Abstract:
A computer-implemented method for a simulation of a printed circuit board includes dividing a layout of the printed circuit board into elements having the same size, detecting first elements that have at least two materials from the elements, calculating anisotropic attributes of the first elements and assigning the anisotropic attributes to each of the first elements, and calculating a warpage of the printed circuit board based on the anisotropic attributes of the first elements. The anisotropic attributes depend on physical properties according to directions of the first elements on the layout.
Abstract:
Embodiments of a wiring substrate is provided. Embodiments include a first redistribution layer, a first core layer disposed on the first redistribution layer, a second core layer disposed on the first core layer, a first adhesion layer disposed between the first core layer and the second core layer, and a second redistribution layer disposed on the second core layer. In some cases, the first core layer includes a first core section and a first core pad disposed on a top surface of the first core section, wherein the second core layer includes a second core section and a second core pad disposed on a bottom surface of the second core section. The first core layer and the second core layer are electrically connected to each other through the first core pad and the second core pad.
Abstract:
A semiconductor device including: a first memory section, a first peripheral circuit section, and a second peripheral circuit section that are disposed next to each other on a substrate; and a second memory section laterally spaced apart from the first memory section, the second peripheral circuit section and the second memory section disposed next to each other on the substrate, wherein the first memory section includes a plurality of first memory cells, each of the first memory cells including a cell transistor and a capacitor connected to the cell transistor, and the second memory section includes a plurality of second memory cells, each of the second memory cells including a variable resistance element and a select element coupled in series to each other, wherein the second memory cells are higher from the substrate than each of the capacitors.
Abstract:
A semiconductor package includes a package substrate, a first device on the package substrate and a second device on the package substrate and horizontally spaced apart from the first device, where the package substrate includes a first redistribution layer, a second redistribution layer on the first redistribution layer, a core section between the first redistribution layer and the second redistribution layer, a dummy structure in the first redistribution layer and on a bottom surface of the core section and a bridge chip in the second redistribution layer and on a top surface of the core section, and where a thermal conductance of the dummy structure is greater than a thermal conductance of the first redistribution layer.
Abstract:
A nonvolatile memory device includes a memory cell array, a word line drive block that is connected to a first group of memory cells through a first group of word lines and to a second group of memory cells through a second group of word lines, a bit line bias and sense block that is connected to the first and second groups of memory cells through bit lines, a variable current supply block that generates a word line current to be supplied to a selected word line, and a control logic block that receives an address and a command and controls the variable current supply block to adjust an amount of the word line current based on the address. The control logic block further varies the amount of the word line current depending on a distance between the selected word line and the substrate.
Abstract:
A semiconductor package is provided. The semiconductor includes a lower package and an upper package stacked on the lower package. The lower package includes a package substrate, a semiconductor chip, a mold layer and a residential stress layer. The package substrate has upper and lower surfaces. The semiconductor chip is disposed on the upper surface of the package substrate. The mold layer encapsulates the semiconductor chip. The residual stress layer is disposed on the semiconductor chip. The residual stress layer includes a plastically deformed surface. The residual stress layer has a residual stress to counterbalance warpage of the lower package.
Abstract:
A semiconductor package includes a package substrate. A first device is on the package substrate. A second device is on the package substrate and is horizontally spaced apart from the first device. The package substrate includes a core portion. A bridge chip is on a top surface of the core portion. The bridge chip has first pads. An upper buildup portion covers the top surface of the core portion and surrounds the bridge chip. The upper buildup portion has second pads. First solders couple the first device to the first pads and second solders couple the first device to the second pads. A first height of the first solders is less than a second height of the second solders. A first interval between adjacent first solders of the first solders is less than a second interval between adjacent second solders of the second solders.
Abstract:
A semiconductor package includes: a lead frame that includes a first surface and a second surface opposite to the first surface, where the lead frame includes a first lead that extends in a first direction, and a plurality of second leads that are spaced apart from the first lead on both sides of the first lead; at least one semiconductor chip mounted on the first surface of the lead frame by a plurality of bumps; and an encapsulant that encapsulates the lead frame and the at least one semiconductor chip, wherein the first lead has a groove in the first surface that partitions the plurality of bumps in contact with the first lead.
Abstract:
A semiconductor package device may include a first package substrate, a first semiconductor chip on the first package substrate, an interposer on the first semiconductor chip, a warpage prevention member on the interposer, a molding member on the interposer and the first package substrate, and a second package substrate on the molding member. At least a portion of a top surface of the molding member may be spaced apart from a bottom surface of the second package substrate.
Abstract:
A semiconductor device includes a semiconductor substrate including a circuit layer disposed therein, a bonding pad disposed on the semiconductor substrate, the bonding pad being electrically connected to the circuit layer, and a metal layer electrically connected to the bonding pad. The metal layer includes a first via electrically connected to the bonding pad, the first via providing an electrical path between the metal layer and the circuit layer, and a second via protruding toward the semiconductor substrate, the second via supporting the metal layer on the semiconductor substrate.