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

Abstract: An embodiment of the present inventive step provides a semiconductor device, comprising: first and second fin-type active patterns disposed on an upper surface of a substrate, and having different widths; first and second gate structures crossing the first and second fin-type active patterns, respectively; first and second source/drain regions disposed on the first and second fin-type active patterns, respectively; first and second contact structures connected to the first and second source/drain regions, respectively; a gate isolation structure adjacent to the first fin-type active pattern having a relatively large width; a buried conductive structure contacting one end surface of the gate isolation structure, and connected to the second contact structure; a conductive through-structure extending from a lower surface of the substrate, and connected to the buried conductive structure; and a first wiring layer electrically connected to the first contact structure and the buried conductive structure.

公开(公告)号：US20240088200A1

公开(公告)日：2024-03-14

申请号：US18321817

申请日：2023-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeewoong Kim ,  Hojun Kim ,  Taiko Yamaguchi

IPC: H01L27/08 ,  H01F27/28 ,  H01F27/29 ,  H01L23/522 ,  H01L23/58

CPC classification number: H01L28/10 ,  H01F27/2804 ,  H01F27/29 ,  H01L23/5227 ,  H01L23/585

Abstract: An integrated circuit including an inductive element according to some embodiments is provided. The inductive element includes a first through electrode extending in a first direction that is perpendicular to a substrate (e.g., an upper surface of the substrate), an upper metallization pattern connected to the first through electrode and extending in a second direction that is perpendicular to the first direction, and a lower metallization pattern connected to the first through electrode and extending in the second direction, wherein the upper metallization pattern and the lower metallization pattern are spaced apart from each other with the first through electrode therebetween.

公开(公告)号：US20240079467A1

公开(公告)日：2024-03-07

申请号：US18296209

申请日：2023-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeewoong Kim ,  Jisu Kang ,  Hojun Kim

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes active regions, including a first active region and a second active region, extending in a first horizontal direction, an isolation region defining the active regions, a gate structure disposed on the isolation region and extending in a second horizontal direction to intersect the active region, and separation structures penetrating through the gate structure and disposed on the isolation region between the first active region and the second active region. The separation structures include a first separation structure extending into the isolation region, and a second separation structure disposed on the first separation structure and penetrating through at least a portion of the first separation structure, and a width of a lower region of the second separation structure in the second horizontal direction is less than a width of an upper region of the first separation structure in the second horizontal direction.

公开(公告)号：US10468234B2

公开(公告)日：2019-11-05

申请号：US15208787

申请日：2016-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek Lim ,  Kangsoo Kim ,  Hojun Kim ,  Jeonghoon Nam ,  Sejun Park

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

Abstract: A semiconductor device fabricating apparatus includes a gas mixer having an upper surface and a lower surface, each of the upper and lower surfaces has an elliptical plane, and a side surface connecting the upper and lower surfaces, a gas inlet pipe on an upper portion of the gas mixer, and a gas outlet pipe on a lower portion of the gas mixer.