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公开(公告)号:US20220173008A1
公开(公告)日:2022-06-02
申请号:US17332471
申请日:2021-05-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunjae KIM , Eunsil KANG , Daehyun KIM , Sunkyoung SEO
IPC: H01L23/31 , H01L25/18 , H01L25/065 , H01L23/29 , H01L23/498 , H01L23/00
Abstract: A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.
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公开(公告)号:US20220157780A1
公开(公告)日:2022-05-19
申请号:US17375511
申请日:2021-07-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ohguk KWON , Namhoon KIM , Hyoeun KIM , Sunkyoung SEO
IPC: H01L25/065 , H01L23/538
Abstract: A semiconductor package including a substrate; a first semiconductor chip on the substrate; a second semiconductor chip on the first semiconductor chip; and at least one connection terminal between the first semiconductor chip and the second semiconductor chip, wherein the first semiconductor chip includes a first semiconductor chip body; and at least one upper pad on a top surface of the first semiconductor chip body and in contact with the at least one connection terminal, the at least one upper pad includes a recess that is downwardly recessed from a top surface thereof, and a depth of the recess is less than a thickness of the at least one upper pad.
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公开(公告)号:US20240404955A1
公开(公告)日:2024-12-05
申请号:US18800320
申请日:2024-08-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunkyoung SEO , Taehwan Kim , Hyunjung Song , Hyoeun Kim , Wonil Lee , Sanguk Han
IPC: H01L23/538 , H01L23/00 , H01L23/367
Abstract: A semiconductor package includes a redistribution structure, a lower semiconductor device arranged on the redistribution structure and including first through electrodes each having a first horizontal width, a connecting substrate arranged on the redistribution structure and spaced apart from the lower semiconductor device in a horizontal direction and including second through electrodes each having a second horizontal width greater than the first horizontal width, a first molding layer arranged on the redistribution structure and surrounding a side surface of the lower semiconductor device and a side surface of the connecting substrate, and an upper semiconductor device arranged on the lower semiconductor device and the connecting substrate, the upper semiconductor device electrically connected to the first and second through electrodes. A plane area of the upper semiconductor device is greater than a plane area of the lower semiconductor device, and the first horizontal width is about 1 μm to about 7 μm and the second horizontal width is about 10 μm to about 20 μm.
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公开(公告)号:US20240222217A1
公开(公告)日:2024-07-04
申请号:US18593381
申请日:2024-03-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunjae KIM , Eunsil KANG , Daehyun KIM , Sunkyoung SEO
IPC: H01L23/31 , H01L23/00 , H01L23/29 , H01L23/498 , H01L25/065 , H01L25/18 , H01L21/56
CPC classification number: H01L23/3192 , H01L23/295 , H01L23/3128 , H01L23/3185 , H01L23/49827 , H01L24/16 , H01L24/17 , H01L24/73 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/18 , H01L21/561 , H01L24/02 , H01L24/05 , H01L24/13 , H01L2224/02331 , H01L2224/02372 , H01L2224/02381 , H01L2224/0557 , H01L2224/06519 , H01L2224/13024 , H01L2224/16145 , H01L2224/16146 , H01L2224/16235 , H01L2224/17181 , H01L2224/17519 , H01L2224/2929 , H01L2224/29386 , H01L2224/29499 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2225/06568 , H01L2225/06589 , H01L2924/181 , H01L2924/1815 , H01L2924/18161
Abstract: A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.
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公开(公告)号:US20220130802A1
公开(公告)日:2022-04-28
申请号:US17571796
申请日:2022-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonho JUN , Un-Byoung KANG , Sunkyoung SEO , Jongho LEE , Young Kun JEE
IPC: H01L25/065 , H01L23/00
Abstract: A semiconductor package may include first and second substrates, which are vertically stacked, a semiconductor device layer on a bottom surface of the second substrate to face a top surface of the first substrate, upper chip pads and an upper dummy pad on the top surface of the first substrate, penetration electrodes, which each penetrate the first substrate and are connected to separate, respective upper chip pads, lower chip pads on a bottom surface of the semiconductor device layer and electrically connected to separate, respective upper chip pads, and a lower dummy pad on the bottom surface of the semiconductor device layer and electrically isolated from the upper dummy pad. A distance between the upper and lower dummy pads in a horizontal direction that is parallel to the first substrate may be smaller than a diameter of the lower dummy pad.
