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    NONVOLATILE MEMORY DEVICE
    1.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权

    公开(公告)号：US20230126012A1

    公开(公告)日：2023-04-27

    申请号：US17866904

    申请日：2022-07-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bong-Kil JUNG ,  Sang-Wan NAM ,  Jong Min BAEK ,  Min Ki JEON ,  Woo Chul JUNG ,  Yoon-Hee CHOI

    IPC: G11C16/34 ,  G11C16/04 ,  G11C16/08 ,  G11C16/24

    Abstract: Provided is a nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a first voltage generator configured to generate a word line operating voltage for each word line of the memory cell array, a second voltage generator configured to generate a bit line operating voltage of the memory cell array, and a temperature unit configured to determine, from a temperature range table, a temperature range for a temperature code according to a real-time temperature of the memory cell array, and to adjust a power supply voltage of the first or second voltage generator based on a selection signal mapped to the determined temperature range.

    NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE
    2.
    发明公开
    NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE 审中-公开

    公开(公告)号：US20230221870A1

    公开(公告)日：2023-07-13

    申请号：US17962872

    申请日：2022-10-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Euihyun CHEON ,  Sang-Wan NAM

    IPC: G06F3/06

    CPC classification number: G06F3/0619 ,  G06F3/0679 ,  G06F3/0629

    Abstract: Disclosed is a nonvolatile memory device including a memory cell array including memory cells, bit lines and word lines connected with the memory cells, a common source line connected with the memory cells, a control logic circuit including a common source line noise control logic circuit and configured to generate voltages including a first voltage and a second voltage, a voltage selector configured to receive the voltages and configured to select at least one of the voltages, and a common source line driver configured to receive the at least one selected voltage and configured to control a voltage of the common source line, and the common source line noise control logic circuit is configured to control the voltage selector based on program information so as to select the at least one of the voltages.

    NON-VOLATILE MEMORY DEVICE
    3.
    发明申请
    NON-VOLATILE MEMORY DEVICE 有权

    公开(公告)号：US20210027841A1

    公开(公告)日：2021-01-28

    申请号：US16991821

    申请日：2020-08-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang-Won PARK ,  Sang-Wan NAM ,  Ji Yeon SHIN ,  Won Bo SHIM ,  Jung-Yun YUN ,  Ji Ho CHO ,  Sang Gi HONG

    IPC: G11C16/10 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  G11C16/04

    Abstract: A non-volatile memory device comprises a memory cell region including a first metal pad, a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad, a memory cell array in the memory cell region including a plurality of memory cells, each of the memory cells being connected to a plurality of word lines in the memory cell region and a plurality of bit lines in the memory cell region, and a control logic circuit in the peripheral circuit region configured to control voltages to be applied to the plurality of word lines and the plurality of bit lines.

    MEMORY SYSTEM AND PROGRAMMING METHOD THEREOF
    5.
    发明申请
    MEMORY SYSTEM AND PROGRAMMING METHOD THEREOF 审中-公开
    记忆系统及其编程方法

    公开(公告)号：US20160012898A1

    公开(公告)日：2016-01-14

    申请号：US14858120

    申请日：2015-09-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang-Won SHIM ,  Sang-Wan NAM ,  KITAE PARK

    IPC: G11C16/10 ,  G11C16/26 ,  G11C16/34 ,  G11C16/04

    CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3427 ,  G11C16/3459

    Abstract: A program method of a nonvolatile memory device is provided, which includes programming a memory cell in one string selected from a plurality of vertical strings; determining whether a mode of operation of the nonvolatile memory device is a pre-pulse mode; when the mode of operation is determined to be the pre-pulse mode, applying a pre-pulse having a predetermined level to a string selection line connected with a gate of a string selection transistor of at least one unselected vertical string of the plurality of vertical strings for a particular time period; and performing a verification operation on the programmed memory cell.

    Abstract translation: 提供了一种非易失性存储器件的编程方法，其包括以多个垂直字符串中选择的一个串中的存储器单元进行编程; 确定所述非易失存储器件的工作模式是否是预脉冲模式; 当操作模式被确定为预脉冲模式时，将具有预定电平的预脉冲施加到与多个垂直线中的至少一个未选择垂直弦的串选择晶体管的栅极连接的串选择线 特定时间段的字符串; 以及对所编程的存储单元执行验证操作。

    MEMORY DEVICE AND OPERATION METHOD THEREOF
    9.
    发明申请
    MEMORY DEVICE AND OPERATION METHOD THEREOF 有权

    公开(公告)号：US20230138601A1

    公开(公告)日：2023-05-04

    申请号：US17957532

    申请日：2022-09-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang-Wan NAM ,  Hyunggon KIM ,  Bong-Kil JUNG ,  Younho HONG ,  Juseong HWANG

    IPC: G11C16/08

    Abstract: Disclosed is a memory device includes a memory block that is connected with a plurality of wordlines, a voltage generating circuit configured to output a first non-selection voltage through a plurality of driving lines, and an address decoding circuit configured to connect the plurality of driving lines with unselected wordlines of the plurality of wordlines. During a wordline setup period for the plurality of wordlines, the voltage generating circuit floats first driving lines corresponding to first unselected wordlines of the unselected wordlines from among the plurality of driving lines when the first unselected wordlines reach a first target level, and floats second driving lines corresponding to second unselected wordlines of the unselected wordlines from among the plurality of driving lines when the second unselected wordlines reach a second target level different from the first target level.

    NON-VOLATILE MEMORY DEVICES AND PROGRAM METHODS THEREOF
    10.
    发明申请
    NON-VOLATILE MEMORY DEVICES AND PROGRAM METHODS THEREOF 有权

    公开(公告)号：US20210020256A1

    公开(公告)日：2021-01-21

    申请号：US16991443

    申请日：2020-08-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Wandong KIM ,  Jinwoo PARK ,  Seongjin KIM ,  Sang-Wan NAM

    IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/08 ,  G11C16/30 ,  G11C16/04 ,  G11C7/04 ,  G11C7/10

    Abstract: A program method of a non-volatile memory device, the non-volatile memory device including a peripheral circuit region and a memory cell region including a cell substrate and a cell string having memory cells stacked perpendicular to a surface of a cell substrate, the method includes performing a first program phase including programming a first memory cell connected to a first word line and applying a first pass voltage to other word lines above or below the first word line, and performing a second program phase including programming a second memory cell being connected to a second word line closer to the cell substrate, applying a second pass voltage to a first word line group below the second word line and applying a third pass voltage to a second word line group above the second word line, the second pass voltage being lower than the third pass voltage.

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