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1.发明授权公开(公告)号：US06686283B1
公开(公告)日：2004-02-03
申请号：US09498083
申请日：2000-02-04
申请人： Shawn T. Walsh , John E. Campbell , Somit Joshi , James B. Friedmann , Michael J. McGranaghan , Janice D. Makos , Arun Sivasothy , Troy A. Yocum , Jaideep Mavoori , Wayne A. Bather , Joe G. Tran , Ju-Ai Ruan , Michelle L. Hartsell , Gregory B. Shinn
发明人： Shawn T. Walsh , John E. Campbell , Somit Joshi , James B. Friedmann , Michael J. McGranaghan , Janice D. Makos , Arun Sivasothy , Troy A. Yocum , Jaideep Mavoori , Wayne A. Bather , Joe G. Tran , Ju-Ai Ruan , Michelle L. Hartsell , Gregory B. Shinn
IPC分类号： H01L2176
CPC分类号： H01L21/76229 , H01L21/31056
摘要： A method for forming planar isolation structures for integrated circuits. A etch barrier is formed over the isolation fill material and an etch back is performed to remove material above unetched portions of the substrate. The exposed fill material is etched and planarized to form a planar isolation structure.
摘要翻译： 一种用于形成用于集成电路的平面隔离结构的方法。 在隔离填充材料上形成蚀刻阻挡层，并且执行回蚀以去除衬底的未蚀刻部分上方的材料。 将暴露的填充材料蚀刻并平坦化以形成平面隔离结构。
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公开(公告)号：US5506422A
公开(公告)日：1996-04-09
申请号：US348485
申请日：1994-12-02
IPC分类号： C30B29/04 , H01L21/04 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/1079 , H01L29/66045 , H01L29/78 , Y10T428/30
摘要： A junction suitable for incorporation in diamond electronic devices, such as field effect transistors, U-V photodetectors, capacitors, charge-coupled devices, etc., comprising a double layer structure deposited on the semiconducting diamond film of the electronic device, wherein the double layer structure consists of a layer of intrinsic diamond and a layer of a carrier blocking material. The carrier blocking materials is characterized by a band structure discontinuous with that of diamond resulting in the formation of a depletion layer at the interface. A contact is then formed on this double layer structure.
摘要翻译： 包括沉积在电子器件的半导体金刚石膜上的双层结构的金刚石电子器件中诸如场效应晶体管，紫外光电检测器，电容器，电荷耦合器件等的接合点，其中双层结构 由一层本征金刚石和一层载体阻挡材料组成。 载体阻挡材料的特征在于与金刚石不同的带结构，其特征在于在界面处形成耗尽层。 然后在该双层结构上形成接触。
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公开(公告)号：US5672240A
公开(公告)日：1997-09-30
申请号：US658467
申请日：1996-06-05
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。
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公开(公告)号：US5652436A
公开(公告)日：1997-07-29
申请号：US514656
申请日：1995-08-14
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
IPC分类号： H01L21/20 , H03H3/08 , H03H9/02 , H01L31/0312
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。
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公开(公告)号：US5453628A
公开(公告)日：1995-09-26
申请号：US322064
申请日：1994-10-12
CPC分类号： G01L9/0073
摘要： A capacitive transducer includes a first electrically conductive layer, and a diamond diaphragm mounted opposite the first electrically conductive Layer so as to be moveable relative to the first electrically conductive layer. The first electrically conductive layer defines a first plate for the transducer, while the diaphragm defines the second plate for the transducer. In one embodiment of the transducer, the diamond layer is degeneratively doped providing the second plate. The microelectronic capacitive transducer preferably also includes an insulating layer on a face of the diamond layer adjacent the electrically conductive layer defining an overpressure stop for the transducer. The transducer includes absolute or differential pressure sensing embodiments. The microelectronic capacitive transducer may also be configured as an actuator. The diamond layer may be highly oriented diamond including semiconductor devices formed therein to provide signal conditioning. A fabrication method is also disclosed.
