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公开(公告)号：US20170365638A9
公开(公告)日：2017-12-21
申请号：US15409306
申请日：2017-01-18
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Kyu Kim , So Ra Lee , Yeo Jin Yoon , Jae Kwon Kim , Joon Sup Lee , Min Woo Kang , Se Hee Oh , Hyun A Kim , Hyoung Jin Lim
CPC classification number: H01L27/156 , H01L33/08 , H01L33/36 , H01L33/38 , H01L33/58 , H01L33/60 , H01L33/62 , H01L33/64 , H01L2224/16225 , H01L2224/32245 , H01L2924/181 , H01L2924/19107 , H01L2933/0016 , H01L2924/00012
Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
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公开(公告)号：US11282892B2
公开(公告)日：2022-03-22
申请号：US16594239
申请日：2019-10-07
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Kyu Kim , So Ra Lee , Yeo Jin Yoon , Jae Kwon Kim , Joon Sup Lee , Min Woo Kang , Se Hee Oh , Hyun A. Kim , Hyoung Jin Lim
Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
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公开(公告)号：US10998479B2
公开(公告)日：2021-05-04
申请号：US16158305
申请日：2018-10-12
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee Oh , Hyun A Kim , Jong Kyu Kim , Hyoung Jin Lim
IPC: H01L33/62 , H01L33/10 , H01L25/075 , H01L33/32 , H01L33/50 , F21S41/141 , H01L33/44 , H01L27/15 , H01L33/38 , H01L33/40 , H01L33/64 , H01L33/46 , H01L33/08 , H01L33/22
Abstract: A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.
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公开(公告)号：US10985304B2
公开(公告)日：2021-04-20
申请号：US16464679
申请日：2017-10-11
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee Oh , Hyun A Kim , Joon Sup Lee , Min Woo Kang , Hyoung Jin Lim
IPC: H01L33/64 , H01L27/15 , H01L33/10 , H01L33/20 , H01L33/40 , H01L33/62 , H01L33/36 , H01L33/02 , H01L33/60
Abstract: A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.
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公开(公告)号：US20230299240A1
公开(公告)日：2023-09-21
申请号：US18153205
申请日：2023-01-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Kyu KIM , Min Woo Kang , Se Hee Oh , Hyoung Jin Lim
CPC classification number: H01L33/382 , H01L33/20 , H01L33/405 , H01L33/44 , H01L33/32
Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.
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Patent Agency Ranking
公开(公告)号：US09761762B2
公开(公告)日：2017-09-12
申请号：US15264420
申请日：2016-09-13
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyoung Jin Lim , Chan Seob Shin , Kyu Ho Lee , Tae Gyun Kim , Sung Won Tae
CPC classification number: H01L33/38 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0091
Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
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公开(公告)号：US20160087158A1
公开(公告)日：2016-03-24
申请号：US14949554
申请日：2015-11-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyoung Jin Lim , Chan Seob Shin , Kyu Ho Lee , Tae Gyun Kim , Sung Won Tae
CPC classification number: H01L33/38 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0091
Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
Abstract translation: 本文公开了包括多个包括氧化锌的突起的发光二极管及其制造方法。 根据本公开的示例性实施例，发光二极管包括：基板; 设置在所述基板上的氮化物发光结构; 以及设置在所述氮化物发光结构上的透明电极层，其中所述透明电极层包括多个突起，所述多个突起各自具有下部和上部，所述下部的一侧和 上部具有不同的梯度。
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公开(公告)号：US10998469B2
公开(公告)日：2021-05-04
申请号：US16885536
申请日：2020-05-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Kyu Kim , Min Woo Kang , Se Hee Oh , Hyoung Jin Lim
Abstract: A chip-scale package type light emitting diode includes: a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer, in which the openings of the dielectric layer include a narrow and elongated bar-shaped opening adjacent to at least one of the first openings of the lower insulation layer.
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公开(公告)号：US10438992B2
公开(公告)日：2019-10-08
申请号：US15409306
申请日：2017-01-18
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Kyu Kim , So Ra Lee , Yeo Jin Yoon , Jae Kwon Kim , Joon Sup Lee , Min Woo Kang , Se Hee Oh , Hyun A Kim , Hyoung Jin Lim
IPC: H01L21/00 , H01L27/15 , H01L33/08 , H01L33/38 , H01L33/58 , H01L33/60 , H01L33/64 , H01L33/36 , H01L33/62
Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
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公开(公告)号：US20180138382A1
公开(公告)日：2018-05-17
申请号：US15868976
申请日：2018-01-11
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon Chae , Yeon Cheol Cho , Cun Bok Jeong , Hyoung Jin Lim
CPC classification number: H01L33/62 , H01L33/36 , H01L33/382 , H01L33/387 , H01L2224/16225 , H01L2933/0016 , H01L2933/0066
Abstract: A method for manufacturing a light emitting diode package comprises: arranging a first solder and a second solder between a substrate and a light emitting diode; and subjecting the first solder and the second solder to heat treatment to bond the substrate and the light emitting diode. The heat treatment comprises: increasing the temperature of the first and second solders from room temperature to a temperature Tp; maintaining the temperature Tp; and lowering the temperature Tp. The heating step comprises: a first ramping step of increasing a temperature from room temperature to a temperature TA at a constant speed; a pre-heating step of increasing the temperature from the temperature TA to a temperature TB to impart fluidity to the first and second solders; and a second ramping step of increasing the temperature from the TB to TL at a constant speed.
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