公开(公告)号：US20230117953A1

公开(公告)日：2023-04-20

申请号：US17877439

申请日：2022-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Youngdo Kim ,  Sanghun Kim ,  Sungyeol Kim ,  Sangki Nam ,  Taemin Earmme ,  Changyun Lee ,  Seongmoon Ha

IPC: H01J37/32

Abstract: A plasma generator may include a dielectric tube, an inner helical coil surrounding the dielectric tube and configured to generate plasma by forming a stationary wave of at least one of a magnetic field and an electromagnetic wave in the dielectric tube, a variable capacitor configuring a closed loop with the inner helical coil, an outer helical coil surrounding the inner helical coil and magnetically coupled to the inner helical coil, and a radio frequency (RF) power supply configured to provide RF power at a variable frequency to the inner helical coil.

公开(公告)号：US20230102201A1

公开(公告)日：2023-03-30

申请号：US17874475

申请日：2022-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Vladimir Vsevolodovich PROTOPOPOV ,  Vasily Grigorievich PASHKOVSKIY ,  Chansoo KANG ,  Youngdo KIM ,  Hoonseop KIM ,  Sangki NAM ,  Sejin OH ,  Changsoon LIM

IPC: H01J37/32

Abstract: A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.

公开(公告)号：US20230091161A1

公开(公告)日：2023-03-23

申请号：US17711181

申请日：2022-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Youngdo KIM ,  Sanghun KIM ,  Sungyeol KIM ,  Younghwan KIM ,  Taemin EARMME ,  Changyun LEE ,  Sunghun JANG

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

公开(公告)号：US20240159657A1

公开(公告)日：2024-05-16

申请号：US18202663

申请日：2023-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Sunggil KANG ,  Sangki NAM ,  Jeongmin BANG ,  Dougyong SUNG ,  Yeongkwang LEE ,  Sungho JANG ,  Jonghun PI

IPC: G01N21/25 ,  G01N21/31 ,  H01L21/67

CPC classification number: G01N21/255 ,  G01N21/3103 ,  H01L21/67069 ,  G01N2201/061 ,  G01N2201/062

Abstract: Provided is an apparatus configured to measure radical spatial density distribution including a process chamber including a viewport, a driving device configured to move a moving wall inside the process chamber, a light source configured to generate light, a collimator disposed in the viewport of the process chamber and configured to transmit light received from the light source to the moving wall and receive light reflected from the moving wall, and a spectrometer configured to receive the reflected light from the collimator, and measure radical spatial density based on analyzing an absorption amount of a spectrum of the received light.

公开(公告)号：US20160379802A1

公开(公告)日：2016-12-29

申请号：US15161432

申请日：2016-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Dougyong SUNG ,  Kiho HWANG ,  Yun-Kwang JEON

IPC: H01J37/32 ,  G01J1/04 ,  G01J1/42 ,  C23C16/50 ,  C23C16/52

CPC classification number: G01J1/0407 ,  C23C16/50 ,  C23C16/52 ,  G01J1/0295 ,  G01J1/0422 ,  G01J1/0492 ,  G01J1/10 ,  G01J1/22 ,  G01J1/26 ,  G01J1/429 ,  G01J2001/242 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/3299

Abstract: An apparatus for monitoring vacuum ultraviolet, the apparatus including a light controller including a slit, the slit to transmit plasma emission light emitted from a process chamber in which a plasma process is performed on a substrate; a light selector adjacent to the light controller, the light selector selectively to transmit light, having a predetermined wavelength band, of the plasma emission light passing through the slit; a light collector to concentrate the light selectively transmitted by the light selector; and a detector to detect the light concentrated by the light collector, the light selectively transmitted by the light selector being vacuum ultraviolet.

Abstract translation: 一种用于监测真空紫外线的装置，该装置包括具有狭缝的光控制器，该狭缝用于传输从其中在基板上执行等离子体处理的处理室发射的等离子体发射光; 与所述光控制器相邻的光选择器，所述光选择器选择性地透射通过所述狭缝的等离子体发射光的具有预定波长带的光; 集光器，用于集中由选择器选择性地传输的光; 以及检测器，用于检测由光收集器集中的光，由选择器选择性地透射的光是真空紫外线。

公开(公告)号：US20170140937A1

公开(公告)日：2017-05-18

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong SUNG ,  Sejin OH ,  Je-Hun WOO ,  Hyunju LEE ,  Seungkyu LIM ,  Kiho HWANG

IPC: H01L21/263 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

公开(公告)号：US20180114700A1

公开(公告)日：2018-04-26

申请号：US15490945

申请日：2017-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-Hun WOO ,  Dougyong SUNG ,  Sejin OH

IPC: H01L21/311 ,  H01L21/683

CPC classification number: H01L21/31116 ,  H01L21/3065 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of atomic layer etching and fabricating a semiconductor device using the same, the atomic layer etching including providing a layer including atomic layers each having first and second atoms, the second atoms being different from the first atoms; and sequentially removing each of the atomic layers, wherein removing each of the atomic layers includes: providing a first etching gas that reacts with the first atoms such that the first etching gas is adsorbed on the first atoms; purging the first etching gas not adsorbed on the first atoms; removing the first atoms on which the first etching gas is adsorbed; providing a second etching gas that reacts with the second atoms such that the second etching gas is adsorbed on the second atoms; purging the second etching gas not adsorbed on the second atoms; and removing the second atoms on which the second etching gas is adsorbed.

公开(公告)号：US20250014871A1

公开(公告)日：2025-01-09

申请号：US18406898

申请日：2024-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungwon CHO ,  Kyunghyun KIM ,  Ingi KIM ,  Sangki NAM ,  Dougyong SUNG ,  Sejin OH ,  Sungho JANG

IPC: H01J37/32 ,  H01L21/683

Abstract: According to an aspect of the present inventive concepts, a semiconductor processing apparatus includes: a chamber; an electrostatic chuck in an internal space of the chamber; a plurality of grid electrodes installed on the electrostatic chuck so as to be separated from each other in a first direction, perpendicular to an upper surface of the electrostatic chuck, and respectively having a plurality of through-holes; a plurality of reflectors between the plurality of grid electrodes and the electrostatic chuck and reflecting ions passing through the plurality of through-holes in each of the plurality of grid electrodes; and a voltage supply unit outputting a bias voltage having a predetermined cycle to at least one of the plurality of grid electrodes, wherein each of the plurality of grid electrodes includes a base plate containing a conductive material, and a cover layer covering a surface of the base plate and containing a metal oxide.

公开(公告)号：US20240234093A1

公开(公告)日：2024-07-11

申请号：US18235653

申请日：2023-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Dougyong Sung

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/334

Abstract: A substrate processing apparatus includes a chamber including an upper chamber defining a first plasma region for generating first plasma and a lower chamber defining a second plasma region for generating second plasma; a substrate support below the first and second plasma regions in the lower chamber, and configured to support a substrate; distribution plates between the first and second plasma regions in the upper chamber, and configured to inject ions included in the first plasma onto the substrate; a first plasma generating device on a side of the upper chamber and configured to generate the first plasma from a first process gas; a second plasma generating device on a side of the lower chamber and configured to generate the second plasma from a second process gas; and a controller that alternately operates the first plasma generating device and the second plasma generating device.