公开(公告)号：US20130147022A1

公开(公告)日：2013-06-13

申请号：US13706960

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-soo YOON ,  Jongwon HONG ,  Insun PARK ,  Jongmyeong LEE ,  Seung-Wook CHOI

IPC: H01L29/06

CPC classification number: H01L29/0607 ,  H01L23/3192 ,  H01L23/562 ,  H01L27/108 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device may include an interlayer insulating layer containing hydrogen and a first passivation layer configured to prevent or inhibit an out-gassing of the hydrogen. In the method, a second passivation layer configured to control a warpage characteristic of a wafer may be formed on the first passivation layer.

Abstract translation: 半导体器件可以包括含有氢的层间绝缘层和被配置为防止或抑制氢的排气的第一钝化层。 在该方法中，可以在第一钝化层上形成用于控制晶片的翘曲特性的第二钝化层。

公开(公告)号：US20160362785A1

公开(公告)日：2016-12-15

申请号：US15048995

申请日：2016-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongyoung KIM ,  Yongsoon CHOI ,  Honggun KIM ,  Jongmyeong LEE ,  Byoungdeog CHOI

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45512 ,  C23C16/30 ,  C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

Abstract: An apparatus for manufacturing semiconductor devices having a gas mixer includes a gas supply and a reaction chamber, and the gas supply includes an upper gas mixer, an intermediate gas mixer disposed under the upper gas mixer, a lower gas mixer disposed under the intermediate gas mixer, a first gas supply pipe which is disposed on an upper portion of the upper gas mixer and supplies a first gas to the upper gas mixer, a second gas supply pipe which is disposed on an upper end portion of a side surface of the upper gas mixer and supplies a second gas to the upper gas mixer, and a third gas supply pipe which is disposed on a side surface of the intermediate gas mixer and supplies a third gas to the intermediate gas mixer.

Abstract translation: 一种用于制造具有气体混合器的半导体器件的装置包括气体供应和反应室，并且气体供应包括上部气体混合器，设置在上部气体混合器下方的中间气体混合器，设置在中间气体混合器下方的下部气体混合器 第一气体供给管，其设置在上部气体混合器的上部，并向第一气体混合器供给第一气体;第二气体供给管，其设置在上部气体的侧面的上端部; 混合器并将第二气体供应到上部气体混合器，以及第三气体供应管，其设置在中间混合气体的侧表面上并将第三气体供应到中间气体混合器。

公开(公告)号：US20150235959A1

公开(公告)日：2015-08-20

申请号：US14625282

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Hyeonjin SHIN ,  Seongjun PARK ,  Donghyun IM ,  Hyun PARK ,  Keunwook SHIN ,  Jongmyeong LEE ,  Hanjin LIM

IPC: H01L23/532 ,  H01L27/108

CPC classification number: H01L23/53276 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

Abstract translation: 示例性实施例涉及布线结构，其形成方法和使用该布线结构的电子设备。 布线结构包括与金属层直接接触的第一导电材料层上的第一导电材料层和纳米晶体石墨烯层。

公开(公告)号：US20140080302A1

公开(公告)日：2014-03-20

申请号：US13966345

申请日：2013-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tsukasa MATSUDA ,  Jinnam KIM ,  Jongho YUN ,  Jongmyeong LEE

IPC: H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/7682 ,  H01L21/76852 ,  H01L21/76885

Abstract: A method of manufacturing a semiconductor device including forming a first sacrificial layer on a substrate, the first sacrificial layer including a conductive material, forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer including an insulating material, patterning the second sacrificial layer and the first sacrificial layer to form an opening successively penetrating the second and first sacrificial layers, conformally forming a seed layer on the second and first sacrificial layers including the opening, and forming a conductive pattern filling the opening having the seed layer by a plating process.

Abstract translation: 一种制造半导体器件的方法，包括在衬底上形成第一牺牲层，所述第一牺牲层包括导电材料，在所述第一牺牲层上形成第二牺牲层，所述第二牺牲层包括绝缘材料，图案化所述第二牺牲层 层和第一牺牲层，以形成连续穿过第二和第一牺牲层的开口，在包括开口的第二和第一牺牲层上保形地形成晶种层，并且通过电镀形成填充具有晶种层的开口的导电图案 处理。

公开(公告)号：US20210104538A1

公开(公告)日：2021-04-08

申请号：US16882829

申请日：2020-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo LEE ,  Jongmyeong LEE ,  Iksoo KIM ,  Jiwoon IM

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L29/792 ,  H01L27/11573 ,  G11C7/18 ,  H01L27/11565

Abstract: A semiconductor device may comprise a stack structure on a substrate, the stack structure including a plurality of dielectric layers and a plurality of transparent conductive oxide layers, the dielectric layers and the transparent conductive oxide layers are alternately stacked, each of the dielectric layers and a corresponding one of the transparent conductive oxide layer adjacent to each other in a vertical direction have equal horizontal widths, and a channel structure extending through the stack structure, the channel structure including an information storage layer, a channel layer inside the information storage layer, and a buried dielectric layer inside the channel layer.

公开(公告)号：US20160296893A1

公开(公告)日：2016-10-13

申请号：US15036727

申请日：2014-11-05

Applicant: SAMSUNG ELECTRONICS CO.,LTD

Inventor： Young Moo LEE ,  Mariola CALLE ,  Hye Jin JO ,  Jongmyeong LEE

IPC: B01D71/64 ,  C08J3/24 ,  C08G73/22 ,  B01D67/00 ,  B01D53/22

CPC classification number: B01D71/64 ,  B01D53/228 ,  B01D67/0006 ,  B01D71/76 ,  B01D2323/30 ,  C08G73/22 ,  C08J3/247 ,  C08J2379/08 ,  H04W36/0022

Abstract: The present disclosure relates to a membrane for flue gas separation containing a crosslinked, thermally rearranged poly(benzoxazole-co-imide) copolymer prepared simply by heat-treating a membrane prepared from an o-hydroxypolyimide copolymer having carboxylic acid groups such that thermal crosslinking and thermal rearrangement occur simultaneously or a membrane for flue gas separation containing a crosslinked, thermally rearranged poly(benzoxazole-co-imide) copolymer having a benzoxazole group content of less than 80% in the polymer chain, prepared from transesterification crosslinking of an o-hydroxypolyimide copolymer having carboxylic acid groups and a diol-based compound followed by thermal rearrangement, and a method for preparing the same.In accordance with the present disclosure, a crosslinked, thermally rearranged poly(benzoxazole-co-imide) copolymer membrane for flue gas separation can be prepared simply through heat treatment without requiring a complicated process such as chemical crosslinking, UV irradiation, etc. for forming a crosslinked structure and a membrane for flue gas separation prepared therefrom exhibits superior permeability and selectivity. Also, the method is applicable to commercial-scale production because the preparation process is simple.

Abstract translation: 根据本公开，用于烟道气分离的交联的热重排的聚（苯并恶唑 - 共 - 酰亚胺）共聚物膜可以简单地通过热处理制备而不需要复杂的工艺，例如化学交联，UV照射等，用于形成 用于制备烟道气分离的交联结构和膜表现出优异的渗透性和选择性。 此外，该方法适用于商业规模生产，因为制备过程简单。