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公开(公告)号:US20240290669A1
公开(公告)日:2024-08-29
申请号:US18385082
申请日:2023-10-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunkyoung SEO , Dohyun KIM , Yeongseon KIM , Juhyeon KIM , Hyoeun KIM , Jeongoh HA
IPC: H01L21/66 , H01L23/00 , H01L25/065 , H10B80/00
CPC classification number: H01L22/32 , H01L24/08 , H01L25/0657 , H10B80/00 , H01L2224/08145 , H01L2225/06541 , H01L2225/06582 , H01L2225/06596 , H01L2924/1436
Abstract: A semiconductor structure according to an embodiment may include: an interconnect structure on a substrate; an interlayer dielectric layer on the interconnect structure; a first conductive pad within the interlayer dielectric layer and electrically coupled with the interconnect structure; a second conductive pad within the interlayer dielectric layer and electrically decoupled from the interconnect structure; a first via plug within the interlayer dielectric layer; and a bonding structure on the interlayer dielectric layer and including a first bonding pad, a plurality of second bonding pads, and a bonding dielectric layer, wherein the first bonding pad is electrically coupled to the first via plug, some of the plurality of second bonding pads are spaced apart from the first conductive pad in a vertical direction, and others of the plurality of second bonding pads are spaced apart from the second conductive pad in the vertical direction.
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公开(公告)号:US20230170304A1
公开(公告)日:2023-06-01
申请号:US18095900
申请日:2023-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunkyoung SEO , Taehwan KIM , Hyunjung SONG , Hyoeun KIm , Wonil LEE , Sanguk HAN
IPC: H01L23/538 , H01L23/00 , H01L23/367
CPC classification number: H01L23/5384 , H01L24/14 , H01L23/367 , H01L23/5385 , H01L23/5386
Abstract: A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.
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公开(公告)号:US20220093543A1
公开(公告)日:2022-03-24
申请号:US17376616
申请日:2021-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunkyoung SEO , Teak Hoon LEE , Chajea JO
IPC: H01L23/00 , H01L25/065 , H01L25/10
Abstract: A semiconductor package includes a sequential stack of first and second semiconductor chips, and a first internal connection member that connects the first and second semiconductor chips to each other. The first semiconductor chip includes a first substrate that has a first top surface and a first bottom surface that are opposite to each other, and a first conductive pad on the first top surface. The second semiconductor chip includes a second substrate that has a second top surface and a second bottom surface that are opposite to each other, and a second conductive bump on the second bottom surface. The first internal connection member connects the first conductive pad to the second conductive bump. The first conductive pad has a first width in one direction. The second conductive bump has a second width in the one direction. The first width is smaller than the second width.
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公开(公告)号:US20210193581A1
公开(公告)日:2021-06-24
申请号:US17003639
申请日:2020-08-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunkyoung SEO , Taehwan KIM , Hyunjung SONG , Hyoeun KIM , Wonil LEE , Sanguk HAN
IPC: H01L23/538 , H01L23/00 , H01L23/367
Abstract: A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.
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公开(公告)号:US20240088075A1
公开(公告)日:2024-03-14
申请号:US18508807
申请日:2023-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunkyoung SEO , Teak Hoon LEE , Chajea JO
IPC: H01L23/00 , H01L25/065 , H01L25/10
CPC classification number: H01L24/05 , H01L24/16 , H01L24/81 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L2224/05008 , H01L2224/05084 , H01L2224/05111 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/16013 , H01L2224/81203 , H01L2225/06513 , H01L2225/06541 , H01L2225/06586 , H01L2225/06589 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/18161
Abstract: A semiconductor package includes a sequential stack of first and second semiconductor chips, and a first internal connection member that connects the first and second semiconductor chips to each other. The first semiconductor chip includes a first substrate that has a first top surface and a first bottom surface that are opposite to each other, and a first conductive pad on the first top surface. The second semiconductor chip includes a second substrate that has a second top surface and a second bottom surface that are opposite to each other, and a second conductive bump on the second bottom surface. The first internal connection member connects the first conductive pad to the second conductive bump. The first conductive pad has a first width in one direction. The second conductive bump has a second width in the one direction. The first width is smaller than the second width.
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