摘要翻译： 电容换能器包括第一导电层和与第一导电层相对安装的金刚石膜片，以便相对于第一导电层可移动。 第一导电层限定用于换能器的第一板，而隔膜限定用于换能器的第二板。 在换能器的一个实施例中，金刚石层退化掺杂，提供第二板。 微电子电容换能器优选地还包括在邻近导电层的金刚石层的面上的绝缘层，其限定用于换能器的超压停止。 换能器包括绝对或差压感测实施例。 微电子电容换能器也可以被配置为致动器。 金刚石层可以是包括其中形成的半导体器件的高取向金刚石以提供信号调节。 还公开了一种制造方法。
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公开(公告)号：US5576589A
公开(公告)日：1996-11-19
申请号：US322710
申请日：1994-10-13
IPC分类号： G01N29/00 , H01L41/09 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/17 , H03H9/25 , H03H9/42 , H03H9/72 , H03H9/145 , H01L41/18
CPC分类号： H03H9/02582 , H03H9/0285
摘要： A high frequency Surface Acoustic Wave (SAW) device includes a highly oriented diamond layer adjacent a piezoelectric layer. In one embodiment, laterally spaced apart piezoelectric layers or portions confine propagation of the wave within the diamond layer. Interdigitated electrodes may be provided by electrically conductive metal lines and/or by heavily doped surface portions of the diamond layer. Undesirable reflections may be reduced by providing the piezoelectric layer with opposing ends canted at an angle from orthogonal to the axis of surface acoustic wave propagation. The surface acoustic wave device may be used as a filter, amplifier, convolver, and phase shifter. Methods for making the surface acoustic wave device are also disclosed.
摘要翻译： 高频表面声波（SAW）器件包括邻近压电层的高取向金刚石层。 在一个实施例中，横向间隔开的压电层或部分限制波在金刚石层内的传播。 交叉电极可以由导电金属线和/或通过金刚石层的重掺杂表面部分提供。 可以通过提供具有与正交于表面声波传播的轴线成正角的相对端部的压电层来降低不期望的反射。 声表面波器件可以用作滤波器，放大器，卷积器和移相器。 还公开了制造声表面波装置的方法。
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公开(公告)号：US5455432A
公开(公告)日：1995-10-03
申请号：US321164
申请日：1994-10-11
CPC分类号： H01L29/1602 , H01L29/1054 , H01L29/765 , H01L29/802 , H01L2924/0002
摘要： A diamond semiconductor device with a carbide interlayer includes a diamond layer having a semiconducting diamond region of first conductivity type therein and an insulated gate structure on a face of the diamond layer. The relatively thin carbide interfacial layer is provided between the insulated gate structure and the diamond layer in order to inhibit the formation of electrically active defects, such as interface states at the face. By inhibiting the formation of interface states at the face, the carbide interfacial layer suppresses parasitic leakage of charge carriers from the diamond layer to the insulated gate structure. The carbide interfacial layer can be intrinsic silicon carbide or an intrinsic refractory metal carbide (e.g., TiC or WC) or the layer can be of opposite conductivity type to thereby form a P--N heterojunction with the diamond layer. The carbide interfacial layer and the insulated gate structure can be used in a variety of diamond electronic devices such as MIS capacitors, enhancement-mode and buried-channel insulated-gate field effect transistors (IGFETs), surface-channel and buried-channel charge-coupled devices (CCDs), detectors, heterojunction devices, and other related field effect devices. Related fabrication methods are also disclosed.
摘要翻译： 具有碳化物中间层的金刚石半导体器件包括其中具有第一导电类型的半导体金刚石区域的金刚石层和在金刚石层的表面上的绝缘栅极结构。 在绝缘栅极结构和金刚石层之间提供相对薄的碳化物界面层，以便抑制电活性缺陷（例如在表面处的界面态）的形成。 通过抑制表面界面态的形成，碳化物界面层抑制电荷载体从金刚石层到绝缘栅极结构的寄生泄漏。 碳化物界面层可以是本征碳化硅或本征难熔金属碳化物（例如TiC或WC），或者该层可以具有相反的导电类型，从而与金刚石层形成P-N异质结。 碳化物界面层和绝缘栅结构可用于各种金刚石电子器件，如MIS电容器，增强型和埋沟通道绝缘栅场效应晶体管（IGFET），表面沟道和掩埋沟道电荷 - 耦合器件（CCD），检测器，异质结器件和其他相关的场效应器件。 还公开了相关的制造方法。
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